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2SK2869 参数 Datasheet PDF下载

2SK2869图片预览
型号: 2SK2869
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET高速电源开关 [Silicon N Channel MOS FET High Speed Power Switching]
分类和应用: 开关电源开关
文件页数/大小: 9 页 / 95 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
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2SK2869(L), 2SK2869(S)
Main Characteristics
Power vs. Temperature Derating
40
200
100
30
µ
s
10
0
µ
s
1m
s
10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
50
20
10
DC
PW
20
10
10
Op
ms
era
(1
tio
5
sh
n(
ot)
Tc
=2
Operation in
5
°
2
C)
this area is
=
1 limited by R
DS(on)
0.5
Ta = 25°C
0.2
0
50
100
150
200
1
2
5
10
20
50
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
10 V
6V
5V
Pulse Test
4.5 V
30
4V
20
3.5 V
10
V
GS
= 3 V
Typical Transfer Characteristics
20
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
40
16
12
8
Tc = 75°C
25°C
–25°C
4
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
1.0
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Pulse Test
0.2
0.1
V
GS
= 4 V
GS
0.05
0.8
0.6
I
D
= 15 A
0.4
10 A
5A
10 V
0.02
0.01
0.1 0.2
0.2
0
4
8
12
16
20
0.5
1
2
5
10 20
50
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 8