Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
List of components in Fig.21:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 22 nF ceramic capacitor (63 V)
C4 = 47 µF/10 V electrolytic capacitor
C5 = 56 pF ceramic capacitor (500 V)
C6 = 47 µF/35 V electrolytic capacitor
C7 = C8 = 220 nF polyester capacitor
C9 = 10 µF/35 V electrolytic capacitor
C10 = 10 to 210 pF film dielectric trimmer
C11 = 15 to 575 pF film dielectric trimmer
L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
R1 = 600 Ω; parallel connection of 2 × 1,2 kΩ carbon resistors (±5%; 0,5 W each)
R2 = 15 Ω carbon resistor (±5%; 0,25 W)
R3 = 1,2 Ω; parallel connection of 4 × 4,7 Ω carbon resistors (±5%; 0,125 W each)
R4 = 33 Ω carbon resistor (±5%; 0,25 W)
R5 = 18 Ω carbon resistor (±5%; 0,25 W)
R6 = 120 Ω wirewound resistor (±5%; 5,5 W)
R7 = 1 Ω carbon resistor (±5%; 0,125 W)
R8 = 47 Ω wirewound potentiometer (3 W)
R9 = 1,57 Ω; parallel connection of 3 × 4,7 Ω wirewound resistors (±5%; 5,5 W each)
MGP648
−20
handbook, halfpage
d
3
(dB)
−30
I
= 1.4 A
1.55 A
1.7 A
C
−40
−50
−60
0
10
20
30
P.E.P. (W)
Fig.22 Intermodulation distortion as a function of output power. Typical values; VCE = 26 V; Th = 70 °C;
f1 = 28,000 MHz; f2 = 28,001 MHz.
August 1986
13