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IRF620 参数 Datasheet PDF下载

IRF620图片预览
型号: IRF620
PDF下载: 下载PDF文件 查看货源
内容描述: 5.0A , 200V , 0.800 Ohm的N通道功率MOSFET [5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 58 K
品牌: INTERSIL [ INTERSIL CORPORATION ]
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IRF620
Typical Performance Curves
100
OPERATION IN THIS AREA IS LIMITED BY r
DS(ON)
I
D
, DRAIN CURRENT (A)
8
Unless Otherwise Specified
(Continued)
10
10V
7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
6V
6
I
D
, DRAIN CURRENT (A)
10
10µs
100µs
1ms
4
5V
2
4V
0
1
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
1
10ms
100ms
DC
1000
0.1
100
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
20
40
60
80
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
5
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
4
V
GS
= 8V
I
D
, DRAIN CURRENT (A)
V
GS
= 6V
V
GS
= 5V
3
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
> I
D(ON)
x r
DS(ON) MAX
6
2
4
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
1
V
GS
= 4V
2
0
0
2
4
6
8
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0
2
4
6
8
10
V
G
, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
1.5
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
2.2
V
GS
= 10V
1.0
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 2A
1.4
0.5
V
GS
= 20V
1
0.6
0
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
0.2
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
NOTE: Heating effect of 2.0µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-199