MITSUBISHI THYRISTOR MODULES
TM20RA-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
80
70
POWER DISSIPATION (W)
(PER SINGLE MODULE)
60
60°
50
40
30
20
10
0
0
5
10
15
20
25
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
120
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
110
100
90
80
70
60
θ θ
360°
RESISTIVE,
INDUCTIVE
LOAD
180°
120°
90°
θ=30°
θ=30°
60° 90° 120° 180°
30
35
40
50
0
5
10
15
20
25
30
35
40
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
80
70
POWER DISSIPATION (W)
(PER SINGLE MODULE)
60
50
40
30
20
10
0
0
10
20
30
40
θ=30°
90°
60°
CASE TEMPERATURE (°C)
(PER SINGLE MODULE)
120°
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
60
80
50
0
10
20
30
40
50
60
70
80
θ=30°
60° 90°
120°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
50
60
70
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
Feb.1999
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
