2SK2869(L), 2SK2869(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
y
fs
(S)
0.10
Pulse Test
10 A
0.08
V
GS
= 4 V
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1
0.5
0.1
V
DS
= 10 V
Pulse Test
Tc = –25°C
2, 5 A
25°C
75°C
0.06
0.04
10 V
2, 5, 10 A
0.02
0
–40
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
1000
5000
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
2000
Drain Current I
D
(A)
Typical Capacitance
vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
1000
500
200
100
50
20
10
V
GS
= 0
f = 1 MHz
Ciss
200
100
50
Coss
Crss
20
10
0.1
0.3
1
3
10
30
100
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
100
I
D
= 20 A
20
1000
300
Switching Characteristics
Switching Time t (ns)
80
V
DD
= 50 V
25 V
10 V
V
GS
16
td(off)
100
30
10
3
1
0.1
60
V
DS
12
tf
tr
40
8
td(on)
20
V
DD
= 50 V
25 V
10 V
4
0
40
V
GS
= 10 V,
V
DD
= 30 V
PW = 5
µs,
duty < 1 %
0
8
16
24
32
0.3
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 4 of 8
RENESAS [ RENESAS TECHNOLOGY CORP ]
