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产品型号BQ2201SN的概述

BQ2201SN芯片概述 BQ2201SN是一款由德州仪器（Texas Instruments）生产的高性能电池监控芯片，广泛应用于电池管理系统。该芯片集成了多种监控功能，能够提供在电池管理过程中的高精度测量与控制，同时保证系统的稳定性与可靠性。BQ2201SN主要适用于镍氢（NiMH）和镍镉（NiCd）电池，并支持多个电池单元的监控，因而在多种便携式设备、医疗器械及电动工具等领域有着广泛的应用。 BQ2201SN详细参数 BQ2201SN具有一系列优异的技术参数，其主要参数如下： - 电源电压：4.5V至28V - 工作电流：典型值为30µA，最大值可达到100µA - 温度范围：可在-40°C至85°C的环境下正常工作 - 精度：内置12位模数转换器（ADC），具有良好的精度控制 - 接口：I2C串行接口，便于与微控制器进行通信 - 电池单元监控数量：支持至多16个电池单元 - ...

产品型号BQ2201SN的Datasheet PDF文件预览

bq2201

SRAM Nonvolatile Controller Unit

During a power failure, the external

Features

General Description

SRAM is switched from the V_CC

supply to one of two 3V backup sup-

➤ Power monitoring and switching

for 3-volt battery-backup applica-

tions

The CMOS bq2201 SRAM Nonvolatile

plies. On a subsequent power-up, the

Controller Unit provides all necessary

SRAM is write-protected until a

functions for converting a standard

power-valid condition exists.

CMOS SRAM into nonvolatile

➤ Write-protect control

read/write memory.

The bq2201 is footprint- and timing-

compatible with industry stan-

dards with the added benefit of a

chip-enable propagation delay of

less than 10ns.

➤ 3-volt primary cell inputs

A precision comparator monitors the

5V V_CCinput for an out-of-tolerance

condition. When out of tolerance is

detected, a conditioned chip-enable

output is forced inactive to write-

protect any standard CMOS SRAM.

➤ Less than 10ns chip-enable

propagation delay

➤ 5% or 10% supply operation

Pin Connections

Pin Names

V_OUT

Supply output

BC₁—BC₂3-volt primary backup cell inputs

THS

Threshold select input

chip-enable active low input

Conditioned chip-enable output

+5-volt supply input

Ground

V_OUT

V_CC

OUT

CE_CON

V_CC

V_SS

BC₂

BC₁

THS

CON

THS

CE_CON

No Connect

8-Pin Narrow DIP or SOIC

PN220101.eps

16-Pin SOIC

PN2201E.eps

Functional Description

An external CMOS static RAM can be battery-backed

using the V_OUTand the conditioned chip-enable output

pin from the bq2201. As V_CCslews down during a power

failure, the conditioned chip-enable output CE_CONis

forced inactive independent of the chip-enable input CE.

If THS is tied to V_SS, power-fail detection occurs at 4.62V

typical for 5% supply operation. If THS is tied to V_CC

power-fail detection occurs at 4.37V typical for 10% sup-

ply operation. The THS pin must be tied to V_SSor V_CCfor

proper operation.

This activity unconditionally write-protects external If a memory access is in process during power-fail detec-

SRAM as V_CCfalls to an out-of-tolerance threshold V_PFD

tion, that memory cycle continues to completion before the

memory is write-protected. If the memory cycle is not ter-

minated within time t_WPT, the CE_CONoutput is uncondi-

tionally driven high, write-protecting the memory.

V_PFDis selected by the threshold select input pin, THS.

Oct. 1998 D

bq2201

As the supply continues to fall past V_PFD, an internal

switching device forces V_OUTto one of the two external

backup energy sources. CE_CONis held high by the V_OUT

energy source.

A valid isolation signal requires CE low as V_CCcrosses

both V_PFDand V_SOduring a power-down. See Figure 2.

Between these two points in time, CE must be brought

to the point of (0.48 to 0.52) V_CCand held for at least

700ns. The isolation signal is invalid if CE exceeds

During power-up, V_OUTis switched back to the V_CCsup-

ply as V_CCrises above the backup cell input voltage

0.54 V_CCat any point between V_CCcrossing V_PFDand

V_SO

sourcing V_OUT

. The CE_CONoutput is held inactive for

time t_CER(120 ms maximum) after the supply has

reached V_PFD, independent of the CE input, to allow for

processor stabilization.

The appropriate battery is connected to V_OUTand CE_CON

immediately on subsequent application and removal of V_CC

During power-valid operation, the CE input is fed

through to the CE_CONoutput with a propagation delay

of less than 10ns. Nonvolatility is achieved by hardware

hookup, as shown in Figure 1.

PFD

Energy Cell Inputs—BC , BC

Two primary backup energy source inputs are provided

on the bq2201. The BC₁and BC₂inputs accept a 3V pri-

mary battery, typically some type of lithium chemistry.

If no primary cell is to be used on either BC₁or BC₂, the

unused input should be tied to V_SS

If both inputs are used, during power failure the V_OUT

output is fed only by BC₁as long as it is greater than

2.5V. If the voltage at BC₁falls below 2.5V, an internal

isolation switch automatically switches V_OUTfrom BC₁

to BC₂.

0.5 V

700ns

TD220101.eps

To prevent battery drain when there is no valid data to

retain, V_OUTand CE_CONare internally isolated from

BC₁and BC₂by either of the following:

■

Initial connection of a battery to BC₁or BC₂, or

Presentation of an isolation signal on CE.

Figure 2. Battery Isolation Signal

■

OUT

From Address Decoder

bq2201

CMOS

SRAM

CON

THS

Primary

Cell

Primary

Cell

FG220101.eps

Figure 1. Hardware Hookup (5% Supply Operation)

Oct. 1998 D

bq2201

Absolute Maximum Ratings

Symbol

V_CC

Parameter

Value

Unit

Conditions

DC voltage applied on V_CCrelative to V_SS

-0.3 to 7.0

DC voltage applied on any pin excluding V_CC

relative to V_SS

V_T

_T≤ V_CC+ 0.3

-0.3 to 7.0

0 to +70

-40 to +85

-55 to +125

-40 to +85

260

°C

Commercial

T_OPR

Operating temperature

Industrial “N”

T_STG

Storage temperature

Temperature under bias

Soldering temperature

V_OUTcurrent

°C

T_BIAS

T_SOLDER

I_OUT

°C

For 10 seconds

200

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera-

tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-

sure to conditions beyond the operational limits for extended periods of time may affect device reliability.

Recommended DC Operating Conditions (T = T

)

OPR

Symbol

Parameter

Supply voltage

Minimum Typical Maximum

Unit

Notes

4.75

4.50

5.0

5.5

THS = V_SS

THS = V_CC

V_CC

5.5

V_SS

V_IL

V_IH

Supply voltage

Input low voltage

Input high voltage

-0.3

2.2

0.8

V_CC+ 0.3

V_BC1

V_BC2

Backup cell voltage

Threshold select

2.0

4.0

THS

-0.3

V_CC+ 0.3

Note:

Typical values indicate operation at T_A= 25°C, V_CC= 5V or V_BC.

Oct. 1998 D

bq2201

DC Electrical Characteristics (T = T

, V

OPR CC

= 5V ± 10%)

Symbol

I_LI

Parameter

Input leakage current

Output high voltage

V_OH, BC supply

Minimum

Typical

Maximum Unit

Conditions/Notes

V_IN= V_SSto V_CC

± 1

µA

V_OH

V_OHB

V_OL

I_CC

2.4

I_OH= -2.0mA

V_BC- 0.3

V_BC> V_CC, I_OH= -10µA

I_OL= 4.0mA

Output low voltage

Operating supply current

0.4

mA No load on V_OUTand CE_CON.

4.55

4.30

4.62

4.37

V_BC

4.75

4.50

THS = V_SS

THS = V_CC

V_PFD

V_SO

Power-fail detect voltage

Supply switch-over voltage

V_OUTdata-retention current

to additional memory not in-

cluded.

Data-retention mode

current

I_CCDR

100

V_CC- 0.2

V_CC> V_BC, I_OUT= 100mA

V_CC> V_BC, I_OUT= 160mA

V_CC< V_BC, I_OUT= 100µA

V_BC1< 2.5V

V_OUT1

V_OUT2

V_BC

V_OUTvoltage

_CC- 0.3

V_BC- 0.3

V_BC2

V_BC1

Active backup cell

voltage

160

V_BC1> 2.5V

I_OUT1

I_OUT2

V_OUTcurrent

mA V_OUT> V_CC- 0.3V

µA

V_OUT> V_BC- 0.2V

100

Note:

Typical values indicate operation at T_A= 25°C, V_CC= 5V or V_BC.

Oct. 1998 D

bq2201

Capacitance (T = 25°C, F = 1MHz, V

= 5.0V)

Symbol

C_IN

Parameter

Input capacitance

Output capacitance

Minimum

Typical

Maximum

Unit

Conditions

Input voltage = 0V

Output voltage = 0V

C_OUT

Note:

This parameter is sampled and not 100% tested.

AC Test Conditions

Parameter

Test Conditions

0V to 3.0V

5ns

Input pulse levels

Input rise and fall times

Input and output timing reference levels

Output load (including scope and jig)

1.5V (unless otherwise specified)

See Figure 3

960

CON

510

100pF

FG220102.eps

Figure 3. Output Load

Oct. 1998 D

bq2201

Power-Fail Control ^{(TA = T}

)

OPR

Symbol

t_PF

Parameter

Minimum

Typical

Maximum Unit

Notes

V_CCslew, 4.75V to 4.25V

V_CCslew, 4.25V to V_SO

V_CCslew, 4.25V to 4.75V

300

µs

t_FS

t_PU

Chip-enable propagation

delay

t_CED

Time during which SRAM is

ms write-protected after V_CC

passes V_PFDon power-up.

t_CER

Chip-enable recovery

Write-protect time

120

Delay after V_CCslews down

µs

t_WPT

100

150

past V_PFDbefore SRAM is

write-protected.

Note:

Typical values indicate operation at T_A= 25°C.

Caution: Negative undershoots below the absolute maximum rating of -0.3V in battery-backup mode

may affect data integrity.

Power-Down Timing

4.75

PFD

4.25

WPT

OHB

CON

TD220102.eps

Oct. 1998 D

bq2201

Power-Up Timing

4.75

PFD

4.25

CER

CED

OHB

CON

TD220103.eps

Oct. 1998 D

bq2201

8-Pin DIP Narrow (PN)

Dimension

Minimum

0.160

0.015

0.055

0.008

0.350

0.300

0.230

0.300

0.090

0.115

0.020

Maximum

0.180

0.040

0.022

0.065

0.013

0.380

0.325

0.280

0.370

0.110

0.150

0.040

All dimensions are in inches.

8-Pin SOIC Narrow (SN)

Dimension

Minimum

0.060

0.004

0.013

0.007

0.185

0.150

0.045

0.225

0.015

Maximum

0.070

0.010

0.020

0.010

0.200

0.160

0.055

0.245

0.035

All dimensions are in inches.

Oct. 1998 D

bq2201

S: 16-Pin SOIC

(

)

16-Pin S SOIC

Dimension

Minimum

0.095

0.004

0.013

0.008

0.400

0.290

0.045

0.395

0.020

Maximum

0.105

0.012

0.020

0.013

0.415

0.305

0.055

0.415

0.040

All dimensions are in inches.

.004

Oct. 1998 D

bq2201

Data Sheet Revision History

Change No.

Page No.

Description

Nature of Change

Added industrial temperature range

Was: THS tied to V_OUT

Is: THS tied to V_CC

1, 3, 4

10% supply operation

1, 9, 11

Added 16-pin package option

Note:

Change 1 = Sept. 1991 B changes from Sept. 1990 A.

Change 2 = Aug. 1997 C changes from Sept. 1991 B.

Change 3 = Oct. 1998 D changes from Aug. 1997 C.

Oct. 1998 D

bq2201

Ordering Information

bq2201

Temperature Range:

blank = Commercial (0 to +70°C)

N = Industrial (-40 to +85°C)

Package Option:

PN = 8-pin narrow plastic DIP

SN = 8-pin narrow SOIC

S = 16-pin SOIC

Device:

bq2201 Nonvolatile SRAM Controller

Oct. 1998 D

IMPORTANT NOTICE

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue

any product or service without notice, and advise customers to obtain the latest version of relevant information

to verify, before placing orders, that information being relied on is current and complete. All products are sold

subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those

pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent

TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except those mandated by government requirements.

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF

DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL

APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR

WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER

CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO

BE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operating

safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent

that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other

intellectual property right of TI covering or relating to any combination, machine, or process in which such

semiconductor products or services might be or are used. TI’s publication of information regarding any third

party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

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BQ2201SN产品参数

型号:	BQ2201SN
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	BENCHMARQ MICROELECTRONICS INC
包装说明：	SOIC-8
Reach Compliance Code：	unknown
风险等级：	5.17
Is Samacsys：	N
其他特性：	THRESHOLD VOLTAGE ARE 4.62 AND 4.37 VOLT
可调阈值：	YES
模拟集成电路 - 其他类型：	POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0
信道数量：	1
功能数量：	1
端子数量：	8
最高工作温度：	70 °C
最低工作温度：
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装等效代码：	SOP16,.4
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
电源：	5 V
认证状态：	Not Qualified
子类别：	Power Management Circuits
最大供电电流 (Isup)：	5 mA
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
技术：	CMOS
温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
Base Number Matches：	1

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产品型号BQ2201SN的概述

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