MP4305
r
th
– t
w
300
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
(1)
10
(°C/W)
(4)
100
r
th
Transient thermal resistance
30
(3)
(2)
3
1
0.3
0.001
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
Circuit board
(4) 4 devices operation
0.01
0.1
1
10
100
1000
Pulse width
t
w
(s)
Safe Operating Area
−20
−10
IC max (pulsed)*
−5
−3
10 ms*
1 ms*
100 µs*
10
P
T
– Ta
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
(W)
8
Total power dissipation
P
T
6
(4)
4
(3)
(2)
2 (1)
(A)
Collector current
I
C
−1
−0.5
−0.3
Circuit board
−0.1
−0.05
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
*: Single nonrepetitive pulse
Ta = 25°C
−0.03
Curves must be derated
linearly with increase in
temperature.
−0.01
−1
−3
−10
VCEO max
−30
−100
−300
Collector-emitter voltage V
CE
(V)
∆T
j
– P
T
200
(°C)
Junction temperature increase
∆T
j
160
(1)
120
(2)
Circuit board
(3)
(4)
80
Attached on a circuit board
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
1
2
3
4
5
40
0
0
Total power dissipation
P
T
(W)
5
2002-11-20
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
