ON Semiconductort
One Watt High Current
Transistors
PNP Silicon
w
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
MPSW51
MPSW51A
MPSW51
MPSW51A
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
−30
−40
−40
−50
−5.0
−1000
1.0
8.0
2.5
20
−55
to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
Watts
mW/°C
°C
MPSW51
MPSW51A*
*ON Semiconductor Preferred Device
MAXIMUM RATINGS
1
2
3
CASE 29−10, STYLE 1
TO−92 (TO−226AE)
COLLECTOR
3
2
BASE
1
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
125
50
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(1)
(I
C
=
−1.0
mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
=
−100
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
=
−100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
=
−30
Vdc, I
E
= 0)
(V
CB
=
−40
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
=
−3.0
Vdc, I
C
= 0)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
MPSW51
MPSW51A
MPSW51
MPSW51A
V
(BR)CEO
Vdc
−30
−40
−40
−50
−5.0
—
—
Vdc
—
—
—
Vdc
μAdc
V
(BR)CBO
V
(BR)EBO
I
CBO
MPSW51
MPSW51A
—
—
—
−0.1
−0.1
−0.1
I
EBO
μAdc
©
Semiconductor Components Industries, LLC, 2006
March, 2006
−
Rev. 3
1
Publication Order Number:
MPSW51/D
ONSEMI [ ON SEMICONDUCTOR ]
