MITSUBISHI THYRISTOR MODULES
TM20RA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
40
AVERAGE POWER DISSIPATION (W)
35
30
25
20
15
10
5
0
0
MAXIMUM AVERAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
180°
120°
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
CASE TEMPERATURE (°C)
110
100
90
80
70
60
50
0
5
10
15
20
θ=30°
60° 90° 120° 180°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
90°
θ=30°
60°
θ
360°
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
5
10
15
20
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER
DISSIPATION (RECTANGULAR WAVE)
40
AVERAGE POWER DISSIPATION (W)
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
θ=30°
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
CASE TEMPERATURE (°C)
110
100
90
80
70
60
50
0
5
10
15
20
25
30
35
40
θ=30°
60°
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
270°
180°
120°
90°
60°
DC
90° 180°
120° 270° DC
AVERAGE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
80
AVERAGE POWER DISSIPATION (W)
70
60
50
40
30
20
10
0
0
10
20
30
40
50
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
AVERAGE CURRENT (A)
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
130
125
CASE TEMPERATURE (°C)
120
115
110
105
100
95
90
85
80
0
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
θ
θ=180°
90°
60°
30°
θ=30°
60°,90°
θ
180°
10
20
30
40
50
RMS CURRENT (A)
RMS CURRENT (A)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
