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产品型号BLF178XR的概述

芯片BLF178XR的概述 BLF178XR是一款高效率的功率放大器,主要应用于广泛的RF(射频)电路中。该芯片由NXP Semiconductors(前身为飞利浦半导体)制造,专为各种无线通信系统和广播设备设计。凭借其卓越的线性度和宽频率范围,BLF178XR在设计高性能射频发射机时具有独特的技术优势。 BLF178XR被广泛用于移动通信、卫星通信以及其他基于射频的应用,其高输出功率和低失真特性使其在各种商业及工业场合都得到了广泛的认可。典型的工作频率范围在300MHz到1GHz之间,这使得该芯片在短波、超短波及微波频段均可发挥优异的性能。 芯片BLF178XR的详细参数 BLF178XR的技术参数如下: - 工作频率:300 MHz至1 GHz - 输出功率:在10MHz频率下能够提供高达50W的输出功率 - 增益:高达20dB的电压增益 - 扭曲率:具备优越的线性度,典型的交调失...

产品型号BLF178XR的Datasheet PDF文件预览

BLF178XR; BLF178XRS  
Power LDMOS transistor  
Rev. 4 — 12 July 2013  
Product data sheet  
1. Product profile  
1.1 General description  
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial  
applications in the HF to 128 MHz band.  
Table 1.  
Application information  
Test signal  
f
VDS  
(V)  
50  
PL  
Gp  
D  
(%)  
80  
(MHz)  
108  
108  
(W)  
(dB)  
23  
CW  
1200  
1400  
pulsed RF  
50  
28  
72  
1.2 Features and benefits  
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an  
Dq of 40 mA, a tp of 100 s with of 20 %:  
I
Output power = 1400 W  
Power gain = 28 dB  
Efficiency = 72 %  
Easy power control  
Integrated ESD protection  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (HF to 128 MHz)  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
Industrial, scientific and medical applications  
Broadcast transmitter applications  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
2. Pinning information  
Table 2.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
BLF178XR (SOT539A)  
1
2
3
4
5
drain1  
drain2  
gate1  
gate2  
source  
1
3
2
4
1
5
3
5
4
[1]  
2
sym117  
BLF178XRS (SOT539B)  
1
2
3
4
5
drain1  
drain2  
gate1  
gate2  
source  
1
3
2
4
1
5
3
5
4
[1]  
2
sym117  
[1] Connected to flange.  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name Description  
Version  
BLF178XR  
-
flanged balanced LDMOST ceramic package;  
2 mounting holes; 4 leads  
SOT539A  
BLF178XRS  
-
earless flanged balanced LDMOST ceramic package;  
4 leads  
SOT539B  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
-
Max  
Unit  
V
drain-source voltage  
gate-source voltage  
storage temperature  
junction temperature  
110  
+11  
VGS  
Tstg  
6  
65  
-
V
+150 C  
200 C  
Tj  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
2 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
5. Thermal characteristics  
Table 5.  
Thermal characteristics  
Symbol Parameter  
Conditions  
Tj = 150 C  
Typ  
Unit  
[1][2]  
[3]  
Rth(j-c)  
Zth(j-c)  
thermal resistance from junction to case  
0.11  
K/W  
transient thermal impedance from junction Tj = 150 C; tp = 100 s;  
0.033 K/W  
to case  
= 20 %  
[1] Tj is the junction temperature.  
[2] Rth(j-c) is measured under RF conditions.  
[3] See Figure 1.  
DDDꢀꢁꢁꢂꢃꢂꢄ  
ꢁꢉꢀꢄꢅ  
=
WKꢋMꢂFꢌ  
ꢋ.ꢍ:ꢌ  
ꢁꢉꢀꢀ  
ꢋꢃꢌ  
ꢋꢄꢌ  
ꢋꢅꢌ  
ꢋꢆꢌ  
ꢋꢇꢌ  
ꢋꢈꢌ  
ꢋꢀꢌ  
ꢁꢉꢁꢅꢅ  
ꢂꢃ  
ꢂꢄ  
ꢂꢅ  
ꢂꢆ  
ꢂꢇ  
ꢂꢈ  
ꢂꢀ  
ꢀꢁ  
ꢀꢁ  
ꢀꢁ  
ꢀꢁ  
ꢀꢁ  
ꢀꢁ  
ꢀꢁ  
ꢀꢁ  
W ꢊꢋVꢌ  
S
(1) = 1 %  
(2) = 2 %  
(3) = 5 %  
(4) = 10 %  
(5) = 20 %  
(6) = 50 %  
(7) = 100 % (DC)  
Fig 1. Transient thermal impedance from junction to case as a function of pulse  
duration  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
3 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
6. Characteristics  
Table 6.  
DC characteristics  
Tj = 25 C; per section unless otherwise specified.  
Symbol Parameter  
Conditions  
VGS = 0 V; ID = 5.5 mA  
Min  
Typ  
Max  
Unit  
V(BR)DSS drain-source breakdown  
voltage  
110  
-
-
V
VGS(th)  
VGSq  
IDSS  
gate-source threshold voltage VDS = 10 V; ID = 550 mA 1.25  
1.7  
1.3  
-
2.25  
1.8  
2.8  
-
V
gate-source quiescent voltage VDS = 50 V; ID = 20 mA  
0.8  
V
drain leakage current  
drain cut-off current  
VGS = 0 V; VDS = 50 V  
-
-
A  
A
IDSX  
VGS = VGS(th) + 3.75 V;  
77  
VDS = 10 V  
IGSS  
gate leakage current  
VGS = 11 V; VDS = 0 V  
-
-
-
280  
-
nA  
RDS(on) drain-source on-state  
resistance  
VGS = VGS(th) + 3.75 V;  
ID = 19.25 A  
0.07  
Table 7.  
AC characteristics  
Tj = 25 C; per section unless otherwise specified.  
Symbol Parameter Conditions  
feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz  
Min Typ Max Unit  
Crs  
-
-
-
5.5  
-
-
-
pF  
pF  
pF  
Ciss  
Coss  
input capacitance  
output capacitance  
VGS = 0 V; VDS = 50 V; f = 1 MHz  
VGS = 0 V; VDS = 50 V; f = 1 MHz  
414  
184  
Table 8.  
RF characteristics  
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;  
IDq = 40 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.  
Symbol  
Gp  
Parameter  
Conditions  
PL = 1400 W  
PL = 1400 W  
PL = 1400 W  
Min  
27  
-
Typ  
28  
Max  
Unit  
power gain  
-
dB  
dB  
%
RLin  
D  
input return loss  
drain efficiency  
15  
72  
11  
68  
-
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
4 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
DDDꢀꢁꢁꢂꢃꢃꢁ  
ꢎꢁꢁ  
&
RVV  
ꢋS)ꢌ  
ꢄꢁꢁ  
ꢇꢁꢁ  
ꢀꢁ  
ꢈꢁ  
ꢇꢁ  
ꢆꢁ  
ꢊꢋ9ꢌ  
ꢅꢁ  
9
'6  
VGS = 0 V; f = 1 MHz.  
Fig 2. Output capacitance as a function of drain-source voltage; typical values per  
section  
7. Test information  
7.1 Ruggedness in class-AB operation  
The BLF178XR and BLF178XRS are capable of withstanding a load mismatch  
corresponding to VSWR > 65 : 1 through all phases under the following conditions:  
V
DS = 50 V; IDq = 40 mA; PL = 1400 W pulsed; f = 108 MHz.  
7.2 Impedance information  
drain 1  
gate 1  
Z
Z
L
i
gate 2  
drain 2  
001aan207  
Fig 3. Definition of transistor impedance  
Table 9.  
Typical push-pull impedance  
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W.  
f
Zi  
ZL  
(MHz)  
108  
()  
()  
2.35 j6.06  
2.78 + j0.48  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
5 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
7.3 Test circuit  
7ꢈ  
&ꢃ  
&ꢅ  
ꢐ9GV  
ꢐ9JV  
/ꢅ  
&ꢀꢁ  
&ꢀꢈ  
5ꢇ  
&ꢀꢆ  
&ꢀꢄ  
/ꢃ  
/ꢏ  
&ꢀ  
&ꢈꢀ  
&ꢈꢈ  
/ꢀ  
&ꢇ  
&ꢈ /ꢈ /ꢆ  
/ꢇ  
&ꢀꢎ  
&ꢀꢏ  
&ꢆ  
&ꢀꢃ  
&ꢀꢅ  
&ꢈꢁ  
5ꢆ  
&ꢀꢇ  
/ꢄ  
&ꢀꢀ  
ꢐ9JV  
&ꢄ  
ꢐ9GV  
&ꢏ  
7ꢀ  
DDDꢀꢁꢁꢃꢃꢅꢆ  
ꢅꢅꢉꢆꢅꢊPP  
ꢈꢀꢉꢄꢊPP  
ꢈꢆꢉꢈꢊPP  
ꢅꢀꢉꢅꢊPP  
Printed-Circuit Board (PCB): RF 35; r = 3.5; thickness = 0.765 mm; thickness copper plating = 35 m.  
See Table 10 for a list of components.  
Fig 4. Component layout for class-AB production test circuit  
Table 10. List of components  
For test circuit see Figure 4.  
Component  
Description  
Value  
Remarks  
[1]  
C1, C2, C5, C6, C14,  
C15, C21, C22  
multilayer ceramic chip capacitor  
1 nF  
[1]  
[1]  
C3  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
electrolytic capacitor  
82 pF  
C4  
240 pF  
C7, C8  
C10, C11  
C12, C13  
C16, C17  
C18  
4.7 F; 50 V  
2200 F; 63 V  
4.7 F; 100 V  
multilayer ceramic chip capacitor  
[1]  
[1]  
[1]  
[1]  
multilayer ceramic chip capacitor 120 pF  
multilayer ceramic chip capacitor 82 pF  
C19  
multilayer ceramic chip capacitor  
110 pF  
C20  
multilayer ceramic chip capacitor 56 pF  
L1, L2, L3, L4  
1.5 turn 0.8 mm copper wire  
5 turn 0.8 mm copper wire  
2.5 turn 0.8 mm copper wire  
D = 3 mm;  
length = 2 mm  
L5, L6  
L7, L8  
D = 3 mm;  
length = 4.5 mm  
D = 3 mm;  
length = 3 mm  
R3, R4  
T1  
SMD resistor  
9.1   
1206  
semi rigid coax  
semi rigid coax  
25 ; 160 mm  
25 ; 160 mm  
UT-090C-25  
UT-141C-25  
T2  
[1] American Technical Ceramics type 800B or capacitor of same quality.  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
6 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
7.4 Graphical data  
The following figures are measured in a class-AB production test circuit.  
7.4.1 1-Tone CW pulsed  
DDDꢀꢁꢁꢃꢂꢇꢃ  
DDDꢀꢁꢁꢃꢂꢇꢂ  
ꢄꢃ  
ꢇꢈ  
ꢇꢁ  
ꢈꢏ  
ꢈꢄ  
ꢈꢆ  
ꢏꢁ  
ꢄꢁ  
ꢆꢁ  
ꢈꢁ  
*
Ș
'
ꢋꢑꢌ  
S
3
/
ꢋG%ꢌ  
ꢋG%Pꢌ  
*
S
ꢄꢅ  
OGHDOꢊ3  
ꢋꢀꢌ  
/
ꢋꢈꢌ  
ꢄꢇ  
ꢄꢀ  
ꢅꢎ  
Ș
'
3
/
ꢇꢁ  
ꢇꢈ  
ꢇꢆ  
ꢇꢄ  
ꢈꢅꢁ  
ꢅꢁꢁ  
ꢃꢅꢁ ꢀꢁꢁꢁ ꢀꢈꢅꢁ ꢀꢅꢁꢁ ꢀꢃꢅꢁ  
3 ꢊꢋG%Pꢌ  
3 ꢊꢋ:ꢌ  
/
L
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;  
= 20 %.  
VDS = 50 V; IDq = 40 mA; f = 108 MHz; tp = 100 s;  
= 20 %.  
(1) PL(1dB) = 61.3 dBm (1350 W)  
(2) PL(3dB) = 61.9 dBm (1550 W)  
Fig 5. Power gain and drain efficiency as function of  
output power; typical values  
Fig 6. Output power as a function of input power;  
typical values  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
7 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
DDDꢀꢁꢁꢃꢂꢇꢅ  
DDDꢀꢁꢁꢃꢂꢇꢈ  
ꢇꢈ  
ꢏꢁ  
*
Ș
S
'
ꢋG%ꢌ  
ꢋꢑꢌ  
ꢋꢀꢌ  
ꢋꢈꢌ  
ꢋꢇꢌ  
ꢋꢆꢌ  
ꢇꢁ  
ꢈꢏ  
ꢈꢄ  
ꢈꢆ  
ꢄꢁ  
ꢆꢁ  
ꢈꢁ  
ꢋꢆꢌ  
ꢋꢇꢌ  
ꢋꢈꢌ  
ꢋꢀꢌ  
ꢈꢅꢁ  
ꢅꢁꢁ  
ꢃꢅꢁ ꢀꢁꢁꢁ ꢀꢈꢅꢁ ꢀꢅꢁꢁ ꢀꢃꢅꢁ  
3 ꢊꢋ:ꢌ  
ꢈꢅꢁ  
ꢅꢁꢁ  
ꢃꢅꢁ ꢀꢁꢁꢁ ꢀꢈꢅꢁ ꢀꢅꢁꢁ ꢀꢃꢅꢁ  
3 ꢊꢋ:ꢌ  
/
/
VDS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.  
V
DS = 50 V; f = 108 MHz; tp = 100 s; = 20 %.  
(1) IDq = 20 mA  
(2) IDq = 40 mA  
(1) IDq = 20 mA  
(2) IDq = 40 mA  
(3)  
I
Dq = 80 mA  
(3) IDq = 80 mA  
(4) IDq = 160 mA  
(4) IDq = 160 mA  
Fig 7. Power gain as a function of output power;  
typical values  
Fig 8. Drain efficiency as a function of output power;  
typical values  
DDDꢀꢁꢁꢃꢂꢇꢇ  
DDDꢀꢁꢁꢃꢂꢇꢉ  
ꢇꢀ  
ꢏꢁ  
ꢋꢅꢌ  
ꢋꢄꢌ  
ꢋꢃꢌ  
ꢋꢆꢌ  
ꢋꢇꢌ  
ꢋꢈꢌ  
*
S
Ș
'
ꢋꢑꢌ  
ꢋꢀꢌ  
ꢋG%ꢌ  
ꢈꢎ  
ꢄꢁ  
ꢆꢁ  
ꢈꢁ  
ꢈꢃ  
ꢋꢄꢌ  
ꢋꢃꢌ  
ꢋꢅꢌ  
ꢋꢆꢌ  
ꢈꢅ  
ꢈꢇ  
ꢈꢀ  
ꢀꢎ  
ꢋꢇꢌ  
ꢋꢈꢌ  
ꢋꢀꢌ  
ꢈꢅꢁ  
ꢅꢁꢁ  
ꢃꢅꢁ ꢀꢁꢁꢁ ꢀꢈꢅꢁ ꢀꢅꢁꢁ ꢀꢃꢅꢁ  
3 ꢊꢋ:ꢌ  
ꢈꢅꢁ  
ꢅꢁꢁ  
ꢃꢅꢁ ꢀꢁꢁꢁ ꢀꢈꢅꢁ ꢀꢅꢁꢁ ꢀꢃꢅꢁ  
3 ꢊꢋ:ꢌ  
/
/
IDq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.  
DS = 20 V  
I
Dq = 40 mA; f = 108 MHz; tp = 100 s; = 20 %.  
(1)  
V
(1) VDS = 20 V  
(2) VDS = 25 V  
(3) VDS = 30 V  
(2) VDS = 25 V  
(3) VDS = 30 V  
(4)  
V
DS = 35 V  
(4) VDS = 35 V  
(5) VDS = 40 V  
(6) VDS = 45 V  
(5) VDS = 40 V  
(6) VDS = 45 V  
(7)  
V
DS = 50 V  
(7) VDS = 50 V  
Fig 9. Power gain as a function of output power;  
typical values  
Fig 10. Drain efficiency as a function of output power;  
typical values  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
8 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
8. Package outline  
Flanged balanced ceramic package; 2 mounting holes; 4 leads  
SOT539A  
D
A
F
D
1
U
1
B
q
C
w
H
1
M
M
C
2
c
1
2
4
E
p
E
H
U
1
2
5
w
M
M
M
B
A
1
L
3
A
w
b
M
3
Q
e
0
5
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
e
E
E
F
H
H
L
p
Q
q
U
U
w
w
w
3
UNIT  
1
1
1
1
2
1
2
11.81  
11.56  
3.30 2.26  
3.05 2.01  
4.7  
4.2  
31.55 31.52  
30.94 30.96  
9.50 9.53 1.75 17.12 25.53 3.48  
9.30 9.27 1.50 16.10 25.27 2.97  
41.28 10.29  
41.02 10.03  
0.18  
0.10  
35.56  
1.400  
0.25 0.51 0.25  
0.010 0.020 0.010  
mm  
13.72  
0.465  
0.455  
0.130 0.089  
0.120 0.079  
0.185  
0.165  
1.242 1.241  
1.218 1.219  
0.374 0.375 0.069 0.674 1.005 0.137  
0.366 0.365 0.059 0.634 0.995 0.117  
1.625 0.405  
1.615 0.395  
0.007  
0.004  
0.540  
inches  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
10-02-02  
12-05-02  
SOT539A  
Fig 11. Package outline SOT539A  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
9 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
Earless flanged balanced ceramic package; 4 leads  
SOT539B  
D
A
F
5
D
1
D
U
H
1
c
w
2
D
1
1
2
E
1
U
E
H
2
L
3
4
b
w
3
Q
e
0
5
10 mm  
scale  
Dimensions  
(1)  
Unit  
A
b
c
D
D
1
E
E
e
F
H
H
L
Q
U
1
U
2
w
2
w
3
1
1
max 4.7 11.81 0.18 31.55 31.52 9.5  
mm nom  
min 4.2 11.56 0.10 30.94 30.96 9.3  
9.53  
1.75 17.12 25.53 3.48 2.26 32.39 10.29  
13.72  
0.54  
0.25 0.25  
0.01 0.01  
9.27  
1.50 16.10 25.27 2.97 2.01 32.13 10.03  
0.069 0.674 1.005 0.137 0.089 1.275 0.405  
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375  
inches nom  
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365  
0.059 0.634 0.995 0.117 0.079 1.265 0.395  
Note  
1. millimeter dimensions are derived from the original inch dimensions.  
sot539b_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
12-05-02  
13-05-24  
SOT539B  
Fig 12. Package outline SOT539B  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
10 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
9. Handling information  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling  
electrostatic sensitive devices.  
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or  
equivalent standards.  
10. Abbreviations  
Table 11. Abbreviations  
Acronym  
CW  
Description  
Continuous Wave  
ESD  
ElectroStatic Discharge  
HF  
High Frequency  
LDMOS  
LDMOST  
SMD  
Laterally Diffused Metal-Oxide Semiconductor  
Laterally Diffused Metal-Oxide Semiconductor Transistor  
Surface Mounted Device  
VSWR  
Voltage Standing-Wave Ratio  
11. Revision history  
Table 12. Revision history  
Document ID  
Release date Data sheet status  
20130712 Product data sheet  
The package outline Figure 12 is updated.  
20120625 Product data sheet  
Change notice Supersedes  
BLF178XR_BLF178XRS v.4  
Modifications:  
-
BLF178XR_BLF178XRS v.3  
BLF178XR_BLF178XRS v.3  
Modifications:  
-
BLF178XR_BLF178XRS v.2  
The status of this document has been changed to Product data sheet.  
BLF178XR_BLF178XRS v.2  
BLF178XR_BLF178XRS v.1  
20120515  
Preliminary data sheet -  
BLF178XR_BLF178XRS v.1  
20120130  
Objective data sheet  
-
-
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
11 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
Suitability for use — NXP Semiconductors products are not designed,  
12.2 Definitions  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors and its suppliers accept no liability for  
inclusion and/or use of NXP Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at the customer’s own  
risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Customers are responsible for the design and operation of their applications  
and products using NXP Semiconductors products, and NXP Semiconductors  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the NXP  
Semiconductors product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
NXP Semiconductors and its customer, unless NXP Semiconductors and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the NXP Semiconductors product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
NXP Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using NXP  
Semiconductors products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). NXP does not accept any liability in this respect.  
12.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, NXP Semiconductors does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information. NXP Semiconductors takes no  
responsibility for the content in this document if provided by an information  
source outside of NXP Semiconductors.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
In no event shall NXP Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — NXP Semiconductors  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nxp.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. NXP Semiconductors hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of NXP Semiconductors products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of NXP Semiconductors.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
12 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
NXP Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies NXP Semiconductors for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond NXP Semiconductors’  
standard warranty and NXP Semiconductors’ product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific NXP Semiconductors product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. NXP  
Semiconductors accepts no liability for inclusion and/or use of  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
non-automotive qualified products in automotive equipment or applications.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without NXP Semiconductors’ warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
BLF178XR_BLF178XRS  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2013. All rights reserved.  
Product data sheet  
Rev. 4 — 12 July 2013  
13 of 14  
BLF178XR; BLF178XRS  
NXP Semiconductors  
Power LDMOS transistor  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features and benefits. . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
7
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5  
Ruggedness in class-AB operation . . . . . . . . . 5  
Impedance information. . . . . . . . . . . . . . . . . . . 5  
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7  
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7  
7.1  
7.2  
7.3  
7.4  
7.4.1  
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Handling information. . . . . . . . . . . . . . . . . . . . 11  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . 13  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2013.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 12 July 2013  
Document identifier: BLF178XR_BLF178XRS  
配单直通车
BLF1820-40产品参数
型号:BLF1820-40
是否Rohs认证: 不符合
生命周期:Transferred
包装说明:,
Reach Compliance Code:unknown
风险等级:5.84
配置:Single
最大漏极电流 (Abs) (ID):5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0
工作模式:ENHANCEMENT MODE
最高工作温度:200 °C
极性/信道类型:N-CHANNEL
子类别:FET General Purpose Power
端子面层:Tin/Lead (Sn/Pb)
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