MITSUBISHI SEMICONDUCTOR TRIAC
BCR16UM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
3
2
TYPICAL EXAMPLE
7
5
4
V
GM = 10V
P
G(AV) = 0.5W
P
GM = 5W
GM = 2A
101
7
5
3
2
3
I
2
V
GT = 1.5V
102
7
5
4
100
7
5
3
2
3
I
FGT I , IRGT I , IRGT III
2
10–1
7
V
GD = 0.2V
5
101
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
102 2 3 5 7 103
3.2
103
TYPICAL EXAMPLE
7
5
4
2.8
2.4
2.0
1.6
1.2
0.8
0.4
3
2
102
7
5
4
3
2
101
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
40
160
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
35
30
25
20
15
10
5
140
120
100
80
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
60
360°
40
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
20
0
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI [ Mitsubishi Group ]
