欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRLML6302TRPBF 参数 Datasheet PDF下载

IRLML6302TRPBF图片预览
型号: IRLML6302TRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET®功率MOSFET [HEXFET® Power MOSFET]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 8 页 / 285 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
 浏览型号IRLML6302TRPBF的Datasheet PDF文件第1页浏览型号IRLML6302TRPBF的Datasheet PDF文件第2页浏览型号IRLML6302TRPBF的Datasheet PDF文件第4页浏览型号IRLML6302TRPBF的Datasheet PDF文件第5页浏览型号IRLML6302TRPBF的Datasheet PDF文件第6页浏览型号IRLML6302TRPBF的Datasheet PDF文件第7页浏览型号IRLML6302TRPBF的Datasheet PDF文件第8页  
IRLML6302PbF
10
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
1
1
0.1
0.1
-1.5V
20µs PULSE WIDTH
T
J
= 150°C
0.1
1
10
0.01
0.1
-1.5V
1
20µs PULSE WIDTH
T
J
= 25°C
A
10
0.01
A
-VDS , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
2.0
-I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -0.61A
1.5
1
1.0
0.1
0.5
0.01
1.5
2.0
2.5
3.0
V
DS
= -10V
20µs PULSE WIDTH
3.5
4.0
4.5
A
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= -4.5V
100 120 140 160
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3