Si500D
D
IFFERENTIAL
O
UTPUT
S
I L I C O N
O
SCILLATOR
Features
Quartz-free, MEMS-free, and PLL-free all-silicon
oscillator
Any output frequencies from 0.9 to 200 MHz
Short lead times
Excellent temperature stability (±20 ppm)
Highly reliable startup and operation
High immunity to shock and vibration
Low jitter: <1.5 ps
0 to 85 °C operation includes 10-year aging in hot
environments
Footprint compatible with industry-
standard 3.2 x 5.0 mm XOs
CMOS and SSTL versions available
Driver stopped, tri-state, or powerdown
operation
RoHS compliant
1.8, 2.5, or 3.3 V options
Low power
More than 10x better fit rate than
competing crystal solutions
Specifications
Parameters
Frequency Range
Temperature stability,
0 to +70 °C
Temperature stability,
0 to +85 °C
Total stability,
0 to +70 °C operation
1
Total stability,
0 to +85 °C operation
2
Condition
Min
0.9
—
—
—
—
0
–55
1.71
2.25
2.97
—
—
—
—
—
—
—
—
—
—
—
Typ
—
±10
±20
—
—
—
—
—
—
—
34.0
19.3
14.9
25.3
33
16
24.5
24.3
22.2
9.7
1.0
Max
200
—
—
±150
±250
+85
+125
1.98
2.75
3.63
36.0
22.2
16.5
29.3
36
—
27.7
26.7
25
10.7
1.9
Units
MHz
ppm
ppm
ppm
ppm
°C
°C
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Frequency Stability
Operating Temperature
Storage Temperature
Supply Voltage
1.8 V option
2.5 V option
3.3 V option
LVPECL
Low Power LVPECL
LVDS
HCSL
Differential CMOS(3.3 V option,
10 pF on each output, 200 MHz)
Differential CMOS(3.3 V option,
1 pFon each output, 40 MHz)
Differential SSTL-3.3
Differential SSTL-2.5
Differential SSTL-1.8
Tri-State
Powerdown
Supply Current
Notes:
1.
Inclusive of 25 °C initial frequency accuracy, operating temperature range, supply voltage change, output load change,
first-year aging at 25 °C, shock, vibration, and one solder reflow.
2.
Inclusive of 25 °C initial frequency accuracy, operating temperature range, supply voltage change, output load change,
ten-year aging at 85 °C, shock, vibration, and one solder reflow.
3.
See “AN409: Output Termination Options for the Si500S and Si500D Silicon Oscillators” for further details regarding
output clock termination recommendations.
4.
V
TT
= .5 x V
DD
.
5.
V
TT
= .45 x V
DD
.
Rev. 1.0 5/11
Copyright © 2011 by Silicon Laboratories
Si500D
SILABS [ SILICON LABORATORIES ]
