XP04312
Characteristics charts of Tr2
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
−
0.9mA
−
0.8mA
−
0.7mA
−
0.6mA
−
0.5mA
−80
−
0.4mA
−
0.3mA
−40
−
0.2mA
−
0.1mA
0
T
a
=
25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
−1
25°C
−
0.1
−25°C
T
a
= 75°C
T
a
= 75°C
200
25°C
−25°C
100
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
=
−5
V
T
a
= 25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(µA)
4
3
−10
2
Input voltage V
IN
(V)
−
0.6
−
0.8
−1.0
−1.2
−1.4
−10
3
−10
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJJ00177BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
