MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
100 (%)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
100 (%)
160
140
TYPICAL EXAMPLE
T
j
= 125°C
I QUADRANT
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
120
100
80
60
40
20
I
FGT I
I
RGT I
TYPICAL EXAMPLE
T
j
= 25°C
III QUADRANT
#2
I
RGT III
#1
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
TEST PROCEDURE
3
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
