BSC159N10LSFG中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

BSC159N10LSF G

OptiMOS™2 Power-Transistor

Product Summary

Features

V _DS

100

15.9

63

V

• N-channel, logic level

R _DS(on),max

I _D

mΩ

A

• Very low gate charge x R _DS(on)product (FOM)

• Low on-resistance R _DS(on)

PG-TDSON-8

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant; Halogen Free

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC159N10LSF G

PG-TDSON-8

159N10LS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

Continuous drain current

63

40

A

T _C=100 °C

T _A=25 °C,

R

9.4

_thJA=50 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

252

155

I _D=50 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

mJ

V

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

114

W

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

Rev. 2.09

page 1

2009-11-04

BSC159N10LSF G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

bottom

-

1.1

18

62

50

K/W

top

R _thJA

minimal footprint

6 cm2 cooling area²⁾

Thermal resistance,

junction - ambient

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSS

V _GS(th)

V

_GS=0 V, I _D=1 mA

_DS=V _GS, I _D=72 µA

Drain-source breakdown voltage

Gate threshold voltage

100

1.2

-

V

1.85

2.4

V

_DS=100 V, V _GS=0 V,

I _DSS

Zero gate voltage drain current

-

0.01

10

1

µA

T _j=25 °C

V

_DS=100 V, V _GS=0 V,

100

T _j=125 °C

I _GSS

V

_GS=20 V, V _DS=0 V

_GS=4.5 V, I _D=25 A

_GS=10 V, I _D=50 A

Gate-source leakage current

-

1

100 nA

R _DS(on)

Drain-source on-state resistance

17.2

12.2

1

21.5

15.9

-

mΩ

R _G

g _fs

Gate resistance

Ω

|V _DS|>2|I _D|R _DS(on)max

I _D=50 A

,

Transconductance

30

59

-

S

¹⁾J-STD20 and JESD22

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

2

³⁾see figure 3

Rev. 2.09

page 2

2009-11-04

BSC159N10LSF G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

-

1900

470

11

2500 pF

V

_GS=0 V, V _DS=50 V,

C _oss

C _rss

t _d(on)

t _r

630

-

f =1 MHz

13

-

ns

24

V

_DD=50 V, V _GS=10 V,

I _D=25 A, R _G=1.6 Ω

t _d(off)

t _f

Turn-off delay time

Fall time

28

6

Gate Charge Characteristics⁴⁾

Gate to source charge

Gate to drain charge

Switching charge

Q _gs

-

7

4

-

nC

Q _gd

V

_DD=50 V, I _D=25 A,

Q _sw

Q _g

8

-

_GS=0 to 10 V

Gate charge total

26

3.7

45

35

-

V _plateau

Q _oss

Gate plateau voltage

Output charge

V

_DD=50 V, V _GS=0 V

60

nC

Reverse Diode

I _S

Diode continous forward current

Diode pulse current

-

63

A

T _C=25 °C

I _S,pulse

252

V

_GS=0 V, I _F=50 A,

V _SD

Diode forward voltage

-

0.9

1.2

V

T _j=25 °C

t _rr

Reverse recovery time

-

85

-

ns

V _R=50 V, I _F=25 A,

di _F/dt =100 A/µs

Q _rr

Reverse recovery charge

228

nC

⁴⁾See figure 16 for gate charge parameter definition

Rev. 2.09

page 3

2009-11-04

BSC159N10LSF G

1 Power dissipation

2 Drain current

P

_tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

120

100

80

60

40

20

0

60

40

20

0

40

80

120

160

0

40

80

120

160

T

_C[°C]

T

_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

_thJC=f(t _p)

Z

parameter: D =t _p/T

10³

10²

10¹

10⁰

10^-1

10¹

1 µs

10 µs

10⁰

100 µs

0.5

1 ms

0.2

0.1

10 ms

0.05

10^-1

DC

0.02

0.01

single pulse

10^-2

10^-1

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

V

_DS[V]

t

_p[s]

Rev. 2.09

page 4

2009-11-04

BSC159N10LSF G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

_DS(on)=f(I _D); T _j=25 °C

R

parameter: V _GS

200

30

7.5 V

3.5 V

10 V

25

4 V

160

4.5 V

6 V

20

15

10

5

120

6 V

7.5 V

80

10 V

4.5 V

40

4 V

3.5 V

3.2 V

0

1

2

3

4

5

20

40

60

80

100

V

_DS[V]

I

_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

160

120

80

100

80

60

40

20

0

40

150 °C

25 °C

0

2

4

6

0

20

40

60

80

100

V

_GS[V]

I_D[A]

Rev. 2.09

page 5

2009-11-04

BSC159N10LSF G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_GS(th)=f(T _j); V _GS=V _DS

R

_DS(on)=f(T _j); I _D=25 A; V _GS=10 V

V

parameter: I _D

30

25

3

2.5

2

20

720 µA

98%

72 µA

15

1.5

1

typ

10

5

0.5

0

-60

-20

20

60

100

140

180

-60

-20

20

60

T _j[°C]

100

140

180

T _j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

1000

Ciss

10³

10²

10¹

10⁰

Coss

100

10

150 °C, 98%

25 °C

150 °C

Crss

25 °C, 98%

1

0

20

40

60

80

0.5

1

1.5

2

V

_DS[V]

V

_SD[V]

Rev. 2.09

page 6

2009-11-04

BSC159N10LSF G

13 Avalanche characteristics

_AS=f(t _AV); R _GS=25 Ω

14 Typ. gate charge

_GS=f(Q _gate); I _D=25 A pulsed

V

I

parameter: T _j(start)

parameter: V _DD

100

10

8

6

4

2

25 °C

80 V

100 °C

50 V

125 °C

10

20 V

1

0

10

100

1000

10

20

30

t

_AV[µs]

Q

_gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V

_BR(DSS)=f(T _j); I _D=1 mA

110

V _GS

Q _g

105

100

95

V _gs(th)

Q _g(th)

Q _sw

Q _gd

Q _gate

Q _gs

90

-60

-20

20

60

100

140

180

T _j[°C]

Rev. 2.09

page 7

2009-11-04

BSC159N10LSF G

Package Outline: PG-TDSON-8

Rev. 2.09

page 8

2009-11-04

BSC159N10LSF G

Dimensions in mm

Rev. 2.09

page 9

2009-11-04

BSC159N10LSF G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.09

page 10

2009-11-04

型号:	BSC159N10LSFG
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Not Recommended
包装说明：	SMALL OUTLINE, R-PDSO-F5
针数：	8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.19
其他特性：	LOGIC LEVEL COMPATIBLE
雪崩能效等级（Eas）：	155 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V
最大漏极电流 (Abs) (ID)：	63 A
最大漏极电流 (ID)：	9.4 A
最大漏源导通电阻：	0.0159 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-F5
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	114 W
最大脉冲漏极电流 (IDM)：	252 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	FLAT
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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