MITSUBISHI IGBT MODULES
CM10AD00-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
MAXIMUM RATINGS
(Tj = 25°C)
INVERTER PART
Symbol
Parameter
G-E Short
C-E Short
T
C
= 25°C
PULSE
T
C
= 25°C
PULSE
T
C
= 25°C
Conditions
Collector-emitter voltage
V
CES
V
GES
Gate-emitter voltage
I
C
Collector Current
I
CM
I
E (Note.1)
Emitter Current
I
EM (Note.1)
P
C (Note.3)
Maximum collector dissipation
Rating
1200
±20
10
20
10
20
62
Unit
V
V
A
A
A
A
W
(Note. 2)
(Note. 2)
BRAKE PART
Symbol
V
CES
V
GES
I
C
I
CM
P
C (Note.3)
V
RRM
I
FM (Note.3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
T
C
= 25°C
PULSE
T
C
= 25°C
Clamp diode part
Clamp diode part
Conditions
Rating
1200
±20
10
20
59
1200
10
Unit
V
V
A
A
W
V
A
(Note. 2)
CONVERTER PART
Symbol
V
RRM
E
a
I
O
I
FSM
I
2
t
Parameter
Conditions
Rating
1600
440
10
100
42
Unit
V
V
A
A
A
2
s
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
3φ rectifying circuit
Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive
I
2
t for fusing
Value for one cycle of surge current
THYRISTOR PART
Symbol
V
DRM
V
RRM
I
T(AV)
I
TSM
P
GM
P
G(AV)
I
FGM
V
FGM
V
RGM
di/dt
Parameter
Conditions
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Single-phase, half-wave 180° conduction
Surge (non-repetitive)
on-state current
1/2 cycle at 60Hz, peak value Non-repetitive
Rating
1600
1600
10
100
10
1
3
10
5
100
Unit
V
V
A
A
W
W
A
V
V
A/µs
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate forward voltage
Peak gate reverse voltage
Critical rate of rise of on-state Current I
G
=100mA, V
D
=800V, dI
G
/dt=1A/µs
COMMON RATING
Symbol
T
j
T
j
T
stg
V
iso
—
—
Parameter
Junction temperature
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Inverter, brake, converter part
Thyristor part
AC 1 min.
Mounting M4 screw
Typical value
Rating
–40 ~ +150
–40 ~ +125
–40 ~ +125
2500
1.47 ~ 1.96
120
Unit
°C
°C
°C
V
N·m
g
Sep. 2000
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
