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ZVN4310A 参数 Datasheet PDF下载

ZVN4310A图片预览
型号: ZVN4310A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型垂直DMOS FET [N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 55 K
品牌: ZETEX [ ZETEX SEMICONDUCTORS ]
 浏览型号ZVN4310A的Datasheet PDF文件第1页浏览型号ZVN4310A的Datasheet PDF文件第2页  
ZVN4310A
TYPICAL CHARACTERISTICS
R
DS(on)
-Drain Source On Resistance
(Ω)
V
GS=
20V 10V
12V 9V 8V
V
GS
=3V
10
4V
5V 6V 8V10V
7V
I
D
- Drain Current (Amps)
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
6V
1.0
5V
4V
3V
5
6
7
8
9
10
0.1
0.1
1
10
100
V
DS
- Drain Source
Voltage (Volts)
I
D-
Drain Current
(Amps)
Saturation Characteristics
On-resistance v drain current
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
5
g
fs
-Transconductance (S)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25
0
n-
ai
Dr
Gate
Thre
e
rc
ou
S
s
Re
is
e
nc
ta
R
n)
(o
DS
V
GS=
10V
I
D=
3.3A
4
3
2
1
0
0
2
4
6
8
10
V
DS=
10V
shold
Volta
ge V
V
GS=
V
DS
I
D=
1mA
GS(TH
)
25 50 75 100 125 150 175 200 225
12
14
16
18
20
T
j
-Junction Temperature (°C)
I
D(on)
- Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
Transconductance v drain current
16
V
GS
-Gate Source Voltage (Volts)
500
14
12
10
8
6
4
2
0
0
1
I
D=
3A
C-Capacitance (pF)
400
300
200
100
0
C
oss
C
rss
50
C
iss
V
DD
=
10V
20V
50V
100V
0
10
20
30
40
2
3
4
5
6
7
8
9
10 11 12
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-395