Philips Semiconductors
Product specification
High speed CAN transceiver
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CC
V
TXD
V
RXD
V
STB
V
CANH
V
CANL
V
SPLIT
V
trt
V
esd
PARAMETER
supply voltage
DC voltage on pin TXD
DC voltage on pin RXD
DC voltage on pins STB
DC voltage on pin CANH
DC voltage on pin CANL
DC voltage on pin SPLIT
transient voltages on pins CANH,
CANL and SPLIT
electrostatic discharge voltage
0 < V
CC
< 5.25 V; no time limit
0 < V
CC
< 5.25 V; no time limit
0 < V
CC
< 5.25 V; no time limit
according to ISO 7637; see Fig.5
Human Body Model (HBM); note 1
pins CANH and CANL
and SPLIT
all other pins
Machine Model (MM); note 2
T
vj
T
stg
Notes
1. Equivalent to discharging a 100 pF capacitor via a 1.5 kΩ series resistor.
virtual junction temperature
storage temperature
note 3
−6
−4
−200
−40
−55
+6
+4
+200
+150
+150
CONDITIONS
no time limit
operating range
MIN.
−0.3
4.75
−0.3
−0.3
−0.3
−27
−27
−27
−200
TJA1040
MAX.
+6
5.25
V
V
UNIT
V
CC
+ 0.3 V
V
CC
+ 0.3 V
V
CC
+ 0.3 V
+40
+40
+40
+200
V
V
V
V
kV
kV
V
°C
°C
2. Equivalent to discharging a 200 pF capacitor via a 0.75
µH
series inductor and a 10
Ω
series resistor.
3. Junction temperature in accordance with IEC 60747-1. An alternative definition of T
vj
is: T
vj
= T
amb
+ P
×
R
th(vj-amb)
,
where R
th(vj-amb)
is a fixed value to be used for the calculating of T
vj
. The rating for T
vj
limits the allowable
combinations of power dissipation (P) and ambient temperature (T
amb
).
THERMAL CHARACTERISTICS
In accordance with IEC 60747-1.
SYMBOL
R
th(vj-a)
R
th(vj-s)
PARAMETER
thermal resistance from virtual junction
to ambient in SO8 package
thermal resistance from virtual junction
to substrate of bare die
CONDITIONS
in free air
in free air
VALUE
145
50
UNIT
K/W
K/W
QUALITY SPECIFICATION
Quality specification in accordance with
“AEC-Q100”.
2003 Oct 14
5
PHILIPS [ NXP SEMICONDUCTORS ]
