BDX54CG现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号BDX54CG的概述

芯片BDX54CG的概述 BDX54CG是一款具有优良性能的双极型晶体管，属于功率放大器系列，广泛应用于电源管理、电信设备和音频设备等领域。这种晶体管能够在较高的电压和电流下工作，能够满足各种工业和消费电子产品的需求。BDX54CG采用了先进的半导体制造技术，具有较小的功耗和较高的效率，因此在现代电子产品设计中得到了广泛的应用。 BDX54CG的主要特点是其高增益和较低的饱和电压，这使得其在推进当前电子设备性能方面具有显著的优势。该芯片的设计能够承受较高的反向电流，同时保持稳定性，确保长时间的可靠工作。此外，BDX54CG在电路设计中表现出很好的线性特性，这是其在音频放大器和其他应用中的重要优势。芯片BDX54CG的详细参数 BDX54CG的主要参数包括： - 最大集电极电压 (V_CE): 80 V - 最大集电极电流 (I_C): 15 A - 功耗 (P_tot): 65 W ...

产品型号BDX54CG的Datasheet PDF文件预览

BDX53B, BDX53C (NPN),

BDX54B, BDX54C (PNP)

Plastic Medium−Power

Complementary Silicon

Transistors

http://onsemi.com

These devices are designed for general−purpose amplifier and

low−speed switching applications.

DARLINGTON

8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLTS, 65 WATTS

Features

• High DC Current Gain −

= 2500 (Typ) @ I = 4.0 Adc

• Collector Emitter Sustaining Voltage − @ 100 mAdc

= 80 Vdc (Min) − BDX53B, 54B

= 100 Vdc (Min) − BDX53C, 54C

CEO(sus)

• Low Collector−Emitter Saturation Voltage −

= 2.0 Vdc (Max) @ I = 3.0 Adc

CE(sat)

= 4.0 Vdc (Max) @ I = 5.0 Adc

CE(sat)

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

TO−220AB

CASE 221A

MAXIMUM RATINGS

STYLE 1

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

Vdc

CEO

BDX53B, BDX54B

BDX53C, BDX54C

100

Collector−Base Voltage

Vdc

MARKING DIAGRAM

& PIN ASSIGNMENT

BDX53B, BDX54B

BDX53C, BDX54C

100

Emitter−Base Voltage

5.0

Vdc

Adc

Collector Current − Continuous

− Peak

8.0

Collector

Base Current

0.2

Adc

Total Device Dissipation @ T = 25°C

0.48

W/°C

Derate above 25°C

BDX5xyG

AY WW

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

°C

stg

THERMAL CHARACTERISTICS

Base

Emitter

Characteristic

Symbol

Max

Unit

°C/W

Collector

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

1.92

BDX5xy = Device Code

x = 3 or 4

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

y = B or C

= Assembly Location

= Year

= Work Week

= Pb−Free Package

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 12

BDX53B/D

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

4.0 80

3.0 60

2.0 40

1.0 20

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

Vdc

CEO(sus)

(I = 100 mAdc, I = 0)

BDX53B, BDX54B

BDX53C, BDX54C

100

−

Collector Cutoff Current

(V = 40 Vdc, I = 0)

mAdc

CEO

CBO

BDX53B, BDX54B

BDX53C, BDX54C

−

0.5

(V = 50 Vdc, I = 0)

Collector Cutoff Current

(V = 80 Vdc, I = 0)

BDX53B, BDX54B

BDX53C, BDX54C

−

0.2

(V = 100 Vdc, I = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

750

−

(I = 3.0 Adc, V = 3.0 Vdc)

Collector−Emitter Saturation Voltage

(I = 3.0 Adc, I = 12 mAdc)

−

2.0

4.0

Vdc

CE(sat)

BE(sat)

Base−Emitter Saturation Voltage

(I = 3.0 Adc, I = 12 mA)

−

2.5

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

4.0

−

(I = 3.0 Adc, V = 4.0 Vdc, f = 1.0 MHz)

Output Capacitance

(V = 10 Vdc, I = 0, f = 0.1 MHz)

BDX53B, 53C

BDX54B, 54C

−

300

200

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

http://onsemi.com

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

−30 V

5.0

AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS

D MUST BE FAST RECOVERY TYPES, e.g.:

3.0

2.0

ꢂ1N5825 USED ABOVE I [ 100 mA

ꢂMSD6100 USED BELOW I [ 100 mA

SCOPE

TUT

1.0

0.7

0.5

APPROX

+8.0 V

[ 8.0 k

[ 120

0.3

0.2

= 30 V

I /I = 250

+4.0 V

C B

APPROX

−12 V

25 ms

0.1

0.07

0.05

= I

B1 B2

for t and t , D is disconnected

T = 25°C

t @ V

= 0 V

BE(off)

and V = 0

t , t v 10 ns

DUTY CYCLE = 1.0%

For NPN test circuit reverse all polarities

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

I , COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Switching Times

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

0.1

(pk)

0.05

0.02

0.1

0.07

0.05

(t) = r(t) R

= 1.92°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

SINGLE

PULSE

0.03

0.02

SINGLE PULSE

0.01

− T = P

(t)

J(pk)

(pk)

DUTY CYCLE, D = t /t

1 2

0.01

0.01 0.02 0.03 0.05

0.1

0.2 0.3 0.5

1.0

2.0 3.0 5.0

20 30

100

200 300 500

1000

t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

There are two limitations on the power handling ability of

a transistor average junction temperature and second

100 ms

500 ms

breakdown. Safe operating area curves indicate I −V

5.0

5.0 ms

1.0 ms

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

2.0

1.0

0.5

T = 150°C

BONDING WIRE LIMITED

THERMALLY LIMITED @ T = 25°C

ꢂ(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

The data of Figure 5 is based on T

= 150°C; T is

J(pk)

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided

0.2

0.1

CURVES APPLY BELOW RATED V

CEO

t 150°C. T

may be calculated from the data in

J(pk)

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

0.05

BDX53B, BDX54B

BDX53C, BDX54C

0.02

1.0

2.0 3.0

5.0 7.0 10

20 30

50 70 100

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. Active−Region Safe Operating Area

http://onsemi.com

−55°C

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

10,000

5000

300

200

T = + 25°C

3000

2000

1000

500

100

300

200

T = 25°C

= 3.0 V

= 3.0 A

100

PNP

NPN

PNP

NPN

1.0

0.1

2.0

5.0 10

50 100 200

500 1000

0.2

0.5

1.0 2.0

5.0 10

50 100

V , REVERSE VOLTAGE (VOLTS)

f, FREQUENCY (kHz)

Figure 6. Small-Signal Current Gain

Figure 7. Capacitance

NPN

PNP

BDX53B, 53C

BDX54B, 54C

20,000

10,000

5000

20,000

10,000

= 4.0 V

T = 150°C

5000

T = 150°C

3000

2000

3000

2000

25°C

1000

500

1000

500

−ꢃ55°C

300

200

300

200

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

I , COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

3.0

2.6

2.2

1.8

1.4

1.0

3.0

T = 25°C

2.6

2.2

1.8

1.4

1.0

= 2.0 A

4.0 A

6.0 A

= 2.0 A

4.0 A

6.0 A

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30

I , BASE CURRENT (mA)

Figure 9. Collector Saturation Region

http://onsemi.com

+ꢃ3.0

+ꢃ2.0

+ꢃ1.0

−

1.0

2.0

−

3.0

4.0

−ꢃ3.0

−ꢃ4.0

−

5.0

−ꢃ5.0

−

.6 −

−

+ꢃ0.2 +ꢃ0.4

+ꢃ0.6 +ꢃ0.8 +ꢃ1.0 +ꢃ1.2 + 1.4

5.0

4.0

3.0

2.0

1.0

+ꢃ5.0

+ꢃ4.0

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

3.0

2.5

2.0

T = 25°C

2.5

2.0

@ I /I = 250

C B

BE(sat)

@ V = 4.0 V

1.5

1.0

0.5

1.5

1.0

0.5

@ V = 4.0 V

@ I /I = 250

C B

BE(sat)

@ I /I = 250

C B

CE(sat)

@ I /I = 250

C B

CE(sat)

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

I , COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

NPN

BDX53B, BDX53C

PNP

BDX54B, BDX54C

*I /I v h

C B

*I /I v h

C B

FE/3

25°C to 150°C

−ꢃ55°C to 25°C

25°C to 150°C

−ꢃ55°C to 25°C

−ꢃ1.0

−ꢃ2.0

*q for V

VC CE(sat)

CE(sat)

25°C to 150°C

for V

VB BE

−ꢃ55 to 150°C

5.0 7.0 10

−ꢃ55 to 150°C

2.0 3.0 5.0 7.0 10

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

0.1

0.2 0.3

0.5 0.7 1.0

I , COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

REVERSE

= 30 V

FORWARD

REVERSE

= 30 V

ꢃ 1

T = 150°C

100°C

25°C

100°C

25°C

ꢃ 1

+ꢃ0.6 +ꢃ0.4 +ꢃ0.2

−ꢃ0.2 −ꢃ0.4 −ꢃ0.6 −ꢃ0.8 −ꢃ1.0 −ꢃ1.2 −ꢃ1.4

, BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut−Off Region

http://onsemi.com

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

NPN

BDX53B

BDX53C

COLLECTOR

PNP

BDX54B

BDX54C

COLLECTOR

BASE

[ 8.0 k

[ 120

[ 8.0 k

[ 120

EMITTER

Figure 13. Darlington Schematic

ORDERING INFORMATION

†

Device

BDX53B

Package

Shipping

TO−220

50 Units / Rail

BDX53BG

TO−220

(Pb−Free)

BDX53C

TO−220

BDX53CG

TO−220

(Pb−Free)

BDX54B

TO−220

BDX54BG

TO−220

(Pb−Free)

BDX54C

TO−220

BDX54CG

TO−220

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

−T−

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

−−−

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

−−−

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

−−−

−−− 0.080

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

BDX53B/D

http://onsemi.com

BDX54CG相关文章

配单直通车

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BDX54CG产品参数

型号:	BDX54CG
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
零件包装代码：	TO-220AB
包装说明：	LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN
针数：	3
制造商包装代码：	221A-09
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
Factory Lead Time：	1 week
风险等级：	0.77
其他特性：	LEADFORM OPTIONS ARE AVAILABLE
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	100 V
配置：	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：	750
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	260
极性/信道类型：	PNP
最大功率耗散 (Abs)：	60 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	20 MHz
Base Number Matches：	1

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产品型号BDX54CG的概述

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