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MRF151G 参数 Datasheet PDF下载

MRF151G图片预览
型号: MRF151G
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道宽带射频功率MOSFET [N-CHANNEL BROADBAND RF POWER MOSFET]
分类和应用: 晶体射频场效应晶体管放大器局域网
文件页数/大小: 6 页 / 160 K
品牌: MOTOROLA [ MOTOROLA, INC ]
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TYPICAL CHARACTERISTICS
350
f = 150 MHz
Pout , OUTPUT POWER (WATTS)
300
250
200
150
100
50
0
0
5
Pin, INPUT POWER (WATTS)
10
5
2
5
10
30
f, FREQUENCY (MHz)
100
200
VDD = 50 V
IDQ = 2 x 250 mA
175 MHz
200 MHz
GPS, POWER GAIN (dB)
30
25
20
15
10
VDD = 50 V
IDQ = 2 x 250 mA
Pout = 150 W
Figure 7. Output Power versus Input Power
Figure 8. Power Gain versus Frequency
f = 175 MHz
150
125
100
INPUT, Zin
(GATE TO GATE)
Zo = 10
30
125 150
f = 175 MHz
100
30
OUTPUT, ZOL*
(DRAIN TO DRAIN)
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
Figure 9. Input and Output Impedance
MRF151G
4
MOTOROLA RF DEVICE DATA