ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA30H4552M1
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50Ω, unless otherwise specified)
O U T PU T PO WE R , T O T AL E FFIC IE N C Y ,
v e rsus FR E Q U E N C Y
70
OUTPUT POWER P
out
(W)
TOTAL EFFICIENCY(%)
60
50
40
30
20
10
V
D D
=12.5V
V
GG
=5V
P
in
=50m W
P
out
2
nd
, 3
rd
H AR M O N IC S v e rsus FR E Q U E N C Y
-30
HARMONICS (dBc)
η
T
-40
-50
-60
-70
-80
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
2
nd
3
rd
430 440 450 460 470 480 490 500 510 520 530
430 440 450 460 470 480 490 500 510 520 530
F RE Q UE NCY f(M Hz )
FRE Q UE NCY f(M Hz )
IN PU T VSWR v e rsus FR E Q U E N C Y
5
V
DD
=12.5V
V
GG
=5V
P
in
=50m W
INPUT VSWR
ρ
in
(-)
4
3
2
ρ
in
1
430 440 450 460 470 480 490 500 510 520 530
FRE Q UE NCY f(M Hz )
O UT PUT PO WER, PO WER G AIN and
DRAIN CURRENT v e rsus INPUT PO WER
60
OUTPUT POWER P
out
(dBm)
50
40
30
20
10
0
-10
-5
0
5
10
I
D D
f=450M Hz ,
V
DD
=12.5V ,
V
GG
=5V
Gp
P
out
O UT PUT PO WER, PO WER G AIN and
DRAIN CURRENT v e rsus INPUT PO WER
24
OUTPUT POWER P
out
(dBm)
DRAIN CURRENT
DD
(A)
I
POWER GAIN Gp(dB)
20
16
12
8
4
0
20
60
50
40
30
20
I
D D
Gp
P
out
24
DRAIN CURRENT
I
DD
(A)
DRAIN CURRENT
DD
(A)
I
20
16
12
8
f=470M Hz ,
V
DD
=12.5V ,
V
GG
=5V
POWER GAIN Gp(dB)
10
0
-10
-5
0
5
10
4
0
20
15
15
INP UT POW E R P
in
(dB m )
INP UT P OW E R P
in
(dB m )
O UT PUT PO WER, PO WER G AIN and
DRAIN CURRENT v e rsus INPUT PO WER
60
OUTPUT POWER P
out
(dBm)
50
40
30
20
10
0
-10
-5
0
5
10
I
D D
f=490M Hz ,
V
DD
=12.5V ,
V
GG
=5V
Gp
P
out
O UT PUT PO WER, PO WER G AIN and
DRAIN CURRENT v e rsus INPUT PO WER
24
DRAIN CURRENT
DD
(A)
I
20
16
12
8
4
0
20
OUTPUT POWER P
out
(dBm)
60
50
40
30
20
10
0
-10
-5
0
5
10
I
D D
f=520M Hz ,
V
DD
=12.5V ,
V
GG
=5V
Gp
P
out
24
20
16
12
8
4
0
20
POWER GAIN Gp(dB)
POWER GAIN Gp(dB)
15
15
INP UT POW E R P
in
(dB m )
INP UT P OW E R P
in
(dB m )
RA30H4552M1
MITSUBISHI ELECTRIC
3/9
3 Mar 2008
rd
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
