MITSUBISHI IGBT MODULES
CM10AD00-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj = 25°C)
INVERTER PART
Symbol
I
CES
V
GE(th)
I
GES
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate-emitter cutoff current
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 1.0mA, V
CE
= 10V
Min.
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.7
2.45
—
—
—
50
—
—
—
—
—
—
0.08
—
—
Max.
1
7.5
0.5
3.4
—
2.0
1.5
0.4
—
100
200
150
350
3.5
250
—
2.0
3.1
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
°C/W
°C/W
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
Collector-emitter saturation voltage
I
C
= 10A, V
GE
= 15V
V
CE(sat)
T
j
= 150°C
Input capacitance
C
ies
V
CE
= 10V
Output capacitance
C
oes
V
GE
= 0V
C
res
Reverse transfer capacitance
Q
G
V
CC
= 600V, I
C
= 10A, V
GE
= 15V
Total gate charge
t
d(on)
Turn-on delay time
V
CC
= 600V, I
C
= 10A
t
r
Turn-on rise time
V
GE1
= V
GE2
= 15V
t
d(off)
R
G
= 31Ω
Turn-off delay time
t
f
Turn-off fall time
Resistive load
V
EC(Note.1)
Emitter-collector voltage
I
E
= 10A, V
GE
= 0V
t
rr (Note.1)
Reverse recovery time
I
E
= 10A, V
GE
= 0V
Q
rr (Note.1)
Reverse recovery charge
di
E
/ dt = – 20A /
µs
R
th(j-c)Q
IGBT part, Per 1/6 module
Thermal resistance
R
th(j-c)R
FWDi part, Per 1/6 module
(Note.4)
BRAKE PART
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
V
FM
R
th(j-c)Q
R
th(j-c)R
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate-emitter cutoff current
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 1.0mA, V
CE
= 10V
Min.
—
4.5
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
2.7
2.45
—
—
—
50
—
—
—
Max.
1
7.5
0.5
3.4
—
2.0
1.5
0.4
—
3.5
2.1
3.2
Unit
mA
V
µA
V
nF
nF
nF
nC
V
°C/W
°C/W
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25°C
I
C
= 10A, V
GE
= 15V
Collector-emitter saturation voltage
T
j
= 150°C
Input capacitance
V
CE
= 10V
Output capacitance
V
GE
= 0V
Reverse transfer capacitance
V
CC
= 600V, I
C
= 10A, V
GE
= 15V
Total gate charge
I
F
= 10A, Clamp diode part
Forward voltage drop
IGBT part
Thermal resistance
Clamp diode part
(Note.4)
CONVERTER PART
Symbol
I
RRM
V
FM
R
th(j-c)
Parameter
Repetitive reverse current
Forward voltage drop
Thermal resistance
Test conditions
V
R
= V
RRM
, T
j
= 150°C
I
F
= 10A
Per 1/6 module
Min.
—
—
—
Limits
Typ.
—
—
—
Max.
8
1.7
2.6
Unit
mA
V
°C/W
Sep. 2000
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
