MP4305
I
C
– V
CE
−8
−10
−3
−1.5
Common emitter
Ta = 25°C
−8
I
C
– V
BE
Common emitter
VCE =
−5
V
(A)
(A)
Collector current
I
C
−6
−1.0
−0.7
−6
Collector current
I
C
−4
−0.5
−4
−0.3
−2
IB =
−0.2
mA
−2
Ta = 100°C
−55
25
0
0
−2
−4
−6
−8
−10
0
0
−0.8
−1.6
−2.4
−3.2
−4.0
Collector-emitter voltage
V
CE
(V)
Base-emitter voltage V
BE
(V)
h
FE
– I
C
30000
Common emitter
VCE =
−5
V
−2.8
V
CE
– I
B
(V)
Common emitter
Ta = 25°C
−2.4
IC =
−8
A
−2.0
−7
−6
−5
−1.2
−4
−3
−2
−1
−0.5
−0.1
−1
−10
−100
−1000
5000
3000
Ta = 100°C
25
−55
DC current gain
Collector-emitter voltage
V
CE
−0.3
−1
−3
−10
−20
h
FE
10000
−1.6
1000
500
−0.8
200
−0.05 −0.1
Collector current
I
C
(A)
−0.4
−0.1
Base current
I
B
(mA)
V
CE (sat)
– I
C
−10
−10
IC/IB = 500
V
BE (sat)
– I
C
Base-emitter saturation voltage
V
BE (sat)
(V)
Common emitter
Common emitter
−5
−3
Ta =
−55°C
25
−1
100
IC/IB = 500
Collector-emitter saturation voltage
V
CE (sat)
(V)
−5
−3
−1
25
−0.5
−0.3
−0.1
Ta =
−55°C
100
−0.5
−0.3
−0.1
−0.3
−1
−3
−10
−0.3
−1
−3
−10
Collector current
I
C
(A)
Collector current
I
C
(A)
4
2002-11-20
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
