SBOS584B
–
NOVEMBER 2011
–
REVISED DECEMBER 2011
TYPICAL CHARACTERISTICS (continued)
V
S
=
±18
V, V
CM
= V
S
/2, R
LOAD
= 10 kΩ connected to V
S
/2, and C
L
= 100 pF, unless otherwise noted.
OPEN-LOOP GAIN AND PHASE vs FREQUENCY
140
120
100
Gain (dB)
80
60
40
20
0
−20
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
0
100M
G007
OPEN-LOOP GAIN vs TEMPERATURE
3
2.5
V
SUPPLY
= 4 V, R
L
= 10 kW
V
SUPPLY
= 36 V, R
L
= 10 kW
180
Gain
Phase
135
2
Phase (°)
90
A
OL
(
m
V/V)
1.5
1
0.5
0
-55
-35
-15
5
25
45
65
85
105
125
Temperature (
°
C)
45
Figure 7.
Figure 8.
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
(100-mV Output Step)
40
35
R
L
= 10 kW
R
OUT
= 0
W
R
OUT
= 25
W
R
OUT
= 50
W
OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY
10k
1k
Overshoot (%)
30
25
20
15
Z
O
(
W
)
100
10
+18 V
G = +1
R
OUT
10
Device
R
L
C
L
1
5
-18
V
1m
1
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
0
0
100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Figure 9.
SMALL-SIGNAL OVERSHOOT vs CAPACITIVE LOAD
(100-mV Output Step)
40
R
OUT
= 0
W
35
30
R
OUT
= 25
W
R
OUT
= 50
W
5 V/div
Figure 10.
NO PHASE REVERSAL
+18 V
Device
Overshoot (%)
25
20
15
R
I
= 10 kW
R
F
= 10 kW
+18 V
R
OUT
-18
V
37 V
PP
Sine Wave
(
±
18.5 V)
G =
-
1
V
IN
V
OUT
Time (100
m
s/div)
10
5
R
L
= 10 kW
0
0
Device
C
L
-18
V
100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
Figure 11.
Figure 12.
8
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Copyright
©
2011, Texas Instruments Incorporated
TI [ TEXAS INSTRUMENTS ]
