STPS160A/U
Fig. 3-1:
Non repetive surge peak forward current
versus overload duration (maximum values) (SMB).
IM(A)
8
7
6
5
4
3
2
1
0
1E-3
I
M
t
Fig. 3-2:
Non repetive surge peak forward current
versus overload duration (maximum values) (SMA).
IM(A)
8
7
6
Ta=25°C
5
4
3
Ta=25°C
Ta=50°C
Ta=50°C
I
M
t
Ta=100°C
δ
=0.5
2
1
0
1E-3
Ta=100°C
δ
=0.5
t(s)
1E-2
1E-1
1E+0
t(s)
1E-2
1E-1
1E+0
Fig. 4-1:
Relative variation of thermal impedance
junction to ambient versus pulse duration (SMB).
Fig. 4-2:
Relative variation of thermal impedance
junction to ambient versus pulse duration (SMA).
Zth(j-a)/Rth(j-a)
1.0
0.9
Printed circuit board: S(Cu)=1.5cm² (e=35µm)
0.8
0.7
0.6
δ=0.5
0.5
0.4
0.3
δ=0.2
0.2
δ=0.1
0.1
tp(s)
Single pulse
0.0
1E-2
1E-1
1E+0
1E+1
Zth(j-a)/Rth(j-a)
1.0
0.9
Printed circuit board: S(Cu)=1.5cm² (e=35µm)
0.8
0.7
0.6
δ=0.5
0.5
0.4
0.3
δ=0.2
0.2
δ=0.1
0.1
tp(s)
Single pulse
0.0
1E-2
1E-1
1E+0
T
T
δ
=tp/T
tp
δ
=tp/T
tp
1E+2
1E+3
1E+1
1E+2
Fig. 5:
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+3
Tj=100°C
Fig. 6:
Junction capacitance versus reverse volt-
age applied (typical values)
C(pF)
200
F=1MHz
Tj=25°C
1E+2
Tj=75°C
100
50
1E+1
1E+0
1E-1
Tj=25°C
20
VR(V)
0
5
10 15 20 25 30 35 40 45 50 55 60
VR(V)
10
1
2
5
10
20
50
100
3/6
STMICROELECTRONICS [ STMICROELECTRONICS ]
