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产品型号BLW86的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
BLW86  
HF/VHF power transistor  
August 1986  
Product specification  
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
It has a 3/8" flange envelope with a  
ceramic cap. All leads are isolated  
from the flange.  
DESCRIPTION  
N-P-N silicon planar epitaxial  
transistor intended for use in class-A,  
AB and B operated h.f. and v.h.f.  
transmitters with a nominal supply  
voltage of 28 V. The transistor is  
resistance stabilized and is  
guaranteed to withstand severe load  
mismatch conditions. Matched  
hFE groups are available on request.  
QUICK REFERENCE DATA  
R.F. performance up to Th = 25 °C  
MODE OF  
OPERATION  
VCE  
V
f
PL  
W
Gp  
dB  
η
%
zi  
YL  
mS  
d3  
dB  
MHz  
c.w. (class-B)  
s.s.b. (class-AB)  
s.s.b. (class-A)  
28  
28  
26  
175  
45  
>
7,5  
>
70 0,7 + j1,3 110 j62  
1,6 28  
1,6 28  
547,5 (P.E.P.) typ. 19  
typ. 45  
typ. 30  
typ. 42  
17 (P.E.P.) typ. 22  
PIN CONFIGURATION  
PINNING - SOT123  
PIN  
1
DESCRIPTION  
alfpage  
collector  
emitter  
base  
1
4
2
c
3
handbook, halfpage  
4
emitter  
b
e
MBB012  
2
3
MSB057  
Fig.1 Simplified outline and symbol.  
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely  
safe provided that the BeO disc is not damaged.  
August 1986  
2
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
RATINGS  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
Collector-emitter voltage (VBE = 0)  
peak value  
VCESM  
max.  
max.  
max.  
max.  
max.  
max.  
65 V  
36 V  
4 V  
Collector-emitter voltage (open base)  
Emitter-base voltage (open-collector)  
Collector current (average)  
VCEO  
VEBO  
IC(AV)  
ICM  
4 A  
Collector current (peak value); f > 1 MHz  
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C  
Storage temperature  
12 A  
105 W  
Prf  
Tstg  
Tj  
65 to + 150 °C  
Operating junction temperature  
max.  
200 °C  
MGP630  
MGP631  
10  
150  
handbook, halfpage  
handbook, halfpage  
P
rf  
(W)  
I
C
(A)  
100  
ΙΙΙ  
ΙΙ  
derate by 0.58 W/K  
0.43 W/K  
T
= 70 °C  
T
= 25 °C  
mb  
h
50  
Ι
1
10  
0
0
2
10  
50  
100  
V
(V)  
CE  
T (°C)  
h
I
Continuous d.c. operation  
II Continuous r.f. operation  
III Short-time operation during mismatch  
Fig.2 D.C. SOAR.  
Fig.3 R.F. power dissipation; VCE 28 V; f > 1 MHz.  
THERMAL RESISTANCE  
(dissipation = 45 W; Tmb = 83,5 °C, i.e. Th = 70 °C)  
From junction to mounting base (d.c. dissipation)  
From junction to mounting base (r.f. dissipation)  
From mounting base to heatsink  
Rth j-mb(dc)  
Rth j-mb(rf)  
Rth mb-h  
=
=
=
2,65 K/W  
1,95 K/W  
0,3 K/W  
August 1986  
3
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified  
Collector-emitter breakdown voltage  
V
BE = 0; IC = 25 mA  
V(BR)CES  
V(BR)CEO  
V(BR)EBO  
ICES  
>
>
>
<
65 V  
36 V  
4 V  
Collector-emitter breakdown voltage  
open base; IC = 100 mA  
Emitter-base breakdown voltage  
open collector; IE = 10 mA  
Collector cut-off current  
VBE = 0; VCE = 36 V  
10 mA  
Second breakdown energy; L = 25 mH; f = 50 Hz  
open base  
ESBO  
ESBR  
>
>
8 mJ  
8 mJ  
R
BE = 10 Ω  
D.C. current gain(1)  
IC = 2,5 A; VCE = 5 V  
typ.  
45  
hFE  
10 to 80  
D.C. current gain ratio of matched devices(1)  
IC = 2,5 A; VCE = 5 V  
hFE1/hFE2  
<
1,2  
Collector-emitter saturation voltage(1)  
IC = 7,5 A; IB = 1,5 A  
VCEsat  
typ.  
1,5 V  
Transition frequency at f = 100 MHz(1)  
IE = 2,5 A; VCB = 28 V  
fT  
fT  
typ.  
typ.  
570 MHz  
570 MHz  
IE = 7,5 A; VCB = 28 V  
Collector capacitance at f = 1 MHz  
IE = Ie = 0; VCB = 28 V  
Cc  
typ.  
82 pF  
Feedback capacitance at f = 1 MHz  
IC = 100 mA; VCE = 28 V  
Cre  
Ccf  
typ.  
typ.  
54 pF  
2 pF  
Collector-flange capacitance  
Note  
MGP632  
4
1. Measured under pulse  
handbook, halfpage  
conditions: tp 200 µs; δ ≤ 0,02.  
I
C
(A)  
2
T
= 70 °C  
25 °C  
h
Fig.4 Typical values;  
VCE = 28 V.  
0
0.5  
1
1.5  
V
(V)  
BE  
August 1986  
4
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
MGP633  
MGP634  
300  
100  
handbook, halfpage  
handbook, halfpage  
C
c
(pF)  
h
FE  
V
= 28 V  
CE  
200  
50  
5 V  
100  
typ  
0
0
0
0
5
10  
15  
20  
40  
I
(A)  
V
(V)  
CB  
C
Fig.5 Typical values; Tj = 25 °C.  
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.  
MGP635  
1000  
f
T
(MHz)  
V
= 28 V  
CB  
500  
15 V  
0
0
5
10  
15  
I (A)  
E
Fig.7 Typical values; f = 100 MHz; Tj = 25 °C.  
August 1986  
5
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
APPLICATION INFORMATION  
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C  
f (MHz)  
V
CE (V)  
PL (W)  
PS (W)  
GP (dB)  
IC (A)  
η (%)  
> 70  
zi ()  
YL (mS)  
175  
28  
45  
< 8  
> 7,5  
< 2,47  
0,7 + j1,3  
110 j62  
C6a  
C7  
L5  
L7  
C3a  
L4  
50 Ω  
C1  
L1  
C2  
T.U.T.  
C6b  
50 Ω  
C8  
L6  
C3b  
L2  
C4  
C5  
R2  
R1  
L3  
L8  
MGP604  
+V  
CC  
Fig.8 Test circuit; c.w. class-B.  
List of components:  
C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)  
C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)  
C3a = C3b = 47 pF ceramic capacitor (500 V)  
C4 = 120 pF ceramic capacitor  
C5 = 100 nF polyester capacitor  
C6a = 2,2 pF ceramic capacitor (500 V)  
C6b = 1,8 pF ceramic capacitor (500 V)  
C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)  
L1 = 14 nH; 1 turn Cu wire (1,6 mm); int. dia. 7,7 mm; leads 2 × 5 mm  
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm  
L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)  
L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor  
L6 = 80 nH; 3 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 8,0 mm; leads 2 × 5 mm  
L7 = 62 nH; 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 8,1 mm; leads 2 × 5 mm  
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/6".  
R1 = R2 = 10 carbon resistor  
Component layout and printed-circuit board for 175 MHz test circuit see Fig.9.  
August 1986  
6
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
150  
72  
1888MJK  
L3  
L8  
+V  
CC  
C4  
R1  
C5  
R2  
C3a  
L6  
L2  
C6a  
L5  
L1  
C1  
C2  
C7  
L4  
C8  
L7  
C6b  
C3b  
1888MJK  
rivet  
MGP605  
Fig.9 Component layout and printed-circuit board for 175 MHz test circuit.  
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully  
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu  
straps are used for a direct contact between upper and lower sheets.  
To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed.  
August 1986  
7
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
MGP637  
MGP636  
75  
10  
100  
handbook, halfpage  
handbook, halfpage  
P
L
(W)  
T
= 25 °C  
70 °C  
G
p
(dB)  
η
(%)  
h
G
p
50  
η
5
50  
25  
0
0
0
75  
0
25  
50  
0
10  
20  
P
(W)  
P (W)  
L
S
Fig.10 Typical values; VCE = 28 V; f = 175 MHz.  
Fig.11 Typical values; VCE = 28 V; f = 175 MHz;  
− − − Th = 25 °C; Th = 70 °C.  
MGP638  
100  
handbook, halfpage  
P
Lnom  
(W)  
(VSWR = 1)  
T
= 50 °C  
h
50  
70 °C  
90 °C  
0
2
1
10  
10  
VSWR  
The graph shows the permissible output power under  
nominal conditions (VSWR = 1) as a function of the  
expected VSWR during short-time mismatch  
conditions with heatsink temperatures as parameter.  
Fig.12 R.F. SOAR; c.w. class-B operation;  
f = 175 MHz; VCE = 28 V; Rth mb-h = 0,3 K/W  
August 1986  
8
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
MGP639  
MGP640  
2.5  
10  
0
handbook, halfpage  
handbook, halfpage  
R
C
L
R
C
L
x
i
L
R
L
()  
r , x  
C
L
i
i
(pF)  
()  
r
i
r
i
L
0
5
250  
x
i
2.5  
0
0
500  
300  
0
100  
200  
300  
100  
200  
f (MHz)  
f (MHz)  
Typical values; VCE = 28 V; PL = 45 W; Th = 25 °C.  
Typical values; VCE = 28 V; PL = 45 W; Th = 25 °C.  
Fig.13 Input impedance (series components).  
Fig.14 Load impedance (parallel components).  
OPERATING NOTE  
Below 75 MHz a base-emitter resistor of 10 is  
recommended to avoid oscillation. This resistor must be  
effective for r.f. only.  
MGP641  
25  
handbook, halfpage  
G
p
(dB)  
20  
15  
10  
5
0
0
100  
200  
300  
f (MHz)  
Typical values; VCE = 28 V; PL = 45 W; Th = 25 °C.  
Fig.15 Power gain versus frequency.  
August 1986  
9
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
R.F. performance in s.s.b. class-AB operation (linear power amplifier)  
VCE = 28 V; f1 = 28,000; f2 = 28,001 MHz.  
OUTPUT POWER  
W
GP  
dB  
ηdt (%)  
at 47,5 W  
IC (A)  
(P.E.P.)  
d3  
dB(1)  
d5  
dB(1)  
IC(ZS)  
mA  
Th  
°C  
5 to 47,5 (P.E.P.)  
5 to 42,5 (P.E.P.)  
typ. 19  
typ. 19  
typ. 45  
typ. 1,9  
typ. 30  
typ. 30  
< −30  
< −30  
50  
50  
25  
70  
Note  
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.  
Relative to the according peak envelope powers these figures should be increased by 6 dB.  
C7  
L4  
50 Ω  
C1  
R1  
L1  
C2  
50 Ω  
T.U.T.  
C4  
C8  
L3  
R2  
L2  
temperature  
compensated bias  
+V  
CC  
C5  
C6  
C3  
MGP642  
Fig.16 Test circuit; s.s.b. class-AB.  
List of components:  
C1 = C2 = 10 to 780 pF film dielectric trimmer  
C3 = C5 = C6 = 220 nF polyester capacitor  
C4 = 56 pF ceramic capacitor (500 V)  
C7 = C8 = 15 to 575 pF film dielectric trimmer  
L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2 × 5 mm  
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)  
L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2 × 5 mm  
L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2 × 5 mm  
R1 =1,2 ; parallel connection of 4 × 4,7 carbon resistors  
R2 = 39 carbon resistor  
August 1986  
10  
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
MGP644  
MGP643  
50  
20  
20  
handbook, halfpage  
handbook, halfpage  
G
η
G
p
(dB)  
p
dt  
d , d  
3
5
(%)  
T
=
h
(dB)  
90 °C  
70 °C  
50 °C  
25 °C  
40  
15  
d
3
30  
η
dt  
30  
20  
10  
5
40  
50  
d
5
10  
0
0
75  
25  
50  
0
25  
50  
P.E.P. (W)  
P.E.P. (W)  
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;  
f2 = 28,001 MHz; typical values.  
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;  
f2 = 28,001 MHz; Th = 25 °C; typical values.  
Fig.17 Intermodulation distortion as a function of  
output power.(1)  
Fig.18 Double-tone efficiency and power gain as a  
function of output power.  
MGP645  
MGP646  
30  
20  
handbook, halfpage  
handbook, halfpage  
G
p
(dB)  
r , x  
i
i
()  
20  
10  
r
i
10  
0
x
i
0
10  
2
2
1
10  
10  
1
10  
10  
f (MHz)  
f (MHz)  
VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W;  
VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W;  
Th = 25 °C; ZL = 6,4 .  
Th = 25 °C; ZL = 6,4 .  
Fig.19 Power gain as a function of frequency.  
Fig.20 Input impedance (series components) as a  
function of frequency.  
Figs 19 and 20 are typical curves and hold for an  
unneutralized amplifier in s.s.b. class-AB operation.  
August 1986  
11  
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
Ruggedness in s.s.b. operation  
The BLW86 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: class-AB operation;  
f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Th = 70 °C and PLnom = 50 W P.E.P.  
R.F. performance in s.s.b. class-A operation (linear power amplifier)  
VCE = 26 V; f1 = 28,000 MHz; f2 = 28,001 MHz  
OUTPUT POWER  
W
GP  
dB  
IC  
A
d3  
dB(1)  
d5  
dB(1)  
Th  
°C  
17 (P.E.P.)  
17 (P.E.P.)  
typ. 22  
typ. 22  
1,7  
1,7  
typ. 40  
typ. 42  
< −40  
< −40  
70  
25  
Note  
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.  
Relative to the according peak envelope powers these figures should be increased by 6 dB.  
C10  
L5  
50 Ω  
C1  
L1  
R3  
T.U.T.  
50 Ω  
C11  
C5  
L4  
R4  
L3  
C2  
C7  
C6  
R7  
C4  
C8  
C3  
L2  
R5  
R8  
+V  
CC  
R9  
BY206  
C9  
BD204  
R6  
MGP647  
R1  
R2  
Fig.21 Test circuit; s.s.b. class-A.  
August 1986  
12  
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
List of components in Fig.21:  
C1 = C2 = 10 to 780 pF film dielectric trimmer  
C3 = 22 nF ceramic capacitor (63 V)  
C4 = 47 µF/10 V electrolytic capacitor  
C5 = 56 pF ceramic capacitor (500 V)  
C6 = 47 µF/35 V electrolytic capacitor  
C7 = C8 = 220 nF polyester capacitor  
C9 = 10 µF/35 V electrolytic capacitor  
C10 = 10 to 210 pF film dielectric trimmer  
C11 = 15 to 575 pF film dielectric trimmer  
L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm  
L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)  
L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm  
L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm  
R1 = 600 Ω; parallel connection of 2 × 1,2 kcarbon resistors (±5%; 0,5 W each)  
R2 = 15 carbon resistor (±5%; 0,25 W)  
R3 = 1,2 ; parallel connection of 4 × 4,7 carbon resistors (±5%; 0,125 W each)  
R4 = 33 carbon resistor (±5%; 0,25 W)  
R5 = 18 carbon resistor (±5%; 0,25 W)  
R6 = 120 wirewound resistor (±5%; 5,5 W)  
R7 = 1 carbon resistor (±5%; 0,125 W)  
R8 = 47 wirewound potentiometer (3 W)  
R9 = 1,57 Ω; parallel connection of 3 × 4,7 wirewound resistors (±5%; 5,5 W each)  
MGP648  
20  
handbook, halfpage  
d
3
(dB)  
30  
I
= 1.4 A  
1.55 A  
1.7 A  
C
40  
50  
60  
0
10  
20  
30  
P.E.P. (W)  
Fig.22 Intermodulation distortion as a function of output power. Typical values; VCE = 26 V; Th = 70 °C;  
f1 = 28,000 MHz; f2 = 28,001 MHz.  
August 1986  
13  
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
PACKAGE OUTLINE  
Flanged ceramic package; 2 mounting holes; 4 leads  
SOT123A  
D
A
F
q
C
M
B
U
1
w
2
C
c
H
b
L
4
3
A
α
p
U
3
U
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm  
scale  
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)  
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
w
w
2
α
UNIT  
mm  
1
1
2
3
1
5.82  
5.56  
9.63  
9.42  
7.47  
6.37  
9.73  
9.47  
2.72 20.71 5.61  
2.31 19.93 5.16  
3.33  
3.04  
4.63  
4.11  
25.15 6.61  
24.38 6.09  
9.78  
9.39  
0.18  
0.10  
18.42  
0.725  
0.51 1.02  
0.02 0.04  
45°  
0.229  
0.219  
0.397  
0.371  
0.294  
0.251  
0.383  
0.373  
0.107 0.815 0.221 0.131  
0.091 0.785 0.203 0.120  
0.26 0.385  
0.24 0.370  
0.007  
0.004  
0.182  
0.162  
0.99  
0.96  
inches  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
SOT123A  
97-06-28  
August 1986  
14  
Philips Semiconductors  
Product specification  
HF/VHF power transistor  
BLW86  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
August 1986  
15  
配单直通车
BLW86产品参数
型号:BLW86
生命周期:Contact Manufacturer
包装说明:,
Reach Compliance Code:unknown
风险等级:5.6
最大集电极电流 (IC):4 A
配置:Single
最小直流电流增益 (hFE):10
最高工作温度:200 °C
极性/信道类型:NPN
最大功率耗散 (Abs):105 W
子类别:Other Transistors
表面贴装:NO
Base Number Matches:1
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