欢迎访问ic37.com |
会员登录 免费注册
发布采购

X28VC256SI-55 参数 Datasheet PDF下载

X28VC256SI-55图片预览
型号: X28VC256SI-55
PDF下载: 下载PDF文件 查看货源
内容描述: 5伏,可变的字节E2PROM [5 Volt, Byte Alterable E2PROM]
分类和应用: 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 24 页 / 111 K
品牌: XICOR [ XICOR INC. ]
 浏览型号X28VC256SI-55的Datasheet PDF文件第1页浏览型号X28VC256SI-55的Datasheet PDF文件第2页浏览型号X28VC256SI-55的Datasheet PDF文件第4页浏览型号X28VC256SI-55的Datasheet PDF文件第5页浏览型号X28VC256SI-55的Datasheet PDF文件第6页浏览型号X28VC256SI-55的Datasheet PDF文件第7页浏览型号X28VC256SI-55的Datasheet PDF文件第8页浏览型号X28VC256SI-55的Datasheet PDF文件第9页  
X28VC256
DEVICE OPERATION
Read
Read operations are initiated by both
OE
and
CE
LOW.
The read operation is terminated by either
CE
or
OE
returning HIGH. This two line control architecture elimi-
nates bus contention in a system environment. The data
bus will be in a high impedance state when either
OE
or
CE
is HIGH.
Write
Write operations are initiated when both
CE
and
WE
are
LOW and
OE
is HIGH. The X28VC256 supports both a
CE
and
WE
controlled write cycle. That is, the address
is latched by the falling edge of either
CE
or
WE,
whichever occurs last. Similarly, the data is latched
internally by the rising edge of either
CE
or
WE,
whichever occurs first. A byte write operation, once
initiated, will automatically continue to completion, typi-
cally within 3ms.
Page Write Operation
The page write feature of the X28VC256 allows the
entire memory to be written in typically 0.8 seconds.
Page write allows up to one hundred twenty-eight bytes
of data to be consecutively written to the X28VC256
prior to the commencement of the internal programming
cycle. The host can fetch data from another device
within the system during a page write operation (change
the source address), but the page address (A
7
through
A
14
) for each subsequent valid write cycle to the part
during this operation must be the same as the initial
page address.
The page write mode can be initiated during any write
operation. Following the initial byte write cycle, the host
can write an additional one to one hundred twenty-
seven bytes in the same manner as the first byte was
written. Each successive byte load cycle, started by the
WE
HIGH to LOW transition, must begin within 100µs of
the falling edge of the preceding
WE.
If a subsequent
WE
HIGH to LOW transition is not detected within
100µs, the internal automatic programming cycle will
commence. There is no page write window limitation.
Effectively the page write window is infinitely wide, so
long as the host continues to access the device within
the byte load cycle time of 100µs.
Write Operation Status Bits
The X28VC256 provides the user two write operation
status bits. These can be used to optimize a system write
cycle time. The status bits are mapped onto the I/O bus as
shown in Figure 1.
Figure 1. Status Bit Assignment
I/O
DP
TB
5
4
3
2
1
0
RESERVED
TOGGLE BIT
DATA POLLING
3869 FHD F11
DATA
Polling (I/O
7
)
The X28VC256 features
DATA
Polling as a method to
indicate to the host system that the byte write or page
write cycle has completed.
DATA
Polling allows a simple
bit test operation to determine the status of the
X28VC256, eliminating additional interrupt inputs or
external hardware. During the internal programming
cycle, any attempt to read the last byte written will
produce the complement of that data on I/O
7
(i.e., write
data = 0xxx xxxx, read data = 1xxx xxxx). Once the
programming cycle is complete, I/O
7
will reflect true
data.
Toggle Bit (I/O
6
)
The X28VC256 also provides another method for deter-
mining when the internal write cycle is complete. During
the internal programming cycle I/O
6
will toggle from
HIGH to LOW and LOW to HIGH on subsequent at-
tempts to read the device. When the internal cycle is
complete the toggling will cease and the device will be
accessible for additional read and write operations.
3