MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
Gate non-trigger voltage
Thermal resistance
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V3 V4
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=25A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
15
15
15
—
2.5
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
Case temperature is measured at the T
2
terminal 1.5mm away from the molded case.
V4.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
200
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
T
j
= 125°C
T
j
= 25°C
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
