IRLML6302PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-20
-0.70
0.56
Typ.
-4.9
2.4
0.56
1.0
13
18
22
22
97
53
28
Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
mV/°C Reference to 25°C, I
D
= -1mA
0.60
V
GS
= -4.5V, I
D
= -0.61A
Ω
0.90
V
GS
= -2.7V, I
D
= -0.31A
-1.5
V
V
DS
= V
GS
, I
D
= -250µA
S
V
DS
= -10V, I
D
= -0.31A
-1.0
V
DS
= -16V, V
GS
= 0V
µA
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
-100
V
GS
= -12V
nA
100
V
GS
= 12V
3.6
I
D
= -0.61A
0.84
nC V
DS
= -16V
1.5
V
GS
= -4.5V, See Fig. 6 and 9
V
DD
= -10V
I
D
= -0.61A
ns
R
G
= 6.2Ω
R
D
= 16Ω, See Fig. 10
V
GS
= 0V
pF
V
DS
= -15V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
-0.54
–––
35
26
-4.9
-1.2
53
39
V
ns
nC
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -0.61A, V
GS
= 0V
T
J
= 25°C, I
F
= -0.61A
di/dt = -100A/µs
D
G
S
Repetitive rating; pulse width
T
J
≤
150°C
I
SD
≤
-0.61A, di/dt
≤
76A/µs, V
DD
≤V
(BR)DSS
,
limited by max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board, t
≤
5sec.
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