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STM8S105C4B3 参数 Datasheet PDF下载

STM8S105C4B3图片预览
型号: STM8S105C4B3
PDF下载: 下载PDF文件 查看货源
内容描述: 接入线路, 16兆赫STM8S 8位MCU ,最多32 KB闪存,集成的EEPROM , 10位ADC ,定时器, UART , SPI , I²C [Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I²C]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 127 页 / 1323 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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STM8S105xx
Electrical characteristics
Symbol Parameter
Accuracy of HSI
oscillator (factory
calibrated)
Conditions
V
DD
= 5 V, T
A
= 25°C
Min
-1.0
-2.0
Typ
Max
1.0
2.0
Unit
V
DD
= 5 V, 25 °C ≤ T
A
85 °C
2.95 ≤ V
DD
≤ 5.5 V,-40 °C
≤ T
A
≤ 125 °C
-3.0
3.0
t
su(HSI)
HSI oscillator
wakeup time
including calibration
170
1.0
µs
I
DD(HSI)
HSI oscillator power
consumption
(1)
(2)
(3)
250
µA
Refer to application note.
Guaranteed by design, not tested in production.
Data based on characterization results, not tested in production.
Figure 21: Typical HSI accuracy at V
DD
= 5 V vs 5 temperatures
DocID14771 Rev 9
79/127