SBOS584B
–
NOVEMBER 2011
–
REVISED DECEMBER 2011
TYPICAL CHARACTERISTICS (continued)
V
S
=
±18
V, V
CM
= V
S
/2, R
LOAD
= 10 kΩ connected to V
S
/2, and C
L
= 100 pF, unless otherwise noted.
LARGE-SIGNAL SETTLING TIME
(10-V Positive Step)
10
8
G =
-
1
10
8
LARGE-SIGNAL SETTLING TIME
(10-V Negative Step)
G =
-
1
D
From Final Value (mV)
4
2
0
-
2
-
4
-
6
-
8
-
10
0
10
20
30
Time (
m
s)
40
D
From Final Value (mV)
6
12-Bit Settling
6
4
2
0
-
2
-
4
-
6
-
8
-
10
(
±
1/2 LSB =
±
0.024%)
12-Bit Settling
(
±
1/2 LSB =
±
0.024%)
50
60
0
10
20
30
Time (
m
s)
40
50
60
Figure 19.
SHORT-CIRCUIT CURRENT vs TEMPERATURE
30
20
10
Output Voltage (V
PP
)
15
V
S
=
±
15 V
12.5
10
7.5
V
S
=
±
5 V
5
2.5
0
V
S
=
±
2.25 V
Figure 20.
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
I
SC
(mA)
I
SC
, Source
0
-
10
-
20
-
30
-55
-35
-15
5
25
45
65
85
105
125
Temperature (
°
C)
I
SC
, Sink
Maximum output voltage without
slew-rate induced distortion.
1k
10k
100k
Frequency (Hz)
1M
10M
Figure 21.
CHANNEL SEPARATION vs FREQUENCY
-60
-
70
Channel A to B
Channel B to A
160
140
120
Figure 22.
EMIRR IN+ vs FREQUENCY
Channel Separation (dB)
-
80
-
90
-
100
-
110
-
120
-
130
-
140
-
150
1
10
100
1k
10k
100k
1M
10M
100M
Frequency (Hz)
EMIRR IN+ (dB)
100
80
60
40
20
0
10M
100M
Frequency (Hz)
1G
10G
Figure 23.
Figure 24.
10
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©
2011, Texas Instruments Incorporated
TI [ TEXAS INSTRUMENTS ]
