MPSW51 MPSW51A
f T , CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
300
200
C, CAPACITANCE (pF)
160
T
J
= 25°C
120
100
70
50
30
−10
V
CE
= −10 V
T
J
= 25°C
f = 20 MHz
80
C
ibo
40
C
obo
−20
−50
−100
−200
−500
−1000
0
I
C
, COLLECTOR CURRENT (mA)
C
obo
C
ibo
−5.0
−1.0
−20
−10
−15
−2.0
−3.0
−4.0
V
R
, REVERSE VOLTAGE (VOLTS)
−25
−5.0
Figure 5. Current Gain — Bandwidth Product
Figure 6. Capacitance
−1.0 k
I C , COLLECTOR CURRENT (mA)
−500
−200
−100
−50
−20
−10
−1.0
−2.0
T
A
= 25°C
T
C
= 25°C
1.0 ms
1.0 ms
100
ms
DUTY CYCLE
≤
10%
MPSW51
MPSW51A
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0
−10
−20 −30 −40
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating
Area
http://onsemi.com
3
ONSEMI [ ON SEMICONDUCTOR ]
