BFP420芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号BFP420的概述

芯片BFP420的概述 BFP420是一款广泛应用于射频（RF）和微波应用的双极型晶体管（BJT），特别适用于高频信号的放大和开关电路。作为一种NPN结构的晶体管，BFP420因其卓越的性能特征而成为电子设计中的热门选择。其设计与制造结合了现代半导体技术，使其在频率响应、增益和电流处理能力上都有很好的表现。该器件特别适合用于手机基站、无线局域网（WLAN）、卫星通信等应用，可用于信号放大、混频和混合信号应用。BFP420在这些应用中展现了出色的性能和可靠性，因此很多电子设计工程师将其纳入设计方案。芯片BFP420的详细参数 BFP420的详细参数涉及多个方面，包括电气特性、热特性和机械特性。以下列出了一些关键参数，供设计工程师参考。 1. 基本参数 - 类型：NPN - 封装形式：SOT-23 - 工作温度范围：-55°C 至 +150°C - 最大功耗...

产品型号BFP420的Datasheet PDF文件预览

SIEGET 25

BFP 420

NPN Silicon RF Transistor

• For high gain low noise amplifiers

• For oscillators up to 10 GHz

• Noise figure F = 1.05 dB at 1.8 GHz

outstanding G = 20 dB at 1.8 GHz

• Transition frequency f = 25 GHz

• Gold metalization for high reliability

• SIEGET 25 - Line

VPS05605

Siemens Grounded Emitter Transistor

25 GHz f - Line

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration

Package

BFP 420 AMs

Q62702-F1591

1 = B

2 = E

3 = C

4 = E

SOT-343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

4.5

CEO

CBO

EBO

1.5

Base current

160

150

Total power dissipation, T ≤ 107 °C

tot

Junction temperature

Ambient temperature

°C

-65 ...+150

Storage temperature

Thermal Resistance

stg

Junction - soldering point

K/W

≤ 270

thJS

1) TS is measured on the collector lead at the soldering point to the pcb

Semiconductor Group

Jul-14-1998

1998-11-01

Semiconductor Group

BFP 420

Electrical Characteristics at T = 25°C, unless otherwise specified.

Parameter

Symbol

Values

typ. max.

Unit

min.

DC characteristics

4.5

6.5

Collector-emitter breakdown voltage

(BR)CEO

I = 1 mA, I = 0

200 nA

Collector-base cutoff current

= 5 V, I = 0

CBO

µA

Emitter-base cutoff current

= 1.5 V, I = 0

EBO

150

DC current gain

I = 20 mA, V = 4 V

AC characteristics

GHz

Transition frequency

I = 30 mA, V = 3 V, f = 2 GHz

0.15

0.41

0.55

1.05

0.24 pF

Collector-base capacitance

= 2 V, f = 1 MHz

Collector-emitter capacitance

= 2 V, f = 1 MHz

Emitter-base capacitance

= 0.5 V, f = 1 MHz

1.4 dB

Noise figure

I = 5 mA, V = 2 V, Z = Z

Sopt

f = 1.8 GHz

Power gain

I = 20 mA, V = 2 V, Z = Z

, Z = Z

Lopt

Sopt

f = 1.8 GHz

Insertion power gain

I = 20 mA, V = 2 V, f = 1.8 GHz,

|S |

Z = Z = 50Ω

dBm

Third order intersept point

I = 20 mA, V = 2 V, Z =Z

, Z =Z

Sopt

Lopt

f = 1.8 GHz

1dB Compression point

I = 20 mA, V = 2 V, f = 1.8 GHz,

-1dB

Z =Z

, Z =Z

L Lopt

Sopt

1) G

= |S / S

21 12

Semiconductor Group

Jul-14-1998

1998-11-01

BFP 420

Common Emitter S-Parameters

ANG

GHz

MAG

= 2V, I = 20mA

0.01

0.1

0.5

0.543

-2.5

36.88

35.4

22.87

13.46

6.93

4.59

3.339

2.15

1.46

1.2

178.1

164.4

120.8

96.3

0.0009

0.0075

0.0272

0.0398

0.062

0.09

0.115

0.156

0.172

0.174

0.172

95.8

79.3

58.7

55.2

53.5

48.6

40.5

25.3

5.4

0.96

-0.6

-12.3

-45.2

-60.3

-77.1

-96.7

-144.5

144.1

101.3

86.1

0.538

0.448

0.417

0.437

0.472

0.53

0.617

0.73

0.788

0.82

-25.1

-99.3

-143.6

176.2

152.8

133.3

109.1

82.5

0.946

0.633

0.399

0.227

0.134

0.109

0.136

0.229

0.319

0.405

71.5

54.4

38.9

12.9

-16.8

-30.4

-39.5

72.6

-5

-11.3

78.6

Common Emitter Noise Parameters

2 2)

|S |

min

opt

50Ω

GHz

MAG

ANG

Ω

= 2V, I = 5mA

0.9

1.8

2.4

0.9

1.05

1.25

1.38

1.55

1.75

2.2

20.5

15.2

12.1

10.3

8.6

0.19

0.11

0.19

0.28

0.37

0.44

8.7

7.5

6.5

0.17

0.15

0.14

0.13

0.14

0.2

1.02

1.11

1.32

1.48

1.83

2.2

20.3

15.8

13.5

11.6

9.1

116

165

-155

-130

-117

5.3

6.4

0.3

3.3

1) Input matched for minimum noise figure, output for maximum gain

2) Z = Z = 50Ω

S L

For more and detailed S- and Noise-parameters please contact your local Siemens

distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet:

http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group

Jul-14-1998

1998-11-01

Semiconductor Group

BFP 420

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :

Transistor Chip Data

IS =

0.20045

28.383

2.0518

19.705

1.1724

8.5757

1.8063

6.7661

BF =

72.534

0.48731

7.8287

0.69141

3.4849

0.31111

0.8051

0.42199

NF =

1.2432

19.049

1.3325

VAF =

NE =

IKF =

BR =

IKR =

RB =

ISE =

NR =

ISC =

IRB =

RC =

VAR =

NC =

RBM =

CJE =

TF =

0.019237

0.72983

0.10105

0.46576

0.23794

234.53

Ω

RE =

Ω

VJE =

XTF =

PTF =

MJC =

CJS =

XTB =

FC =

MJE =

VTF =

CJC =

ITF =

VJC =

TR =

deg

0.81969

2.3249

0.30232

XCJC = 0.3

VJS =

EG =

TNOM

0.75

MJS =

XTI =

1.11

300

0.73234

C’-E’-Diode Data (Berkley-SPICE 2G.6 Syntax) :

IS = 3.5 fA N = 1.02

RS =

Ω

All parameters are ready to use, no scalling is necessary

Package Equivalent Circuit:

L =

0.47

0.53

0.23

0.05

0.56

0.58

136

6.9

C_CB

L =

L _BO

L _BI

L _CI

L _CO

B’

Transistor

Chip

C’

C’-E’-

Diode

E’

L =

C_BE

C_CE

L _EI

L _EO

134

EHA07389

Valid up to 6GHz

The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalentcircuit,

both leads are combined in one electrical connection.

Extracted on behalf of SIEMENS Small Signal Semiconductors by:

Institut für Mobil-und Satellitentechnik (IMST)

1996 SIEMENS AG

For examples and ready to use parameters please contact your local Siemens distributor or salesoffice to

obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group

Jul-14-1998

1998-11-01

Semiconductor Group

BFP 420

For non-linear simulation:

• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.

• If you need simulation of thereverse characteristics, add the diode with the

C’-E’- diode data between collector and emitter.

• Simulation of package is not necessary for frequenties < 100MHz.

For higher frequencies add the wiring of package equivalent circuit around the

non-linear transistor and diode model.

Note:

• This transistor is constructed in a common emitter configuration. This feature causes

an additional reverse biased diode between emitter and collector, which does not

effect normal operation.

EHA07307

Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

• Higher gain because of lower emitter inductance.

• Power is dissipated via the grounded emitter leads, because the chip is mounted

on copper emitter leadframe.

Please note, that the broadest lead is the emitter lead.

The AC characteristics are verified by random sampling.

Semiconductor Group

Jul-14-1998

1998-11-01

Semiconductor Group

BFP 420

Total power dissipation P = f (T *, T )

Transition frequency f = f (I )

tot

* Package mounted on epoxy

f = 2 GHz

= parameter in V

200

GHz

2 to 4

1.5

160

tot

140

120

100

0.75

0.5

°C

100 120

150

T ,T

Permissible Pulse Load

Permissible Pulse Load R

= f (t )

thJS

= f (t )

totmax totDC

10 ³

10 ¹

max

/ P

K/W

thJS

D = 0

0.005

0.01

0.02

0.05

0.1

10 ²

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

0.2

0.5

10 ¹

10 ⁰

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-2

10 ⁰

Semiconductor Group

Jul-14-1998

1998-11-01

BFP 420

Power gain G , G , |S | = f ( f )

Power gain G , G = f (I )

ma ms C

= 2V, I = 20 mA

= 2V

f = parameter in GHz

0.9

1.8

2.4

GHz

0.0

1.0

2.0

3.0

4.0

6.0

12 16 20 24 28 32

Power gain G , G = f (V )

Collector-base capacitance C = f (V )

I = 20 mA

= 0, f = 1MHz

f = parameter in GHz

0.30

0.9

1.8

0.20

0.15

0.10

0.05

0.00

2.4

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

4.5

Semiconductor Group

Jul-14-1998

1998-11-01

BFP 420

Noise figure F = f (I )

= 2 V, Z = Z

= 2 V, f = 1.8 GHz

Sopt

4.0

3.0

2.5

2.0

1.5

1.0

0.5

0.0

2.0

1.5

1.0

0.5

0.0

ZS = 50 Ohm

ZS = ZSopt

f = 6 GHz

f = 5 GHz

f = 4 GHz

f = 3 GHz

f = 2.4 GHz

f = 1.8 GHz

f = 0.9 GHz

12 16 20 24 28 32

12 16 20 24 28

Source impedance for min.

Noise figure F = f ( f )

Noise Figure versus Frequency

= 2 V, Z = Z

Sopt

= 2 V, I = 5 mA / 20 mA

3.0

+j50

+j25

+j100

+j10

2.0

1.5

1.0

0.5

0.0

2.4GHz

1.8GHz

3GHz

0.9GHz

100

0.45GHz

4GHz

5GHz

-j10

IC = 20 mA

IC = 5 mA

6GHz

-j100

-j25

-j50

GHz

0.0

1.0

2.0

3.0

4.0

6.0

Semiconductor Group

Jul-14-1998

1998-11-01

BFP420相关产品

BFP420(AMS)BFP420,E6327 BFP420,H6327 BFP420-E6327 BFP420/BFP420/AM BFP420/AMs BFP420E BFP420E-6327 BFP420E-6433 BFP420E-6700(SWY)BFP420E-6740 BFP420E6327

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BFP420产品参数

型号:	BFP420
生命周期：	Transferred
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.25
其他特性：	HIGH RELIABILITY, LOW NOISE
外壳连接：	EMITTER
最大集电极电流 (IC)：	0.035 A
基于收集器的最大容量：	0.24 pF
集电极-发射极最大电压：	4.5 V
配置：	SINGLE
最高频带：	L BAND
JESD-30 代码：	R-PDSO-G4
元件数量：	1
端子数量：	4
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	NPN
最小功率增益 (Gp)：	20 dB
认证状态：	Not Qualified
表面贴装：	YES
端子形式：	GULL WING
端子位置：	DUAL
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	25000 MHz
Base Number Matches：	1

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产品型号BFP420的概述

产品型号BFP420的Datasheet PDF文件预览

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