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  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

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  • 深圳市华来深电子有限公司

     该会员已使用本站13年以上
  • CSD17301Q5A 现货库存
  • 数量2500 
  • 厂家TI 
  • 封装QFN8 
  • 批号20+ 
  • 受权代理!全新原装现货特价热卖!
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • CSD17301Q5A 现货库存
  • 数量2500 
  • 厂家TI 
  • 封装(DQJ) 
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  • 新到现货、一手货源、当天发货、bom配单
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  • 深圳市硅诺电子科技有限公司

     该会员已使用本站8年以上
  • CSD17301Q5A
  • 数量
  • 厂家TI 
  • 封装只做原装正品询价为主0755-83011961 
  • 批号 
  • 普通
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  • 深圳市和诚半导体有限公司

     该会员已使用本站11年以上
  • CSD17301Q5A
  • 数量5600 
  • 厂家TI 
  • 封装TDSON-8 
  • 批号23+ 
  • 100%深圳原装现货库存
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  • 现代芯城(深圳)科技有限公司

     该会员已使用本站15年以上
  • CSD17301Q5A
  • 数量64000 
  • 厂家一级代理 
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  • 一级代理正品采购
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  • 深圳市高捷芯城科技有限公司

     该会员已使用本站11年以上
  • CSD17301Q5A
  • 数量9555 
  • 厂家TI(德州仪器) 
  • 封装DFN-8(5x6) 
  • 批号23+ 
  • 支持大陆交货,美金交易。原装现货库存。
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • CSD17301Q5A
  • 数量3287 
  • 厂家TI/德州仪器 
  • 封装NA/ 
  • 批号23+ 
  • 原装现货,当天可交货,原型号开票
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  • 集好芯城

     该会员已使用本站13年以上
  • CSD17301Q5A
  • 数量20276 
  • 厂家VBSEMI 
  • 封装TDSON8 
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  • 深圳市能元时代电子有限公司

     该会员已使用本站10年以上
  • CSD17301Q5A
  • 数量50000 
  • 厂家TI 
  • 封装DFN56 
  • 批号24+ 
  • 公司原装现货可含税!假一罚十!
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  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • CSD17301Q5A
  • 数量30000 
  • 厂家专营TI 
  • 封装QFN8 
  • 批号23+ 
  • 代理全新原装现货,价格优势
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  • 深圳市卓越微芯电子有限公司

     该会员已使用本站12年以上
  • CSD17301Q5A
  • 数量5500 
  • 厂家TI 
  • 封装QFN8 
  • 批号20+ 
  • 百分百原装正品 真实公司现货库存 本公司只做原装 可开13%增值税发票,支持样品,欢迎来电咨询!
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  • 深圳市美思瑞电子科技有限公司

     该会员已使用本站12年以上
  • CSD17301Q5A
  • 数量12245 
  • 厂家TI/德州仪器 
  • 封装QFN8 
  • 批号22+ 
  • 现货,原厂原装假一罚十!
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  • 深圳市西源信息科技有限公司

     该会员已使用本站9年以上
  • CSD17301Q5A
  • 数量8800 
  • 厂家TI 
  • 封装TDSON-8 
  • 批号最新批号 
  • 原装现货零成本有接受价格就出
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  • 深圳市集创讯科技有限公司

     该会员已使用本站5年以上
  • CSD17301Q5A
  • 数量15500 
  • 厂家TI/德州仪器 
  • 封装VSONP-8 
  • 批号24+ 
  • 原装进口正品现货,假一罚十价格优势
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  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
  • CSD17301Q5A
  • 数量8800 
  • 厂家TI/德州仪器 
  • 封装QFN8 
  • 批号新年份 
  • 羿芯诚只做原装,原厂渠道,价格优势可谈!
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  • 0755-82570683 QQ:2853992132
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  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • CSD17301Q5A
  • 数量12500 
  • 厂家TI/德州仪器 
  • 封装VSONP-8 
  • 批号2023+ 
  • 绝对原装正品全新深圳进口现货,优质渠道供应商!
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  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • CSD17301Q5A
  • 数量65701 
  • 厂家TI 
  • 封装QFN8 
  • 批号2023+ 
  • 绝对原装全新正品现货/优势渠道商、原盘原包原盒
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  • 0755-83777708“进口原装正品专供” QQ:364510898QQ:515102657
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  • 深圳市晶美隆科技有限公司

     该会员已使用本站14年以上
  • CSD17301Q5A
  • 数量18310 
  • 厂家TI 
  • 封装SON-8 
  • 批号23+ 
  • 全新原装正品现货热卖
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  • 0755-82519391 QQ:2885348339QQ:2885348317
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  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • CSD17301Q5A
  • 数量83500 
  • 厂家TI-德州仪器 
  • 封装TSON-8 
  • 批号▉▉:2年内 
  • ▉▉¥10一一有问必回一一有长期订货一备货HK仓库
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  • 深圳市正信鑫科技有限公司

     该会员已使用本站12年以上
  • CSD17301Q5A
  • 数量7526 
  • 厂家TI 
  • 封装原厂封装 
  • 批号22+ 
  • 原装正品★真实库存★价格优势★欢迎来电洽谈
  • QQ:1686616797QQ:1686616797 复制
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  • 0755-22655674 QQ:1686616797QQ:2440138151
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  • 深圳市芯鹏泰科技有限公司

     该会员已使用本站8年以上
  • CSD17301Q5A
  • 数量7536 
  • 厂家Texas Instruments 
  • 封装8-VSONP(5x6) 
  • 批号23+ 
  • 晶体管MOSFET 原装现货
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  • 0755-82777852 QQ:892152356
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  • 深圳市华芯盛世科技有限公司

     该会员已使用本站13年以上
  • CSD17301Q5A
  • 数量865000 
  • 厂家TI/德州仪器 
  • 封装TDSON-8 
  • 批号最新批号 
  • 一级代理,原装特价现货!
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  • 0755-83225692 QQ:2881475757
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  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • CSD17301Q5A
  • 数量13050 
  • 厂家TI 
  • 封装QFN 
  • 批号2023+ 
  • 绝对原装正品现货/优势渠道商、原盘原包原盒
  • QQ:1002316308QQ:1002316308 复制
    QQ:515102657QQ:515102657 复制
  • 深圳分公司0755-83777708“进口原装正品专供” QQ:1002316308QQ:515102657
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  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • CSD17301Q5A
  • 数量9328 
  • 厂家TI-德州仪器 
  • 封装DFN-8.贴片 
  • 批号▉▉:2年内 
  • ▉▉¥13.4元一有问必回一有长期订货一备货HK仓库
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  • 深圳市一呈科技有限公司

     该会员已使用本站9年以上
  • CSD17301Q5A
  • 数量9739 
  • 厂家TI/德州仪器 
  • 封装QFN8 
  • 批号20+ 
  • ▉原装正品▉低价力挺实单全系列可订
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  • 深圳市三得电子有限公司

     该会员已使用本站15年以上
  • CSD17301Q5A
  • 数量50000 
  • 厂家TEXAS 
  • 封装SO-8 
  • 批号2024 
  • 深圳原装现货库存,欢迎咨询合作
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  • 深圳市英德州科技有限公司

     该会员已使用本站2年以上
  • CSD17301Q5A
  • 数量9800 
  • 厂家TI(德州仪器) 
  • 封装VSONP-8 
  • 批号1年内 
  • 原厂渠道 正品保障 长期供应
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  • 深圳市创德丰电子有限公司

     该会员已使用本站15年以上
  • CSD17301Q5A
  • 数量
  • 厂家TI/BB 
  • 封装QFN8 
  • 批号10+ 
  • 一定原装房间现货
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  • 86-755-83226910, QQ:2851807192QQ:2851807191
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  • 深圳市惠诺德电子有限公司

     该会员已使用本站7年以上
  • CSD17301Q5A
  • 数量29500 
  • 厂家Texas Instruments 
  • 封装MOSFET N-CH 30V 28A/100A 8VSON 
  • 批号21+ 
  • 只做原装现货代理
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  • 深圳市和谐世家电子有限公司

     该会员已使用本站13年以上
  • CSD17301Q5A
  • 数量9693 
  • 厂家Texas Instruments 
  • 封装8-VSON(5x6) 
  • 批号最新批号 
  • 全新原装假一贴十!
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  • 昂富(深圳)电子科技有限公司

     该会员已使用本站4年以上
  • CSD17301Q5A
  • 数量34931 
  • 厂家TI/德州仪器 
  • 封装VSONP-8 
  • 批号23+ 
  • 一站式BOM配单,短缺料找现货,怕受骗,就找昂富电子.
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  • 北京杰创宏达电子有限公司

     该会员已使用本站12年以上
  • CSD17301Q5A
  • 数量2600 
  • 厂家Texas Instruments 
  • 封装原厂原装 
  • 批号2024+ 
  • 授权代理商
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  • 深圳市鹏睿康科技有限公司

     该会员已使用本站16年以上
  • CSD17301Q5A
  • 数量2500 
  • 厂家TI 
  • 封装只做原装 
  • 批号23+ 
  • 原装现货假一赔万,原包原标,支持实单
  • QQ:2885392746QQ:2885392746 复制
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  • 深圳市芯柏然科技有限公司

     该会员已使用本站7年以上
  • CSD17301Q5A
  • 数量23480 
  • 厂家TI 
  • 封装TDSON-8 
  • 批号21+ 
  • 新到现货、一手货源、当天发货、价格低于市场
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  • 深圳市楷兴电子科技有限公司

     该会员已使用本站7年以上
  • CSD17301Q5A
  • 数量10500 
  • 厂家TI/德州仪器 
  • 封装原厂原装 
  • 批号21+ 
  • 原装现货库存可出样品
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  • 深圳市亿智腾科技有限公司

     该会员已使用本站8年以上
  • CSD17301Q5A
  • 数量16680 
  • 厂家TI 
  • 封装QFN8 
  • 批号16+ 
  • 假一赔十★全新原装现货★★特价供应★工厂客户可放款
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  • 深圳市鹏和科技有限公司

     该会员已使用本站16年以上
  • CSD17301Q5A
  • 数量37312 
  • 厂家TI 
  • 封装VSONP 
  • 批号23+ 
  • 原装正品 代理渠道
  • QQ:604309946QQ:604309946 复制
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  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • CSD17301Q5A
  • 数量85000 
  • 厂家TI/德州仪器 
  • 封装VSONP-8 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
  • QQ:2881495753QQ:2881495753 复制
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  • 深圳市珩瑞科技有限公司

     该会员已使用本站2年以上
  • CSD17301Q5A
  • 数量
  • 厂家21+ 
  • 封装12000 
  • 批号 
  • ███全新原装正品,可配单
  • QQ:2938238007QQ:2938238007 复制
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  • 万三科技(深圳)有限公司

     该会员已使用本站2年以上
  • CSD17301Q5A
  • 数量660000 
  • 厂家Texas Instruments(德州仪器) 
  • 封装8-PowerTDFN 
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产品型号CSD17301Q5A的概述

CSD17301Q5A芯片概述 CSD17301Q5A是一款由德州仪器(Texas Instruments)推出的N沟道功率MOSFET,广泛应用于各种电力管理和转换电路中。该芯片特别适合用于高效率的DC-DC转换器、同步整流、电源管理系统和其他需要高开关频率和低导通电阻的应用场合。它的出色性能使得其在现代电力电子技术中占有重要地位。 芯片详细参数 CSD17301Q5A的主要参数包括: 1. 晶体管类型:N沟道 2. 最大漏极源极电压(VDS):30V 3. 最大连续漏极电流(ID):最大可达80A 4. 导通电阻(RDS(on)):典型值为4.5 mΩ(在VGS = 10V时) 5. 门极驱动电压(VGS):±20V 6. 输入电容(Ciss):约3500 pF 7. 反向恢复时间(trr):~30 ns 8. 热阻(RθJA):最大为50°C/W 此外,CSD17301Q5A还具...

产品型号CSD17301Q5A的Datasheet PDF文件预览

CSD17301Q5A  
www.ti.com  
SLPS215A JANUARY 2010REVISED FEBRUARY 2010  
30V, N-Channel NexFET™ Power MOSFETs  
Check for Samples: CSD17301Q5A  
1
FEATURES  
PRODUCT SUMMARY  
2
Optimized for 5V Gate Drive  
VDS  
Qg  
Drain to Source Voltage  
Gate Charge Total (4.5V)  
Gate Charge Gate to Drain  
30  
19  
V
Ultralow Qg and Qgd  
nC  
nC  
m  
mΩ  
mΩ  
V
Low Thermal Resistance  
Avalanche Rated  
Qgd  
4.3  
VGS = 3V  
2.9  
2.3  
2
RDS(on) Drain to Source On Resistance  
VGS = 4.5V  
VGS = 8V  
Pb Free Terminal Plating  
RoHS Compliant  
VGS(th)  
Threshold Voltage  
1.1  
Halogen Free  
SON 5-mm × 6-mm Plastic Package  
Text and br Added for Spacing  
ORDERING INFORMATION  
APPLICATIONS  
Device  
Package  
Media  
Qty  
Ship  
Notebook Point of Load  
Point-of-Load Synchronous Buck in  
SON 5-mm × 6-mm  
Plastic Package  
13-inch  
reel  
Tape and  
Reel  
CSD17301Q5A  
2500  
Networking, Telecom and Computing Systems  
Text and br Added for Spacing  
ABSOLUTE MAXIMUM RATINGS  
Optimized for Synchronous FET Applications  
TA = 25°C unless otherwise stated  
VALUE  
UNIT  
V
DESCRIPTION  
VDS  
VGS  
Drain to Source Voltage  
30  
The NexFET™ power MOSFET has been designed  
to minimize losses in power conversion applications,  
and optimized for 5V gate drive applications.  
Gate to Source Voltage  
+10 / –8  
100  
V
Continuous Drain Current, TC = 25°C  
Continuous Drain Current(1)  
Pulsed Drain Current, TA = 25°C(2)  
Power Dissipation(1)  
A
ID  
28  
A
IDM  
PD  
TJ,  
118  
A
Top View  
3.2  
W
Operating Junction and Storage  
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
–55 to 150  
414  
°C  
TSTG Temperature Range  
Avalanche Energy, single pulse  
ID = 91A, L = 0.1mH, RG = 25Ω  
EAS  
mJ  
(1) Typical RqJA = 39°C/W on 1in2 Cu (2 oz) on 0.060" thick FR4  
D
D
PCB.  
P0093-01  
(2) Pulse width 300ms, duty cycle 2%  
RDS(on) vs VGS  
GATE CHARGE  
10  
9
8
7
6
5
4
3
2
1
0
8
ID = 25A  
ID = 25A  
VDS = 15V  
7
6
5
4
3
2
1
0
TC = 125°C  
TC = 25°C  
0
1
2
3
4
5
6
7
8
9
10  
0
5
10  
15  
20  
25  
30  
VGS - Gate-to-Source Voltage - V  
Qg - Gate Charge - nC  
G006  
G003  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NexFET is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2010, Texas Instruments Incorporated  
 
CSD17301Q5A  
SLPS215A JANUARY 2010REVISED FEBRUARY 2010  
www.ti.com  
ELECTRICAL CHARACTERISTICS  
(TA = 25°C unless otherwise stated)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
Static Characteristics  
BVDSS  
IDSS  
Drain to Source Voltage  
VGS = 0V, ID = 250mA  
30  
V
mA  
nA  
V
Drain to Source Leakage Current  
Gate to Source Leakage Current  
Gate to Source Threshold Voltage  
VGS = 0V, VDS = 24V  
VDS = 0V, VGS = +10/-8V  
VDS = VGS, ID = 250mA  
VGS = 3V, ID = 25A  
1
100  
1.55  
3.7  
3
IGSS  
VGS(th)  
0.9  
1.1  
2.9  
2.3  
2
mΩ  
mΩ  
mΩ  
S
RDS(on)  
Drain to Source On Resistance  
Transconductance  
VGS = 4.5V, ID = 25A  
VGS = 8V, ID = 25A  
2.6  
gfs  
VDS = 15V, ID = 25A  
149  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
RG  
Input Capacitance  
2660  
1420  
80  
3480  
1850  
105  
2.6  
pF  
pF  
pF  
VGS = 0V, VDS = 15V,  
f = 1MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Series Gate Resistance  
Gate Charge Total (4.5V)  
Gate Charge Gate to Drain  
Gate Charge Gate to Source  
Gate Charge at Vth  
Output Charge  
1.3  
Qg  
19  
25  
nC  
nC  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
Qgd  
Qgs  
Qg(th)  
Qoss  
td(on)  
tr  
4.3  
VDS = 15V,  
ID = 25A  
5.7  
2.9  
VDS = 14V, VGS = 0V  
35  
Turn On Delay Time  
Rise Time  
10.7  
16.2  
28  
VDS = 15V, VGS = 4.5V, ID = 25A  
RG = 2Ω  
td(off)  
tf  
Turn Off Delay Time  
Fall Time  
10.5  
Diode Characteristics  
VSD  
Qrr  
trr  
Diode Forward Voltage  
ISD = 25A, VGS = 0V  
0.8  
50  
33  
1
V
Reverse Recovery Charge  
Reverse Recovery Time  
nC  
ns  
VDD= 14V, IF = 25A,  
di/dt = 300A/ms  
THERMAL CHARACTERISTICS  
(TA = 25°C unless otherwise stated)  
PARAMETER  
Thermal Resistance Junction to Case(1)  
Thermal Resistance Junction to Ambient(1) (2)  
MIN  
TYP  
MAX  
UNIT  
°C/W  
°C/W  
R qJC  
R qJA  
2.2  
49  
(1)  
R
qJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in 0.060 inch thick FR4 board. R qJC is  
specified by design while R qJA is determined by the user’s board design.  
(2) Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu.  
2
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Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): CSD17301Q5A  
CSD17301Q5A  
www.ti.com  
SLPS215A JANUARY 2010REVISED FEBRUARY 2010  
GATE  
Source  
GATE  
Source  
Max RqJA = 120°C/W  
when mounted on  
minimum pad area of 2  
oz. Cu.  
Max RqJA = 49°C/W  
when mounted on  
1inch2 of 2 oz. Cu.  
DRAIN  
DRAIN  
M0137-02  
M0137-01  
TYPICAL MOSFET CHARACTERISTICS  
(TA = 25°C unless otherwise stated)  
10  
1
0.5  
0.3  
Duty Cycle = t1/t2  
0.1  
0.1  
0.05  
P
0.02  
0.01  
t1  
0.01  
t2  
Typical RqJA = 96°C/W (min Cu)  
TJ = P ´ ZqJA ´ RqJA  
Single Pulse  
0.001  
0.001  
0.01  
0.1  
1
10  
100  
1k  
tp - Pulse Duration - s  
G012  
Figure 1. Transient Thermal Impedance  
Copyright © 2010, Texas Instruments Incorporated  
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3
Product Folder Link(s): CSD17301Q5A  
CSD17301Q5A  
SLPS215A JANUARY 2010REVISED FEBRUARY 2010  
www.ti.com  
TYPICAL MOSFET CHARACTERISTICS (continued)  
(TA = 25°C unless otherwise stated)  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 5V  
VGS = 8V  
VGS = 4.5V  
VGS = 3V  
TC = 125°C  
TC = 25°C  
VGS = 2.5V  
TC = -55°C  
VGS = 2V  
0
0.2  
0.4  
0.6  
0.8  
1
0
0.5  
1
1.5  
2
2.5  
3
VDS - Drain-to-Source Voltage - V  
VGS - Gate-to-Source Voltage - V  
G001  
G002  
Figure 2. Saturation Characteristics  
TEXT ADDED FOR SPACING  
Figure 3. Transfer Characteristics  
TEXT ADDED FOR SPACING  
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
ID = 25A  
VDS = 15V  
f = 1MHz  
VGS = 0V  
Coss = Cds + Cgd  
Ciss = Cgd + Cgs  
Crss = Cgd  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
Qg - Gate Charge - nC  
VDS - Drain-to-Source Voltage - V  
G003  
G004  
Figure 4. Gate Charge  
Figure 5. Capacitance  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
1.4  
1.2  
1
10  
9
8
7
6
5
4
3
2
1
0
ID = 250µA  
ID = 25A  
0.8  
0.6  
0.4  
0.2  
0
TC = 125°C  
TC = 25°C  
-75  
-25  
25  
75  
125  
175  
0
1
2
3
4
5
6
7
8
9
10  
TC - Case Temperature - °C  
VGS - Gate-to-Source Voltage - V  
G005  
G006  
Figure 6. Threshold Voltage vs. Temperature  
Figure 7. On Resistance vs. Gate Voltage  
4
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Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): CSD17301Q5A  
CSD17301Q5A  
www.ti.com  
SLPS215A JANUARY 2010REVISED FEBRUARY 2010  
TYPICAL MOSFET CHARACTERISTICS (continued)  
(TA = 25°C unless otherwise stated)  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
1.8  
1.6  
1.4  
1.2  
1
100  
10  
ID = 25A  
VGS = 4.5V  
1
TC = 125°C  
0.1  
TC = 25°C  
0.8  
0.6  
0.4  
0.2  
0.01  
0.001  
0.0001  
-75  
-25  
25  
75  
125  
175  
0
0.2  
0.4  
0.6  
0.8  
1
TC - Case Temperature - °C  
VSD - Source-to-Drain Voltage - V  
G007  
G008  
Figure 8. On Resistance vs. Temperature  
TEXT ADDED FOR SPACING  
Figure 9. Typical Diode Forward Voltage  
TEXT ADDED FOR SPACING  
1k  
100  
10  
1k  
100  
10  
1ms  
TC = 25°C  
10ms  
110000m1s  
1s  
1
TC = 125°C  
Area Limited  
by RDS(on)  
0.1  
0.01  
Single Pulse  
Typical RθJA = 96°C/W (min Cu)  
DC  
1
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
VDS - Drain-to-Source Voltage - V  
t(AV) - Time in Avalanche - ms  
G009  
G010  
Figure 10. Maximum Safe Operating Area  
Figure 11. Single Pulse Unclamped Inductive Switching  
TEXT ADDED FOR SPACING  
120  
100  
80  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100 125 150 175  
TC - Case Temperature - °C  
G011  
Figure 12. Maximum Drain Current vs. Temperature  
Copyright © 2010, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Link(s): CSD17301Q5A  
 
CSD17301Q5A  
SLPS215A JANUARY 2010REVISED FEBRUARY 2010  
www.ti.com  
MECHANICAL DATA  
Q5A Package Dimensions  
E2  
L
H
K
q
L1  
Top View  
Side View  
Bottom View  
q
E1  
E
Front View  
M0135-01  
MILLIMETERS  
NOM  
DIM  
MIN  
0.90  
0.33  
0.20  
4.80  
3.61  
5.90  
5.70  
3.38  
MAX  
1.10  
0.51  
0.30  
5.00  
3.96  
6.10  
5.80  
3.78  
A
b
1.00  
0.41  
c
0.25  
D1  
D2  
E
4.90  
3.81  
6.00  
E1  
E2  
e
5.75  
3.58  
1.27 BSC  
0.51  
H
0.41  
1.10  
0.51  
0.06  
0°  
0.61  
K
L
0.61  
0.13  
0.71  
0.20  
12°  
L1  
q
6
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Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): CSD17301Q5A  
CSD17301Q5A  
www.ti.com  
SLPS215A JANUARY 2010REVISED FEBRUARY 2010  
MILLIMETERS  
INCHES  
DIM  
Recommended PCB Pattern  
MIN  
MAX  
6.305  
4.56  
4.56  
0.7  
MIN  
MAX  
0.248  
0.18  
F1  
F1  
F2  
6.205  
4.46  
4.46  
0.65  
0.62  
0.63  
0.7  
0.244  
0.176  
0.176  
0.026  
0.024  
0.025  
0.028  
0.026  
0.024  
0.193  
0.176  
F7  
F6  
F3  
0.18  
F4  
0.028  
0.026  
0.027  
0.031  
0.028  
0.026  
0.197  
0.18  
F5  
0.67  
0.68  
0.8  
F6  
F7  
F8  
0.65  
0.62  
4.9  
0.7  
F9  
0.67  
5
F10  
F11  
4.46  
4.56  
F10  
M0139-01  
For recommended circuit layout for PCB designs, see application note SLPA005 Reducing Ringing Through  
PCB Layout Techniques.  
Q5A Tape and Reel Information  
K0  
4.00 0.10 ꢀ(SS ꢁNoS 1ꢂ  
0.30 0.05  
2.00 0.05  
+0.10  
–0.00  
Ø 1.50  
B0  
A0  
8.00 0.10  
R 0.30 MAX  
Ø 1.50 MIꢁ  
R 0.30 TYP  
A0 = 6.50 0.10  
B0 = 5.30 0.10  
K0 = 1.40 0.10  
M0138-01  
Notes:  
1. 10-sprocket hole-pitch cumulative tolerance ±0.2  
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm  
3. Material: black static-dissipative polystyrene  
4. All dimensions are in mm (unless otherwise specified)  
5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket  
6. MSL1 260°C (IR and convection) PbF reflow compatible  
Copyright © 2010, Texas Instruments Incorporated  
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Product Folder Link(s): CSD17301Q5A  
CSD17301Q5A  
SLPS215A JANUARY 2010REVISED FEBRUARY 2010  
www.ti.com  
Package Marking Information  
Location  
1st Line  
8
5
5
8
CSD  
= Fixed Characters  
NNNNN = Product Code  
2nd Line (Date Code)  
CSDNNNNN  
YYWWC  
LLLLL  
YY  
WW  
C
= Last 2 digits of the Year  
= 2-digit Work Week  
= Country of Origin  
> Philippines = P  
> Taiwan = T  
> China = C  
3rd Line  
LLLLL  
= Last 5 digits of the Wafer Lot #  
1
4
4
1
Pin 1  
Identifier  
M0136-01  
REVISION HISTORY  
Changes from Original (January) to Revision A  
Page  
Changed the Abs Max Ratings table, Avalanche Energy, single pulse From: ID = 85A, L = 0.1mH, RG = 25Value =  
361 To: ID = 91A, L = 0.1mH, RG = 25Value = 414 .......................................................................................................... 1  
Changed Figure 11 ............................................................................................................................................................... 5  
8
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Product Folder Link(s): CSD17301Q5A  
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配单直通车
CSD17301Q5A产品参数
型号:CSD17301Q5A
Brand Name:Texas Instruments
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5
针数:8
Reach Compliance Code:not_compliant
ECCN代码:EAR99
HTS代码:8541.29.00.95
Factory Lead Time:1 week
风险等级:1.67
其他特性:AVALANCHE RATED
雪崩能效等级(Eas):414 mJ
外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):100 A
最大漏源导通电阻:0.0037 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):105 pF
JESD-30 代码:R-PDSO-F5
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:5
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.2 W
最大脉冲漏极电流 (IDM):118 A
认证状态:Not Qualified
子类别:FET General Purpose Power
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:FLAT
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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