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产品型号BC847BDW1T3G的概述

BC847BDW1T3G芯片概述 BC847BDW1T3G是一款NPN型小信号晶体管，广泛应用于低功耗放大和开关电路中。这款晶体管遵循国际电子技术标准，具有可靠的性能和优秀的温度稳定性，是现代电子设计中不可或缺的重要组件之一。BC847BDW1T3G的制造工艺基于硅材料，确保了其在各种电子设备中的高效能和耐用性。详细参数 BC847BDW1T3G的主要技术参数包括： 1. 最大集电极电压（Vce）: 45V 2. 最大集电极电流（Ic）: 100mA 3. 直流增益（hFE）: 100至800，对于特定的电流范围和工作条件。 4. 功耗（Ptot）: 300mW，比如在25°C时等。 5. 接触电阻（Rth）: 过热条件下，非常小以确保性能稳定。 6. 工作温度范围: -55°C至+150°C，能够适应各种极端环境。 7. 封装类型: SOT-23，一个流行的轻型封装形式，适合表面贴...

产品型号BC847BDW1T3G的Datasheet PDF文件预览

BC846BDW1T1G,

BC847BDW1T1G,

BC848CDW1T1G

Dual General Purpose

Transistors

http://onsemi.com

NPN Duals

(3)

(2)

(1)

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(4)

(5)

(6)

Compliant

MAXIMUM RATINGS

MARKING

DIAGRAM

Rating

Symbol BC846 BC847 BC848 Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

CBO

1x MG

SOT−363

CASE 419B

STYLE 1

6.0

100

6.0

100

5.0

100

EBO

Collector Current −

Continuous

mAdc

1x = Specific Device Code

= B, F, G, L

M = Date Code

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL CHARACTERISTICS

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Characteristic

Symbol

Max

Unit

Total Device Dissipation

Per Device

380

250

FR−5 Board (Note 1)

T = 25°C

Derate Above 25°C

3.0

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient

328

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 x 0.75 x 0.062 in

Semiconductor Components Industries, LLC, 2010

Publication Order Number:

July, 2010 − Rev. 7

BC846BDW1T1/D

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(BR)CEO

(I = 10 mA)

BC846 Series

BC847 Series

BC848 Series

−

Collector−Emitter Breakdown Voltage

(BR)CES

(BR)CBO

(BR)EBO

(I = 10 mA, V = 0)

BC846 Series

BC847 Series

BC848 Series

−

Collector−Base Breakdown Voltage

(I = 10 mA)

BC846 Series

BC847 Series

BC848 Series

−

Emitter−Base Breakdown Voltage

(I = 1.0 mA)

BC846 Series

BC847 Series

BC848 Series

6.0

5.0

−

Collector Cutoff Current (V = 30 V)

−

5.0

CBO

(V = 30 V, T = 150°C)

ON CHARACTERISTICS

DC Current Gain

−

(I = 10 mA, V = 5.0 V)

BC846B, BC847B,

BC847C, BC848C

−

150

270

−

(I = 2.0 mA, V = 5.0 V)

BC846B, BC847B,

BC847C, BC848C

200

420

290

520

450

800

Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)

CE(sat)

−

0.25

0.6

Collector−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)

Base−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)

BE(sat)

−

0.7

0.9

−

Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)

Base−Emitter Voltage (I = 2.0 mA, V = 5.0 V)

BE(on)

580

−

660

−

700

770

Base−Emitter Voltage (I = 10 mA, V = 5.0 V)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

100

−

MHz

(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)

Output Capacitance (V = 10 V, f = 1.0 MHz)

obo

4.5

Noise Figure

(I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)

−

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

TYPICAL CHARACTERISTICS − BC846BDW1T1G

600

500

400

300

200

100

600

= 10 V

= 5 V

500

400

300

200

100

150°C

25°C

150°C

25°C

−55°C

0.001

0.01

0.1

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 1. DC Current Gain at V_CE= 5 V

Figure 2. DC Current Gain at V_CE= 10 V

0.25

0.20

0.15

0.10

0.05

0.00

0.3

0.25

0.2

I /I = 10

I /I = 20

0.15

0.1

150°C

25°C

150°C

25°C

−55°C

0.05

−55°C

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 3. V_CE(sat)at I_C/I_B= 10

Figure 4. V_CE(sat)at I_C/I_B= 20

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20

I /I = 10

I /I = 20

−55°C

25°C

−55°C

25°C

150°C

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 5. V_BE(sat)at I_C/I_B= 10

Figure 6. V_BE(sat)at I_C/I_B= 20

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

TYPICAL CHARACTERISTICS − BC846BDW1T1G

1000

1.20

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20

= 10 V

= 5 V

T = 25°C

−55°C

25°C

100

150°C

0.0001

0.001

0.01

0.1

100

I , COLLECTOR CURRENT (A)

Figure 7. V_BE(on)at V_CE= 5 V

Figure 8. Current − Gain − Bandwidth Product

1.6

1.2

0.8

0.4

T = 25°C

I =

100 mA

10 mA

50 mA

20 mA

0.1

100

0.01

0.1

100

V , REVERSE VOLTAGE (V)

I , BASE CURRENT (mA)

Figure 9. Capacitances

Figure 10. Collector Saturation Region

−0.2

−0.6

−1

= 5 V

−1.4

−1.8

−2.2

−2.6

−3

, for V

−55°C to 150°C

0.1

100

I , BASE CURRENT (mA)

Figure 11. Base−Emitter Temperature Coefficient

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

TYPICAL CHARACTERISTICS − BC847BDW1T1G

600

500

400

300

200

100

600

= 10 V

= 5 V

150°C

500

400

300

200

100

25°C

−55°C

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 12. DC Current Gain at V_CE= 5 V

Figure 13. DC Current Gain at V_CE= 10 V

0.25

0.20

0.15

0.10

0.05

0.00

0.30

0.25

0.20

0.15

0.10

0.05

0.00

I /I = 10

I /I = 20

25°C

150°C

25°C

150°C

−55°C

0.01

−55°C

0.0001

0.001

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 14. V_CEat I_C/I_B= 10

Figure 15. V_CEat I_C/I_B= 20

1.20

1.00

0.80

0.60

0.40

0.20

0.00

1.20

1.00

0.80

0.60

0.40

0.20

0.00

I /I = 10

I /I = 20

C B

−55°C

25°C

−55°C

25°C

150°C

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 16. V_BE(sat)at I_C/I_B= 10

Figure 17. V_BE(sat)at I_C/I_B= 20

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

TYPICAL CHARACTERISTICS − BC847BDW1T1G

1000

1.20

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20

= 10 V

= 5 V

T = 25°C

−55°C

25°C

100

150°C

0.0001

0.001

0.01

0.1

100

I , COLLECTOR CURRENT (A)

Figure 18. V_BE(on)at V_CE= 5 V

Figure 19. Current − Gain − Bandwidth

Product

1.6

1.2

0.8

0.4

T = 25°C

10 mA

100 mA

50 mA

20 mA

0.1

100

0.01

0.1

100

V , REVERSE VOLTAGE (V)

I , BASE CURRENT (mA)

Figure 20. Capacitances

Figure 21. Collector Saturation Region

= 5 V

−0.2

−0.6

−1

−1.4

−1.8

−2.2

−2.6

−3

, for V

VB BE

−55°C to 150°C

0.1

100

I , BASE CURRENT (mA)

Figure 22. Base−Emitter Temperature Coefficient

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

TYPICAL CHARACTERISTICS − BC848CDW1T1G

1000

900

800

700

600

500

400

300

200

100

1000

= 5 V

150°C

= 10 V

150°C

900

800

700

600

500

400

300

200

100

25°C

−55°C

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 23. DC Current Gain at V_CE= 5 V

Figure 24. DC Current Gain at V_CE= 10 V

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

0.30

0.25

0.20

0.15

0.10

0.05

0.00

I /I = 10

I /I = 20

C B

150°C

25°C

−55°C

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 25. V_CEat I_C/I_B= 10

Figure 26. V_CEat I_C/I_B= 20

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I /I = 10

I /I = 20

C B

−55°C

25°C

−55°C

25°C

150°C

0.0001

0.001

0.01

0.1

0.0001

0.001

0.01

0.1

I , COLLECTOR CURRENT (A)

Figure 27. V_BE(sat)at I_C/I_B= 10

Figure 28. V_BE(sat)at I_C/I_B= 20

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

TYPICAL CHARACTERISTICS − BC848CDW1T1G

1000

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

= 5 V

= 10 V

T = 25°C

−55°C

25°C

100

150°C

0.0001

0.001

0.01

0.1

100

I , COLLECTOR CURRENT (A)

Figure 29. V_BE(on)at V_CE= 5 V

Figure 30. Current − Gain − Bandwidth

Product

1.6

1.2

0.8

0.4

T = 25°C

10 mA

20 mA

50 mA

100 mA

0.1

100

0.01

0.1

100

V , REVERSE VOLTAGE (V)

I , BASE CURRENT (mA)

Figure 31. Capacitances

Figure 32. Collector Saturation Region

= 5 V

−0.2

−0.6

−1

−1.4

−1.8

−2.2

−2.6

−3

, for V

VB BE

−55°C to 150°C

0.1

100

I , BASE CURRENT (mA)

Figure 33. Base−Emitter Temperature Coefficient

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

1.0

0.1

D = 0.5

0.2

0.1

0.05

0.02

(t) = r(t) R

qJA

= 3285C/W MAX

(pk)

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

− T = P

(t)

J(pk)

(pk) qJC

0.01

DUTY CYCLE, D = t /t

1 2

SINGLE PULSE

0.001

1.0

100

1.0ꢀk

10ꢀk

100ꢀk

1.0ꢀM

t, TIME (ms)

Figure 34. Thermal Response

-200

The safe operating area curves indicate I −V limits

1 s

3 ms

of the transistor that must be observed for reliable

operation. Collector load lines for specific circuits must

fall below the limits indicated by the applicable curve.

-100

-50

T = 25°C

The data of Figure 35 is based upon T

= 150°C; T

J(pk)

or T is variable depending upon conditions. Pulse

curves are valid for duty cycles to 10% provided T

≤

BC558

BC557

BC556

J(pk)

150°C. T

may be calculated from the data in

J(pk)

-10

Figure 34. At high case or ambient temperatures,

thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by the

secondary breakdown.

-5.0

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

-2.0

-1.0

-5.0

-10

-30 -45 -65 -100

, COLLECTOR-EMITTER VOLTAGE (V)

Figure 35. Active Region Safe Operating Area

ORDERING INFORMATION

Device

†

Markings

Package

Shipping

BC846BDW1T1G

SOT−363

(Pb−Free)

3000 / Tape & Reel

BC847BDW1T1G

BC847BDW1T3G

BC847CDW1T1G

BC848CDW1T1G

SOT−363

(Pb−Free)

3000 / Tape & Reel

10000 / Tape & Reel

3000 / Tape & Reel

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

PACKAGE DIMENSIONS

SC−88 (SC70−6/SOT−363)

CASE 419B−02

ISSUE W

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX MIN

0.80

INCHES

NOM MAX

1.10 0.031 0.037 0.043

0.10 0.000 0.002 0.004

0.008 REF

−E−

0.95

0.05

A1 0.00

0.20 REF

0.21

0.14

2.00

1.25

0.65 BSC

0.20

0.10

1.80

1.15

0.30 0.004 0.008 0.012

0.25 0.004 0.005 0.010

2.20 0.070 0.078 0.086

1.35 0.045 0.049 0.053

0.026 BSC

0.30 0.004 0.008 0.012

2.20 0.078 0.082 0.086

b 6 PL

0.2 (0.008)

0.10

2.00

2.10

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

inches

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,

affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury

or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an

Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

BC846BDW1T1/D

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BC847BDW1T3G相关文章

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BC847BDW1T3G产品参数

型号:	BC847BDW1T3G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
零件包装代码：	SC-88
包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6
制造商包装代码：	419B-02
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	0.84
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	45 V
配置：	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：	200
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	2
端子数量：	6
最高工作温度：	150 °C
最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.38 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

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