ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Each Side)
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
125
—
—
—
—
—
—
5.0
1.0
Vdc
mAdc
µAdc
ON CHARACTERISTICS (Each Side)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
VGS(th)
VDS(on)
gfs
1.0
1.0
5.0
3.0
3.0
7.0
5.0
5.0
—
Vdc
Vdc
mhos
DYNAMIC CHARACTERISTICS (Each Side)
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
350
220
15
—
—
—
pF
pF
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz)
Drain Efficiency
(VDD = 50 V, Pout = 300 W, f = 175 MHz, ID (Max) = 11 A)
Load Mismatch
(VDD = 50 V, Pout = 300 W, IDQ = 500 mA,
VSWR 5:1 at all Phase Angles)
R1
+
BIAS 0 – 6 V
–
L1
R2
C1
INPUT
D.U.T.
T2
C12
T1
OUTPUT
C4
C5
C9
C10
C11
Gps
η
ψ
No Degradation in Output Power
14
50
16
55
—
—
dB
%
L2
+
50 V
–
C6
C2
C3
C7
C8
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhm, 1/2 W
C1 — Arco 424
C2 — Arco 404
C3, C4, C7, C8, C9 — 1000 pF Chip
C5, C10 — 0.1
µF
Chip
C6 — 330 pF Chip
C11 — 0.47
µF
Ceramic Chip, Kemet 1215 or
C11 —
Equivalent (100 V)
C12 — Arco 422
L1 — 10 Turns AWG #18 Enameled Wire,
L1 —
Close Wound, 1/4″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 —
1.5 – 2.0
µH
Total Inductance
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or
Equivalent.
T1 — 9:1 RF Transformer. Can be made of 15 – 18 Ohms
T1 —
Semirigid Co–Ax, 62 – 90 Mils O.D.
T2 — 1:4 RF Transformer. Can be made of 16 – 18 Ohms
T2 —
Semirigid Co–Ax, 70–90 Mils O.D.
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
ε
r = 5.0
NOTE: For stability, the input transformer T1 must be loaded
NOTE:
with ferrite toroids or beads to increase the common
NOTE:
mode inductance. For operation below 100 MHz. The
NOTE:
same is required for the output transformer.
See Figure 6 for construction details of T1 and T2.
Figure 1. 175 MHz Test Circuit
MRF151G
2
MOTOROLA RF DEVICE DATA
MOTOROLA [ MOTOROLA, INC ]
