XP04312
Characteristics charts of Tr1
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
160
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
T
a
=
75°C
200
25°C
−25°C
25°C
0.1
−25°C
40
0.2 mA
100
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
IN
I
O
V
O
=
5 V
T
a
=
25°C
100
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJJ00177BED
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
