ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H4552M1
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(V
GG
).
When the gate voltage is close to zero, the nominal output signal (P
out
=30W) is attenuated up to 60 dB and only
a small leakage current flows from the battery into the drain.
Around V
GG
=0V(minimum), the output power and drain current increases substantially.
Around V
GG
=4V (typical) to V
GG
=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power P
in
.
The gate voltage is used to set the drain’s quiescent current for the required linearity.
Load condition of Output terminal:
This module suppose to use on the condition that load impedance is 50ohm. On the over load condition,this
module run into the short mode in the worst case and the module involve the risk of burn out and smoking of
parts including the substrate in the module.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance Z
L
=50Ω?
c) Is the source impedance Z
G
=50Ω?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips
and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally
induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions
exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile
radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout,
which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures
are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there
is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or
mishap.
rd
RA30H4552M1
MITSUBISHI ELECTRIC
8/9
3 Mar 2008
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
