MITSUBISHI THYRISTOR MODULES
TM20RA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
—
—
—
—
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
Item
Thyristor
Diode
P
GM
PG
(AV)
V
FGM
I
FGM
T
j
T
stg
—
—
—
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
—
—
—
—
—
I
RRM
I
DRM
V
TM
V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
10
3
7
5
3
2
CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.5
500
T
j
=125°C
SURGE (NON-REPETITIVE)
CURRENT (A)
400
RATED SURGE (NON-REPETITIVE)
CURRENT
300
200
100
1.5
2.5
3.5
4.5
0
1
2 3
5 7 10
20 30
50 70100
FORWARD VOLTAGE (V)
CONDUCTION TIME (CYCLE AT 60Hz)
GATE CHARACTERISTICS
4
3
2
GATE VOLTAGE (V)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
10
0
2 3 5 7 10
1
1.0
TRANSIENT THERMAL IMPEDANCE
(°C/W)
V
FGM
=10V
10
1
P
GM
=5.0W
7
V
GT
=3.0V
5
P
G(AV)
=
3
0.50W
2
I
GT
=
10
0
50mA
7
5 T
j
=
25°C
3
2
V
GD
=0.25V
10
–1
7
5
410
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
I
FGM
=2.0A
GATE CURRENT (mA)
0.8
0.6
0.4
0.2
0
10
–3
2 3 5 710
–2
2 3 5 7 10
–1
2 3 5 7 10
0
TIME (s)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
