2SK2869(L), 2SK2869(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
I
AP
*
3
E
AR
*
3
Pch*
2
Tch
Tstg
Ratings
60
±20
20
80
20
20
34
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note:
4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
±20
—
—
1.5
—
—
10
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.033
0.055
16
740
380
140
10
110
105
120
1.0
40
Max
—
—
±10
10
2.5
0.045
0.07
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
V
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 10 A, V
GS
= 10 V*
4
I
D
= 10 A, V
GS
= 4 V*
4
I
D
= 10 A, V
DS
= 10 V*
4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 10 A, V
GS
= 10 V,
R
L
= 3
Ω
I
F
= 20 A, V
GS
= 0
I
F
= 20 A, V
GS
= 0
di
F
/ dt = 50A/µs
Rev.2.00 Sep 07, 2005 page 2 of 8
RENESAS [ RENESAS TECHNOLOGY CORP ]
