MPSW51 MPSW51A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
=
−10
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−100
mAdc, V
CE
=
−1.0
Vdc)
(I
C
=
−1000
mAdc, V
CE
=
−1.0
Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
=
−1000
mAdc, I
B
=
−100
mAdc)
Base
−Emitter
On Voltage
(I
C
=
−1000
mAdc, V
CE
=
−1.0
Vdc)
h
FE
—
55
60
50
—
—
—
—
—
−0.7
−1.2
Vdc
Vdc
V
CE(sat)
V
BE(on)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
=
−50
mAdc, V
CE
=
−10
Vdc, f = 20 MHz)
Output Capacitance
(V
CB
=
−10
Vdc, I
E
= 0, f = 1.0 MHz)
f
T
C
obo
50
—
—
30
MHz
pF
200
VCE , COLLECTOR VOLTAGE (VOLTS)
−1.0
−0.8
−0.6
−0.4
−0.2
T
J
= 25°C
0
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
I
B
, BASE CURRENT (mA)
I
C
=
−10 mA
I
C
=
−50 mA
I
C
= I
C
=
I
C
=
I
C
=
−100 −250 −500 mA −1000 mA
mA mA
h FE , CURRENT GAIN
100
70
50
V
CE
= −1.0 V
T
J
= 25°C
20
−10
−20
−50
−100
−200
−500
−1000
−50 −100
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
T
J
= 25°C
−0.8
V, VOLTAGE (VOLTS)
−0.6
−0.4
−0.2
V
BE(SAT)
@ I
C
/I
B
= 10
qV
B, TEMPERATURE COEFFICIENT (mV/
°
C)
−1.0
−0.8
−1.2
−1.6
qV
B
for V
BE
V
BE(ON)
@ V
CE
= −1.0 V
−2.0
−2.4
−2.8
−1.0 −2.0
V
CE(SAT)
@ I
C
/I
B
= 10
−5.0
−10
−20
−50 −100 −200
0
−1.0 −2.0
−500 −1000
−5.0
−10
−20
−50 −100 −200
−500 −1000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
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