ZVN4310A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Input Capacitance (2)
Common Source
Output Capacitance
(2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
SYMBOL MIN.
C
iss
C
oss
TYP.
MAX.
350
140
UNIT
pF
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
CONDITIONS.
C
rss
t
d(on)
t
r
t
d(off)
t
f
30
8
25
30
16
pF
ns
ns
ns
ns
V
DD
≈25V,
V
GEN
=10V, I
D
=3A
R
GS
=50Ω
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
Junction to Case
SYMBOL
R
th(j-amb)
R
th(j-case)
MAX.
150
50
UNIT
°C/W
°C/W
Max Power Dissipation - (Watts)
1.0
Thermal Resistance (°C/W)
150
t
1
D.C.
D=t
1
/t
P
0.75
100
t
P
D=0.6
Am
tt
en
bi
0.50
em
pe
tu
ra
50
D=0.2
D=0.1
0.25
re
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
D=0.05
Single Pulse
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-394
ZETEX [ ZETEX SEMICONDUCTORS ]
