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产品型号BAS116的概述

芯片BAS116的概述 BAS116是一款双通道传输和开关控制芯片，广泛应用于模拟信号的传输和开关控制。作为一种集成电路，BAS116能够在低电压下高效工作，适用性广泛，非常适合在便携式电子设备和无线通信设备中使用。其主要特性包括低导通电阻和较快的开关速度，这使得其在各类电子项目中都能够发挥良好的性能。 BAS116的设计构想是基于MOSFET技术，其可实现低功耗和高效率。很多电子设计师和工程师选择BAS116作为其音频和视频信号传输的解决方案，特别是在信号需要频繁切换的应用场合。该芯片通过其独特的电路设计，提供了一种可靠的方式来实现信号控制，确保信号在传输过程中的完整性。芯片BAS116的详细参数 BAS116的性能参数通常包括以下几个方面： - 漏源电压 (V_DS): 其漏源电压的最大值通常为60V。 - 漏电流 (I_D): 最大的漏电流可达到200mA。 - 导通电阻 (R...

产品型号BAS116的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D088

BAS116

Low-leakage diode

1999 May 26

Product speciﬁcation

Supersedes data of 1996 Mar 13

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS116

FEATURES

PINNING

• Plastic SMD package

DESCRIPTION

• Low leakage current: typ. 3 pA

• Switching time: typ. 0.8 µs

anode

not connected

cathode

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 85 V

handbook, 4 columns

• Repetitive peak forward current:

max. 500 mA.

n.c.

APPLICATION

• Low leakage current applications in

surface mounted circuits.

MAM106

Top view

DESCRIPTION

Marking code: JVp = made in Hong Kong; JVt = made in Malaysia.

Epitaxial medium-speed switching

diode with a low leakage current in a

small SOT23 plastic SMD package.

Fig.1 Simplified outline (SOT23) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_RRM

V_R

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

−

I_F

see Fig.2; note 1

215

500

I_FRM

I_FSM

non-repetitive peak forward current square wave; T_j= 25 °C prior to surge;

see Fig.4

t_p= 1 µs

t_p= 1 ms

t_p= 1 s

−

0.5

250

+150

150

P_tot

T_stg

T_j

total power dissipation

storage temperature

junction temperature

T_amb= 25 °C; note 1

°C

−65

−

Note

1. Device mounted on a FR4 printed-circuit board.

1999 May 26

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS116

ELECTRICAL CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

forward voltage

CONDITIONS

TYP.

MAX.

UNIT

V_F

see Fig.3

I_F= 1 mA

I_F= 10 mA

I_F= 50 mA

−

0.9

1.1

1.25

I_F= 150 mA

I_R

reverse current

see Fig.5

V_R= 75 V

0.003

µs

V_R= 75 V; T_j= 150 °C

f = 1 MHz; V_R= 0; see Fig.6

−

C_d

t_rr

diode capacitance

reverse recovery time

when switched from I_F= 10 mA to

I_R= 10 mA; R_L= 100 Ω;

0.8

measured at I_R= 1 mA; see Fig.7

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

thermal resistance from junction to tie-point

thermal resistance from junction to ambient note 1

CONDITIONS

VALUE

UNIT

K/W

R_{th j-tp}

R_{th j-a}

330

500

Note

1. Device mounted on a FR4 printed-circuit board.

1999 May 26

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS116

GRAPHICAL DATA

MLB752 - 1

MLB755

300

handbook, halfpage

(mA)

200

(1)

(2)

(3)

100

200

0.4

0.8

1.2

1.6

( C)

amb

(V)

(1) T_j= 150 °C; typical values.

(2) T_j= 25 °C; typical values.

Device mounted on a FR4 printed-circuit board.

(3) T_j= 25 °C; maximum values.

Fig.2 Maximum permissible continuous forward

current as a function of ambient temperature.

Fig.3 Forward current as a function of forward

voltage.

MBG704

handbook, full pagewidth

FSM

(A)

−1

(µs)

Based on square wave currents; T_j= 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1999 May 26

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS116

MLB754

MBG526

handbook, halfpage

(nA)

(1)

(pF)

(2)

100

150

200

(V)

( C)

V_R= 75 V.

f = 1 MHz; T_j= 25 °C.

Fig.5 Reverse current as a function of junction

temperature.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

handbook, full pagewidth

D.U.T.

10%

= 50 Ω

SAMPLING

OSCILLOSCOPE

R = 50 Ω

V = V

I x R

F S

(1)

90%

MGA881

input signal

output signal

Fig.7 Reverse recovery time test circuit and waveforms.

1999 May 26

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS116

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

1999 May 26

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS116

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1999 May 26

Philips Semiconductors – a worldwide company

Argentina: see South America

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Pakistan: see Singapore

Belgium: see The Netherlands

Brazil: see South America

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 68 9211, Fax. +359 2 68 9102

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Colombia: see South America

Czech Republic: see Austria

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,

Tel. +27 11 471 5401, Fax. +27 11 471 5398

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 93 301 6312, Fax. +34 93 301 4107

Hungary: see Austria

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,

ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Uruguay: see South America

Vietnam: see Singapore

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Middle East: see Italy

Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors,

Internet: http://www.semiconductors.philips.com

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

SCA65

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

115002/03/pp8

Date of release: 1999 May 26

Document order number: 9397 750 05879

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BAS116产品参数

型号:	BAS116
生命周期：	Contact Manufacturer
IHS 制造商：	ELECTRONIC DEVICES INC
零件包装代码：	SOT-23
包装说明：	R-PDSO-G3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.70
风险等级：	5.22
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
JESD-30 代码：	R-PDSO-G3
端子数量：	3
最大输出电流：	0.2 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
认证状态：	Not Qualified
最大重复峰值反向电压：	75 V
最大反向恢复时间：	3 µs
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
Base Number Matches：	1

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