AOD409芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号AOD409的概述

芯片AOD409概述 AOD409是一种高性能的N沟道MOSFET，通常用于电源管理和开关应用。这款芯片以其优异的电气性能和紧凑的封装设计，广泛应用于各类电子设备中，特别是在要求高效率和快速开关的应用中。AOD409的制造工艺确保其具有低的导通电阻（RDS(on)）和较高的击穿电压（VDS），使得该器件能够在各种负载条件下可靠工作。芯片AOD409的详细参数 AOD409的主要技术参数包括： 1. 最大漏极-源极电压（VDS）：30V 2. 最大漏极电流（ID）：30A 3. 持续功率耗散（PD）：70W（在25°C时） 4. 导通电阻（RDS(on)）：0.025Ω（在10V栅极电压下） 5. 栅极-源极电压（VGS）：±20V 6. 热阻（θJA）：35°C/W 7. 封装类型：SO-8 8. 工作温度范围：-55°C至+150°C 这些参数使得AOD409在高频和高效的电源转换...

产品型号AOD409的Datasheet PDF文件预览

AOD409

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD409 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and low

gate resistance. With the excellent thermal resistance

of the DPAK package, this device is well suited for

high current load applications. Standard Product

AOD409 is Pb-free (meets ROHS & Sony 259

specifications). AOD409L is a Green Product

ordering option. AOD409 and AOD409L are

electrically identical.

V_DS(V) = -60V

I_D= -26A (V_GS= -10V)

R_DS(ON)< 40mΩ (V_GS= -10V) @ -20A

R_DS(ON)< 55mΩ (V_GS= -4.5V)

TO-252

D-PAK

Top View

Drain Connected to

Tab

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

-60

V_GS

Gate-Source Voltage

Continuous Drain

Current ^G

±20

-26

T_C=25°C

T_C=100°C

I_D

-18

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

-60

-26

134

T_C=25°C

P_D

Power Dissipation ^B

T_C=100°C

T_A=25°C

2.5

P_DSM

Power Dissipation ^A

T_A=70°C

1.6

T_J, T_STG

Junction and Storage Temperature Range

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

16.7

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Case ^C

Steady-State

R_θJC

1.9

2.5

Alpha & Omega Semiconductor, Ltd.

AOD409

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

STATIC PARAMETERS

BV_DSS

Drain-Source Breakdown Voltage

I_D=-250µA, V_GS=0V

-60

V_DS=-48V, V_GS=0V

-0.003

-1

-5

I_DSS

Zero Gate Voltage Drain Current

µA

T_J=55°C

I_GSS

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

V_DS=0V, V_GS=±20V

V_DS=V_GSI_D=-250µA

V_GS=-10V, V_DS=-5V

±100

-2.4

V_GS(th)

I_D(ON)

-1.2

-60

-1.9

V_GS=-10V, I_D=-20A

mΩ

R_DS(ON)

T_J=125°C

Static Drain-Source On-Resistance

V_GS=-4.5V, I_D=-20A

g_FS

V_SD

I_S

Forward Transconductance

Diode Forward Voltage

_DS=-5V, I_D=-20A

I_S=-1A,V_GS=0V

-0.73

-1

Maximum Body-Diode Continuous Current

-30

DYNAMIC PARAMETERS

C_iss

C_oss

C_rss

R_g

Input Capacitance

2977

241

153

3600

2.4

Ω

V_GS=0V, V_DS=-30V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V_GS=0V, V_DS=0V, f=1MHz

SWITCHING PARAMETERS

Q_g(10V)

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

22.2

Q_g(4.5V)

_GS=-10V, V_DS=-30V, I_D=-20A

Q_gs

Q_gd

t_D(on)

t_r

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

V_GS=-10V, V_DS=-30V, R_L=1.5Ω,

14.5

R_GEN=3Ω

t_D(off)

t_f

t_rr

I_F=-20A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_rr

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

Rev 3: June 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

-4.5V

-10V

-4V

V_DS=-5V

-6V

-5V

125°C

-3.5V

25°C

V_GS=-3V

-V_GS(Volts)

-V_DS(Volts)

Figure 2: Transfer Characteristics

Fig 1: On-Region Characteristics

V_GS=-10V

I_D=-20A

1.8

1.6

1.4

1.2

V_GS=-4.5V

I_D=-20A

V_GS=-10V

0.8

-I_D(A)

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

100

125

150

175

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

1.0E-06

I_D=-20A

125°C

25°C

0.0

0.2

0.4

0.6

-V_SD(Volts)

Figure 6: Body-Diode Characteristics

0.8

1.0

1.2

-V_GS(Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

4000

3600

3200

2800

2400

2000

1600

1200

800

V_DS=-30V

I_D=-20A

C_iss

C_oss

C_rss

400

-V_DS(Volts)

10 15 20 25 30 35 40 45 50

-Q_g(nC)

Figure 7: Gate-Charge Characteristics

Figure 8: Capacitance Characteristics

100.0

10.0

1.0

1000

800

600

400

200

10µs

100µs

T_J(Max)=175°C

T_A=25°C

R_DS(ON)

limited

1ms

10ms

T_J(Max)=175°C, T_A=25°C

0.1

0.0001

0.001

0.01

0.1

100

Pulse Width (s)

-V_DS(Volts)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

In descending order

D=T_on/T

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T_J,PK=T_C+P_DM.Z_θJC.R_θJC

R_θJC=2.5°C/W

0.1

P_D

T_on

Single Pulse

0.0001

0.01

0.00001

0.001

0.01

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

0.1

100

Alpha & Omega Semiconductor, Ltd.

AOD409

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

L ⋅ I_D

t_A=

BV −V_DD

T_A=25°C

100

125

150

175

0.00001

0.0001

Time in avalanche, t_A(s)

Figure 12: Single Pulse Avalanche capability

0.001

T_CASE(°C)

Figure 13: Power De-rating (Note B)

T_A=25°C

100

125

150

175

0.001

0.01

0.1

100

1000

T_CASE(°C)

Pulse Width (s)

Figure 14: Current De-rating (Note B)

Figure 15: Single Pulse Power Rating Junction-to-

Ambient (Note H)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=T_on/T

T_J,PK=T_A+P_DM.Z_θJA.R_θJA

R_θJA=50°C/W

0.1

0.01

P_D

Single Pulse

0.001

T_on

0.001

0.00001

0.0001

0.01

0.1

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

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AOD409产品参数

型号:	AOD409
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ALPHA & OMEGA SEMICONDUCTOR LTD
零件包装代码：	TO-252
包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	1.69
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (ID)：	26 A
最大漏源导通电阻：	0.055 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252
JESD-30 代码：	R-PSSO-G2
元件数量：	1
端子数量：	2
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL
最大脉冲漏极电流 (IDM)：	60 A
表面贴装：	YES
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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