欢迎访问ic37.com |
会员登录 免费注册
会员中心
企业资讯   人才招聘  
电子百科

电子百科

Datasheet下载 IC品牌 缩略语 技术文章 IC型号

产品导航

ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789
产品
  • 产品
  • PDF

    • 最近搜索

    热门搜索

    搜索
    发布采购
    所在地： 型号： 精确
    • 批量询价
    •  
    • 供应商
    • 型号
    • 数量
    • 厂商
    • 封装
    • 批号
    • 交易说明
    • 询价
    •  

    • 北京元坤伟业科技有限公司

           该会员已使用本站17年以上

    • BFG19S+E6237
    • 数量-
    • 厂家-
    • 封装-
    • 批号-
    • -
    • QQ:857273081QQ：857273081 复制
      QQ:1594462451QQ：1594462451 复制
    • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
    更多

    对不起，未查询到“BFG19S+E6237”产品信息。
    您可咨询上面配单直通车帮您一起找

    建议您：

    1、缩短查询关键词重新搜索；

    2、你可以发布采购信息，让供应商主动联系您；

    3、联系我站客服，帮助您查询产品信息，在线客服QQ：1372232724


    返回首页快速发布采购

    产品型号BFG19SE6327的Datasheet PDF文件预览

    BFG19S  
    NPN Silicon RF Transistor*  
    • For low noise, low distortion broadband  
    amplifiers in antenna and telecommunication  
    systems up to 1.5 GHz at collector currents  
    from 10 mA to 70 mA  
    4
    3
    2
    1
    1)  
    • Pb-free (RoHS compliant) package  
    • Qualified according AEC Q101  
    * Short term description  
    ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
    Type  
    BFG19S  
    Marking  
    BFG19S  
    Pin Configuration  
    1 = E 2 = B 3 = E 4 = C -  
    Package  
    SOT223  
    -
    Maximum Ratings  
    Parameter  
    Symbol  
    Value  
    Unit  
    15  
    20  
    20  
    3
    210  
    21  
    1
    V
    Collector-emitter voltage  
    Collector-emitter voltage  
    Collector-base voltage  
    Emitter-base voltage  
    Collector current  
    V
    V
    V
    V
    CEO  
    CES  
    CBO  
    EBO  
    mA  
    W
    I
    I
    C
    Base current  
    B
    2)  
    Total power dissipation  
    P
    tot  
    T ≤ 75°C  
    S
    150  
    -65 ... 150  
    -65 ... 150  
    °C  
    Junction temperature  
    Ambient temperature  
    Storage temperature  
    T
    T
    T
    j
    A
    stg  
    Thermal Resistance  
    Parameter  
    Junction - soldering point  
    Symbol  
    Value  
    ≤ 75  
    Unit  
    K/W  
    3)  
    R
    thJS  
    1Pb-containing package may be available upon special request  
    2T is measured on the collector lead at the soldering point to the pcb  
    S
    3For calculation of R  
    please refer to Application Note Thermal Resistance  
    thJA  
    2008-07-10  
    1
    BFG19S  
    Electrical Characteristics at T = 25°C, unless otherwise specified  
    A
    Parameter  
    Symbol  
    Values  
    Unit  
    min.  
    typ. max.  
    DC Characteristics  
    15  
    -
    -
    -
    V
    Collector-emitter breakdown voltage  
    V
    (BR)CEO  
    I = 1 mA, I = 0  
    C
    B
    -
    100 µA  
    100 nA  
    Collector-emitter cutoff current  
    = 20 V, V = 0  
    I
    CES  
    V
    CE  
    BE  
    -
    -
    -
    Collector-base cutoff current  
    = 10 V, I = 0  
    I
    CBO  
    V
    CB  
    E
    -
    10  
    µA  
    -
    Emitter-base cutoff current  
    = 2 V, I = 0  
    I
    EBO  
    V
    EB  
    C
    70  
    100  
    140  
    DC current gain-  
    I = 70 mA, V = 8 V, pulse measured  
    h
    FE  
    C
    CE  
    2008-07-10  
    2
    BFG19S  
    Electrical Characteristics at T = 25°C, unless otherwise specified  
    A
    Parameter  
    Symbol  
    Values  
    typ. max.  
    Unit  
    min.  
    AC Characteristics (verified by random sampling)  
    Transition frequency  
    4
    5.5  
    0.8  
    -
    GHz  
    f
    T
    I = 70 mA, V = 8 V, f = 500 MHz  
    C
    CE  
    -
    -
    -
    1.1 pF  
    Collector-base capacitance  
    = 10 V, f = 1 MHz, V = 0 ,  
    C
    C
    C
    F
    cb  
    ce  
    eb  
    V
    CB  
    BE  
    emitter grounded  
    0.4  
    4.1  
    -
    Collector emitter capacitance  
    V
    = 10 V, f = 1 MHz, V = 0 ,  
    CE  
    BE  
    base grounded  
    -
    Emitter-base capacitance  
    V
    = 0.5 V, f = 1 MHz, V = 0 ,  
    CB  
    EB  
    collector grounded  
    dB  
    Noise figure  
    I = 20 mA, V = 8 V, Z = Z  
    ,
    C
    CE  
    S
    Sopt  
    f = 900 MHz  
    f = 1.8 GHz  
    -
    -
    2
    3
    -
    -
    1)  
    Power gain, maximum available  
    G
    ma  
    I = 70 mA, V = 8 V, Z = Z  
    Z = Z  
    ,
    C
    CE  
    S
    Sopt, L  
    Lopt  
    f = 900 MHz  
    f = 1.8 GHz  
    -
    -
    14  
    8.5  
    -
    -
    2
    Transducer gain  
    |S  
    |
    dB  
    21e  
    I = 30 mA, V = 8 V, Z = Z = 50Ω,  
    C
    CE  
    S
    L
    f = 900 MHz  
    f = 1.8 GHz  
    -
    -
    11  
    5.5  
    -
    -
    Third order intercept point at output  
    = 8 V, I = 70 mA, f = 900 MHz,  
    IP  
    -
    32  
    -
    dBm  
    3
    V
    CE  
    C
    Z = Z = 50Ω  
    S
    L
    2
    1/2  
    1G  
    = |S /S | (k-(k -1)  
    )
    ma  
    21 12  
    2008-07-10  
    3
    BFG19S  
    Total power dissipation P = ƒ(T )  
    Permissible Pulse Load R  
    = ƒ(t )  
    tot  
    S
    thJS  
    p
    10 2  
    1200  
    mW  
    1000  
    900  
    800  
    700  
    600  
    500  
    400  
    300  
    200  
    100  
    0
    K/W  
    10 1  
    0.5  
    0.2  
    0.1  
    0.05  
    0.02  
    0.01  
    0.005  
    D = 0  
    10 0  
    10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
    10 0  
    °C  
    s
    0
    20  
    40  
    60  
    80  
    100 120  
    150  
    T
    t
    p
    S
    Permissible Pulse Load  
    P
    /P  
    = ƒ(t )  
    totmax totDC  
    p
    10 2  
    -
    D = 0  
    0.005  
    0.01  
    0.02  
    0.05  
    0.1  
    10 1  
    0.2  
    0.5  
    10 0  
    10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
    10 0  
    s
    t
    p
    2008-07-10  
    4
    Package SOT223  
    BFG19S  
    Package Outline  
    0.1  
    1.6  
    0.2  
    6.5  
    A
    0.1  
    0.1 MAX.  
    3
    B
    4
    3
    1
    2
    2.3  
    0.1  
    0.7  
    4.6  
    0...10˚  
    M
    0.25  
    A
    M
    0.25  
    B
    Foot Print  
    3.5  
    1.2 1.1  
    Marking Layout (Example)  
    Manufacturer  
    2005, 24 CW  
    Date code (YYWW)  
    BCP52-16  
    Type code  
    Pin 1  
    Packing  
    Reel ø180 mm = 1.000 Pieces/Reel  
    Reel ø330 mm = 4.000 Pieces/Reel  
    0.3 MAX.  
    8
    1.75  
    6.8  
    Pin 1  
    2008-07-10  
    5
    BFG19S  
    Edition 2006-02-01  
    Published by  
    Infineon Technologies AG  
    81726 München, Germany  
    © Infineon Technologies AG 2007.  
    All Rights Reserved.  
    Attention please!  
    The information given in this dokument shall in no event be regarded as a guarantee  
    of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
    examples or hints given herein, any typical values stated herein and/or any information  
    regarding the application of the device, Infineon Technologies hereby disclaims any  
    and all warranties and liabilities of any kind, including without limitation warranties of  
    non-infringement of intellectual property rights of any third party.  
    Information  
    For further information on technology, delivery terms and conditions and prices  
    please contact your nearest Infineon Technologies Office (www.infineon.com).  
    Warnings  
    Due to technical requirements components may contain dangerous substances.  
    For information on the types in question please contact your nearest  
    Infineon Technologies Office.  
    Infineon Technologies Components may only be used in life-support devices or  
    systems with the express written approval of Infineon Technologies, if a failure of  
    such components can reasonably be expected to cause the failure of that  
    life-support device or system, or to affect the safety or effectiveness of that  
    device or system.  
    Life support devices or systems are intended to be implanted in the human body,  
    or to support and/or maintain and sustain and/or protect human life. If they fail,  
    it is reasonable to assume that the health of the user or other persons  
    may be endangered.  
    2008-07-10  
    6
    配单直通车
    BFG19S-E6433产品参数
    型号:BFG19S-E6433
    是否Rohs认证： 符合
    生命周期：Active
    Reach Compliance Code：compliant
    风险等级：5.61
    最大集电极电流 (IC)：0.21 A
    配置：Single
    最小直流电流增益 (hFE)：70
    最高工作温度：150 °C
    极性/信道类型：NPN
    最大功率耗散 (Abs)：1 W
    子类别：Other Transistors
    表面贴装：YES
    标称过渡频率 (fT)：4000 MHz
    Base Number Matches：1
    •  
    • 供货商
    • 型号 *
    • 数量*
    • 厂商
    • 封装
    • 批号
    • 交易说明
    • 询价
  • 免费注册 忘记密码
    • 批量询价选中的记录已选中0条,每次最多15条。

    IC37:专业IC行业平台

    专业IC领域供求交易平台:提供全面的IC Datasheet资料和资讯，Datasheet 1000万数据，IC品牌1000多家。

    网站导航 Datasheet资料库 电子术语 电子百科
    服务中心 常见问题 委托交易 会员服务
    关于我们 公司简介 联系我们 免责申明

    产品索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

    深圳网络警察报警平台 公共信息安全网络监察 经营性网站备案信息 不良信息举报中心 工商网监电子标识 全国公安机关备案
    服务电话： 0755-32882616 0755-32882606 0755-32882608 0755-32882607 值班和投诉电话：13715251531 ©2004-2025 IC37网 版权所有：ic37.com 版权申明 公网安备44030402000606 粤ICP备13051289号-6
     复制成功！