Philips Semiconductors
Product specification
High-speed diodes
FEATURES
•
Hermetically sealed leaded glass
SOD27 (DO-35) package
•
High switching speed: max. 4 ns
•
General application
•
Continuous reverse voltage:
max. 50 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 600 mA and 450 mA
respectively.
The marking band indicates the cathode.
handbook, halfpage
k
1N4150; 1N4151
DESCRIPTION
The 1N4150 and 1N4151 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass SOD27
(DO-35) packages.
a
MAM246
APPLICATIONS
•
High-speed switching
•
1N4150: general purpose use in
computer and industrial
applications
•
1N4151: military and industrial
applications.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
1N4150
1N4151
I
FRM
repetitive peak forward current
1N4150
1N4151
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board; lead length 10 mm.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
−
−
600
450
mA
mA
see Fig.2; note 1
−
−
300
200
mA
mA
CONDITIONS
−
−
MIN.
MAX.
75
50
V
V
UNIT
1999 Jun 01
2
PHILIPS [ NXP SEMICONDUCTORS ]
