ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H4552M1
MAXIMUM RATINGS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
V
DD
V
GG
P
in
P
out
T
case(OP)
T
stg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
V
GG
<5V, P
in
=0W
V
DD
<12.5V, P
in
=50mW
f=450-520MHz,
V
GG
<5V
RATING
17
6
100
45
-30 to +100
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
SYMBOL PARAMETER
F
P
out
ηT
2f
o
ρ
in
I
GG
I
DD
—
—
Frequency Range
Output Power
Total Efficiency
2
nd
CONDITIONS
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
V
DD
=0V, V
GG
=5V, P
in
=0W
V
DD
=17V, V
GG
=0V, P
in
=0W
V
DD
=10.0-15.2V, P
in
=25-70mW,
5<P
out
<40W (V
GG
control), Load VSWR=3:1
V
DD
=15.2V, P
in
=50mW,
P
out
=30W (V
GG
control), Load VSWR=20:1
MIN
450
30
42
TYP
MAX
520
UNIT
MHz
W
%
Harmonic
-40
3:1
1
1
No parasitic oscillation
No degradation or destroy
dBc
—
mA
mA
—
—
Input VSWR
Gate Current
Leakage Current
Stability
Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
RA30H4552M1
MITSUBISHI ELECTRIC
2/9
3 Mar 2008
rd
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
