TSL2571
LIGHT-TO-DIGITAL CONVERTER
TAOS117A − FEBRUARY 2011
Operating Characteristics, V
DD
= 3 V, T
A
= 255C (unless otherwise noted)
PARAMETER
Active
I
DD
Supply current
Wait mode
Sleep mode — no
3 mA sink current
V
OL
I
LEAK
V
IH
V
IL
INT,
INT SDA output low voltage
Leakage current, SDA, SCL, INT pins
TSL25711, TSL25715
SCL,
SCL SDA input high voltage
SCL,
SCL SDA input low voltage
TSL25713, TSL25717
TSL25711, TSL25715
TSL25713, TSL25717
6 mA sink current
I
2
C
activity
0
0
−5
0.7 V
DD
1.25
0.3 V
DD
0.54
TEST CONDITIONS
MIN
TYP
175
65
2.5
4
0.4
0.6
5
V
μA
V
V
MAX
250
μA
UNIT
ALS Characteristics, V
DD
= 3 V, T
A
= 255C, Gain = 16, AEN = 1 (unless otherwise noted)
(Notes 1 ,2, 3)
PARAMETER
Dark ADC count value
ADC integration time step size
ADC Number of integration steps
ADC counts per step
ADC count value
ATIME = 0xFF
ATIME = 0xC0
λ
p
= 625 nm, E
e
= 171.6
μW/cm
2
,
ATIME = 0xF6 (27 ms) See note 2.
ADC count value
λ
p
= 850 nm, E
e
= 219.7
μW/cm
2
,
ATIME = 0xF6 (27 ms) See note 3.
CH0
CH1
CH0
CH1
10.8
10 8
41
4000
TEST CONDITIONS
E
e
= 0, AGAIN = 120
×
,
ATIME = 0xDB (100 ms)
ATIME = 0xFF
CHANNEL
CH0
CH1
MIN
0
0
2.58
1
0
0
4000
5000
790
5000
2800
15.8
15 8
56
29.1
4.6
22.8
12.7
−10
−10
10
−10
10
10
10
%
counts/
(μW/
cm
2
)
20.8
20 8
68
%
6000
counts
TYP
1
1
2.72
MAX
5
5
2.9
256
1024
65535
6000
counts
ms
steps
counts
counts
UNIT
ADC count value ratio: CH1/CH0
λ
p
= 625 nm ATIME = 0xF6 (27 ms) See note 2
nm,
λ
p
= 850 nm ATIME = 0xF6 (27 ms) See note 3
nm,
λ
p
= 625 nm, ATIME = 0xF6 (27 ms)
See note 2.
CH0
CH1
CH0
CH1
R
e
Irradiance responsivity
λ
p
= 850 nm, ATIME = 0xF6 (27 ms)
See note 3.
8
×
16
×
120
×
Gain
G i scaling, relative to 1
×
gain
li
l ti t
i
setting
NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 625 nm LEDs
and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production.
2. The 625 nm irradiance E
e
is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength
λp
= 625 nm and spectral halfwidth
Δλ½
= 20 nm.
3. The 850 nm irradiance E
e
is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength
λp
= 850 nm and spectral halfwidth
Δλ½
= 42 nm.
Copyright
E
2011, TAOS Inc.
r
r
The
LUMENOLOGY
r
Company
4
www.taosinc.com
TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
