MITSUBISHI IGBT MODULES
CM10AD00-24H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
THYRISTOR PART
Limits
Unit
Symbol
Parameter
Test conditions
Min.
—
Typ.
—
Max.
1
mA
mA
V
IDRM
IRRM
ITM
Repetitive peak off-state current VD=1600V
Repetitive peak reverse current VR=1600V
—
—
—
—
—
—
—
—
1
1.45
50
IT=10A, instantaneous means
On-state voltage
IGT
Gate trigger current
Gate trigger voltage
VD=6V, IT=1A
VD=6V, IT=1A
mA
V
3
VGT
Critical rate of rise of off-state
Voltage
dv/dt
Tj=125°C, VD=1070V, exp. waveform
500
—
—
V/µs
—
—
mA
IH
Holding current
50
—
—
Rth(j-c)
Thermal resistance
1.75
°C/W
THERMISTOR PART
Symbol Parameter
Limits
Typ.
100
Test conditions
Unit
Min.
—
Max.
—
Resistance
B Constant
RTH
TC = 25°C
kΩ
B
Resistance at 25°C, 50°C
(Note.5)
—
4000
—
K
RESISTOR PART
Limits
Typ.
5.9
Symbol
Parameter
Test conditions
Unit
Min.
—
Max.
—
Resistance
R
Measured between N-N1
mΩ
—
Temperature coefficient
—
0.048
—
%/°C
COMMON RATING
Limits
Typ.
Symbol
Parameter
Contact thermal resistance
Test conditions
Unit
Min.
—
Max.
—
Case to fin, Thermal compound applied*1 (1 module)
0.05
°C/W
Rth(c-f)
Note.1 IE, VEC, trr, Qrr, diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2 Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3 Junction temperature (Tj) should not increase beyond 150°C.
4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5 B = (InR1-InR2)/(1/T1-1/T2)
R1 : Resistance at T1(K)
R2 : Resistance at T2(K)
1 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
Sep. 2000
MITSUBISHI [ Mitsubishi Group ]
