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OPA2180IDR 参数 Datasheet PDF下载

OPA2180IDR图片预览
型号: OPA2180IDR
PDF下载: 下载PDF文件 查看货源
内容描述: 0.1 μV / A ° Ç漂移,低噪声,轨到轨输出, 36 -V ,零漂移运算放大器 [0.1-μV/°C Drift, Low-Noise, Rail-to-Rail Output, 36-V, Zero-Drift OPERATIONAL AMPLIFIERS]
分类和应用: 运算放大器
文件页数/大小: 25 页 / 872 K
品牌: TI [ TEXAS INSTRUMENTS ]
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SBOS584B
NOVEMBER 2011
REVISED DECEMBER 2011
APPLICATION INFORMATION
The OPAx180 family of operational amplifiers combine precision offset and drift with excellent overall
performance, making them ideal for many precision applications. The precision offset drift of only 0.085
µV/°C
provides stability over the entire temperature range. In addition, the device offers excellent overall performance
with high CMRR, PSRR, and A
OL
. As with all amplifiers, applications with noisy or high-impedance power
supplies require decoupling capacitors close to the device pins. In most cases, 0.1-µF capacitors are adequate.
OPERATING CHARACTERISTICS
The OPAx180 family of amplifiers is specified for operation from 4 V to 36 V (±2 V to
±18
V). Many of the
specifications apply from
–40°C
to +105°C. Parameters that can exhibit significant variance with regard to
operating voltage or temperature are presented in the
EMI REJECTION
The OPAx180 uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI
interference from sources such as wireless communications and densely populated boards with a mix of analog
signal chain and digital components. EMI immunity can be improved with circuit design techniques; the OPAx180
benefits from these design improvements. Texas Instruments has developed the ability to accurately measure
and quantify the immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz to
6 GHz.
shows the results of this testing on the OPAx180. Detailed information can also be found in the
available for download from the TI
website.
160
140
120
EMIRR IN+ (dB)
100
80
60
40
20
0
10M
100M
Frequency (Hz)
1G
10G
Figure 25. OPAx180 EMIRR Testing
Copyright
©
2011, Texas Instruments Incorporated
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